Highly transparent conductive Ag/Ga2O3 electrode for near-ultraviolet light-emitting diodes

Kie Young Woo, Jae Hoon Lee, Kyeong Heon Kim, Su Jin Kim, Tae Geun Kim

Research output: Contribution to journalArticle

11 Citations (Scopus)


We fabricated an Ag/Ga2O3 bilayer as a highly transparent conductive electrode for near-ultraviolet (NUV) light-emitting diodes (LEDs). The bilayer showed nonohmic characteristics because the as-deposited Ga2O3 film is an insulator. However, the bilayer thermally annealed in ambient air and N2 at 550°C for 1 min showed ohmic-like current-voltage characteristics including specific contact resistances of 3.06 × 10-2 and 7.34 × 10-2 Ω cm2, respectively. The optical transmittance and sheet resistance of the bilayer were about 91% and <42 Ω/□ at 380 nm. The results suggest that the Ag/Ga2O3 bilayer is suitable for application as a p-type electrode in NUV-LEDs.

Original languageEnglish
Pages (from-to)1760-1763
Number of pages4
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number8
Publication statusPublished - 2014 Jan 1

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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