Highly thermally stable Pd/Zn/Ag ohmic contact to Ga-face p-type GaN

Dae Hyun Kim, Weon Cheol Lim, Jae Seong Park, Tae Yeon Seong

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Pd/Zn/Ag ohmic contacts to Ga-face p-type GaN were investigated as a function of annealing temperature. The Pd/Zn/Ag ohmic contacts exhibited a reflectance of 85% at 450 nm, which is higher than that of Ag-only contacts (57%) after annealing at 500 C. The alleviated agglomeration of the Pd/Zn/Ag ohmic contact due to the formation of ZnO at the surface seems to be responsible for the higher reflectance. The specific contact resistances of Ag-only and Pd/Zn/Ag contacts annealed at 500 C were 2.4 × 10-4 and 6.1 × 10-5 Ω cm2, respectively. GaN-based light-emitting diodes (LEDs) fabricated with the Pd/Zn/Ag contacts exhibited ∼20% higher output power at 20 mA than the LEDs fabricated with the Ag-only contacts annealed at 500 C. On the basis of X-ray photoemission spectroscopy and SEM results, the improved electrical and thermal properties are described.

Original languageEnglish
Pages (from-to)327-331
Number of pages5
JournalJournal of Alloys and Compounds
Volume588
DOIs
Publication statusPublished - 2014 Mar 5

Fingerprint

Ohmic contacts
Light emitting diodes
Annealing
Contact resistance
Photoelectron spectroscopy
X ray spectroscopy
Electric properties
Thermodynamic properties
Agglomeration
Scanning electron microscopy
Temperature

Keywords

  • Electrode materials
  • Light absorption and reflection
  • Metals and alloys
  • Optical properties
  • Surfaces and interfaces

ASJC Scopus subject areas

  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Chemistry
  • Metals and Alloys

Cite this

Highly thermally stable Pd/Zn/Ag ohmic contact to Ga-face p-type GaN. / Kim, Dae Hyun; Lim, Weon Cheol; Park, Jae Seong; Seong, Tae Yeon.

In: Journal of Alloys and Compounds, Vol. 588, 05.03.2014, p. 327-331.

Research output: Contribution to journalArticle

Kim, Dae Hyun ; Lim, Weon Cheol ; Park, Jae Seong ; Seong, Tae Yeon. / Highly thermally stable Pd/Zn/Ag ohmic contact to Ga-face p-type GaN. In: Journal of Alloys and Compounds. 2014 ; Vol. 588. pp. 327-331.
@article{0a077157dde445d882d508ec920a3dad,
title = "Highly thermally stable Pd/Zn/Ag ohmic contact to Ga-face p-type GaN",
abstract = "Pd/Zn/Ag ohmic contacts to Ga-face p-type GaN were investigated as a function of annealing temperature. The Pd/Zn/Ag ohmic contacts exhibited a reflectance of 85{\%} at 450 nm, which is higher than that of Ag-only contacts (57{\%}) after annealing at 500 C. The alleviated agglomeration of the Pd/Zn/Ag ohmic contact due to the formation of ZnO at the surface seems to be responsible for the higher reflectance. The specific contact resistances of Ag-only and Pd/Zn/Ag contacts annealed at 500 C were 2.4 × 10-4 and 6.1 × 10-5 Ω cm2, respectively. GaN-based light-emitting diodes (LEDs) fabricated with the Pd/Zn/Ag contacts exhibited ∼20{\%} higher output power at 20 mA than the LEDs fabricated with the Ag-only contacts annealed at 500 C. On the basis of X-ray photoemission spectroscopy and SEM results, the improved electrical and thermal properties are described.",
keywords = "Electrode materials, Light absorption and reflection, Metals and alloys, Optical properties, Surfaces and interfaces",
author = "Kim, {Dae Hyun} and Lim, {Weon Cheol} and Park, {Jae Seong} and Seong, {Tae Yeon}",
year = "2014",
month = "3",
day = "5",
doi = "10.1016/j.jallcom.2013.11.044",
language = "English",
volume = "588",
pages = "327--331",
journal = "Journal of Alloys and Compounds",
issn = "0925-8388",
publisher = "Elsevier BV",

}

TY - JOUR

T1 - Highly thermally stable Pd/Zn/Ag ohmic contact to Ga-face p-type GaN

AU - Kim, Dae Hyun

AU - Lim, Weon Cheol

AU - Park, Jae Seong

AU - Seong, Tae Yeon

PY - 2014/3/5

Y1 - 2014/3/5

N2 - Pd/Zn/Ag ohmic contacts to Ga-face p-type GaN were investigated as a function of annealing temperature. The Pd/Zn/Ag ohmic contacts exhibited a reflectance of 85% at 450 nm, which is higher than that of Ag-only contacts (57%) after annealing at 500 C. The alleviated agglomeration of the Pd/Zn/Ag ohmic contact due to the formation of ZnO at the surface seems to be responsible for the higher reflectance. The specific contact resistances of Ag-only and Pd/Zn/Ag contacts annealed at 500 C were 2.4 × 10-4 and 6.1 × 10-5 Ω cm2, respectively. GaN-based light-emitting diodes (LEDs) fabricated with the Pd/Zn/Ag contacts exhibited ∼20% higher output power at 20 mA than the LEDs fabricated with the Ag-only contacts annealed at 500 C. On the basis of X-ray photoemission spectroscopy and SEM results, the improved electrical and thermal properties are described.

AB - Pd/Zn/Ag ohmic contacts to Ga-face p-type GaN were investigated as a function of annealing temperature. The Pd/Zn/Ag ohmic contacts exhibited a reflectance of 85% at 450 nm, which is higher than that of Ag-only contacts (57%) after annealing at 500 C. The alleviated agglomeration of the Pd/Zn/Ag ohmic contact due to the formation of ZnO at the surface seems to be responsible for the higher reflectance. The specific contact resistances of Ag-only and Pd/Zn/Ag contacts annealed at 500 C were 2.4 × 10-4 and 6.1 × 10-5 Ω cm2, respectively. GaN-based light-emitting diodes (LEDs) fabricated with the Pd/Zn/Ag contacts exhibited ∼20% higher output power at 20 mA than the LEDs fabricated with the Ag-only contacts annealed at 500 C. On the basis of X-ray photoemission spectroscopy and SEM results, the improved electrical and thermal properties are described.

KW - Electrode materials

KW - Light absorption and reflection

KW - Metals and alloys

KW - Optical properties

KW - Surfaces and interfaces

UR - http://www.scopus.com/inward/record.url?scp=84890095088&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84890095088&partnerID=8YFLogxK

U2 - 10.1016/j.jallcom.2013.11.044

DO - 10.1016/j.jallcom.2013.11.044

M3 - Article

VL - 588

SP - 327

EP - 331

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

SN - 0925-8388

ER -