Highly transparent and low-resistant ZnNi/indium tin oxide Ohmic contact on p-type GaN

S. W. Chae, K. C. Kim, D. H. Kim, T. G. Kim, S. K. Yoon, B. W. Oh, D. S. Kim, H. K. Kim, Y. M. Sung

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Abstract

The authors report the improvement of GaN light-emitting diodes (LEDs) by applying a ZnNi/indium tin oxide (ITO) (5 nm380 nm) electrode with high transparency and low resistance to p-GaN. The Pt/ITO (5 nm380 nm), NiAuITO (2.5 nm5nm380 nm), and NiAu (2.5 nm5 nm) electrodes were prepared and annealed at 400, 500, and 600 °C for 1 min in air. The ZnNi/ITO contacts showed the lowest specific contact resistance of ∼1.27× 10-4 cm2 and the highest transmittance of ∼90% at 460 nm. LEDs fabricated with ZnNi/ITO p electrodes showed the best performance with a forward voltage of 3.28 V and a typical brightness of 11. 7 mcd at 20 mA.

Original languageEnglish
Article number181101
JournalApplied Physics Letters
Volume90
Issue number18
DOIs
Publication statusPublished - 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Chae, S. W., Kim, K. C., Kim, D. H., Kim, T. G., Yoon, S. K., Oh, B. W., Kim, D. S., Kim, H. K., & Sung, Y. M. (2007). Highly transparent and low-resistant ZnNi/indium tin oxide Ohmic contact on p-type GaN. Applied Physics Letters, 90(18), [181101]. https://doi.org/10.1063/1.2731672