The authors report the improvement of GaN light-emitting diodes (LEDs) by applying a ZnNi/indium tin oxide (ITO) (5 nm380 nm) electrode with high transparency and low resistance to p-GaN. The Pt/ITO (5 nm380 nm), NiAuITO (2.5 nm5nm380 nm), and NiAu (2.5 nm5 nm) electrodes were prepared and annealed at 400, 500, and 600 °C for 1 min in air. The ZnNi/ITO contacts showed the lowest specific contact resistance of ∼1.27× 10-4 cm2 and the highest transmittance of ∼90% at 460 nm. LEDs fabricated with ZnNi/ITO p electrodes showed the best performance with a forward voltage of 3.28 V and a typical brightness of 11. 7 mcd at 20 mA.
|Journal||Applied Physics Letters|
|Publication status||Published - 2007|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)