Abstract
We investigated the effect of ZnO layer thickness on the optical and electrical properties of ZnO/Ag/ZnO multilayer films deposited on glass substrates. The transmission window became wider and shifted toward the lower energy side with increasing ZnO thickness. The ZnO/Ag/ZnO (40 nm/18.8 nm/40 nm) multilayer sample showed transmittance of ~96% at 550nm. As the ZnO thickness was increased from 8 nm to 80 nm, the carrier concentration gradually decreased from 1.74 × 10<sup>22</sup> cm<sup>−3</sup> to 4.33 × 10<sup>21</sup> cm<sup>−3</sup>, while the charge mobility varied from 23.8 cm<sup>2</sup>/V-s to 24.8 cm<sup>2</sup>/V-s. With increasing ZnO thickness, the samples exhibited similar sheet resistances of 3.6 Ω/sq to 3.9 Ω/sq, but the resistivity increased by a factor of 4.58. The samples showed smooth surfaces with root-mean-square roughness in the range of 0.47 nm to 0.94 nm. Haacke’s figure of merit (FOM) was calculated for all the samples; the ZnO (40 nm)/Ag (18.8 nm)/ZnO (40 nm) multilayer produced the highest FOM of 148.9 × 10<sup>−3</sup> Ω<sup>−1</sup>.
| Original language | English |
|---|---|
| Pages (from-to) | 3967-3972 |
| Number of pages | 6 |
| Journal | Journal of Electronic Materials |
| Volume | 44 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2015 May 27 |
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Keywords
- Ag
- multilayer
- transparent conducting electrode
- ZnO
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
Cite this
Highly Transparent and Low-Resistance Indium-Free ZnO/Ag/ZnO Multilayer Electrodes for Organic Photovoltaic Devices. / Kim, Jun Ho; Na, Jin Young; Kim, Sun Kyung; Yoo, Young Zo; Seong, Tae Yeon.
In: Journal of Electronic Materials, Vol. 44, No. 10, 27.05.2015, p. 3967-3972.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Highly Transparent and Low-Resistance Indium-Free ZnO/Ag/ZnO Multilayer Electrodes for Organic Photovoltaic Devices
AU - Kim, Jun Ho
AU - Na, Jin Young
AU - Kim, Sun Kyung
AU - Yoo, Young Zo
AU - Seong, Tae Yeon
PY - 2015/5/27
Y1 - 2015/5/27
N2 - We investigated the effect of ZnO layer thickness on the optical and electrical properties of ZnO/Ag/ZnO multilayer films deposited on glass substrates. The transmission window became wider and shifted toward the lower energy side with increasing ZnO thickness. The ZnO/Ag/ZnO (40 nm/18.8 nm/40 nm) multilayer sample showed transmittance of ~96% at 550nm. As the ZnO thickness was increased from 8 nm to 80 nm, the carrier concentration gradually decreased from 1.74 × 1022 cm−3 to 4.33 × 1021 cm−3, while the charge mobility varied from 23.8 cm2/V-s to 24.8 cm2/V-s. With increasing ZnO thickness, the samples exhibited similar sheet resistances of 3.6 Ω/sq to 3.9 Ω/sq, but the resistivity increased by a factor of 4.58. The samples showed smooth surfaces with root-mean-square roughness in the range of 0.47 nm to 0.94 nm. Haacke’s figure of merit (FOM) was calculated for all the samples; the ZnO (40 nm)/Ag (18.8 nm)/ZnO (40 nm) multilayer produced the highest FOM of 148.9 × 10−3 Ω−1.
AB - We investigated the effect of ZnO layer thickness on the optical and electrical properties of ZnO/Ag/ZnO multilayer films deposited on glass substrates. The transmission window became wider and shifted toward the lower energy side with increasing ZnO thickness. The ZnO/Ag/ZnO (40 nm/18.8 nm/40 nm) multilayer sample showed transmittance of ~96% at 550nm. As the ZnO thickness was increased from 8 nm to 80 nm, the carrier concentration gradually decreased from 1.74 × 1022 cm−3 to 4.33 × 1021 cm−3, while the charge mobility varied from 23.8 cm2/V-s to 24.8 cm2/V-s. With increasing ZnO thickness, the samples exhibited similar sheet resistances of 3.6 Ω/sq to 3.9 Ω/sq, but the resistivity increased by a factor of 4.58. The samples showed smooth surfaces with root-mean-square roughness in the range of 0.47 nm to 0.94 nm. Haacke’s figure of merit (FOM) was calculated for all the samples; the ZnO (40 nm)/Ag (18.8 nm)/ZnO (40 nm) multilayer produced the highest FOM of 148.9 × 10−3 Ω−1.
KW - Ag
KW - multilayer
KW - transparent conducting electrode
KW - ZnO
UR - http://www.scopus.com/inward/record.url?scp=84940792898&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84940792898&partnerID=8YFLogxK
U2 - 10.1007/s11664-015-3811-8
DO - 10.1007/s11664-015-3811-8
M3 - Article
AN - SCOPUS:84940792898
VL - 44
SP - 3967
EP - 3972
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 10
ER -