Highly uniform resistive switching in SiN nanorod devices fabricated by nanosphere lithography

Hee Woong Shin; Ju Hyun Park; Ho Young Chung; Kyeong Heon Kim; Hee Dong Kim; Tae Geun Kim

doi:10.7567/APEX.7.024202

Highly uniform resistive switching in SiN nanorod devices fabricated by nanosphere lithography

Hee Woong Shin, Ju Hyun Park, Ho Young Chung, Kyeong Heon Kim, Hee Dong Kim, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

We demonstrate highly uniform resistive-switching (RS) characteristics of an SiN nanorod (NR) device fabricated by nanosphere lithography. In the RS experiments, variations in set and reset voltages for the SiN NR device are dramatically reduced to 0.2V from 0.45 V in conventional SiN thin films. In addition, the resistance ratio (10³) between set and reset states is larger and stably maintained without any degradation. As a result, in the resistive random access memory (RRAM) cells with a filament-based RS mechanism, the RS behavior of NR-based RS materials is more uniform than that of the conventional films as a result of reducing the number of conducting paths in the SiN layer.

Original language	English
Article number	024202
Journal	Applied Physics Express
Volume	7
Issue number	2
DOIs	https://doi.org/10.7567/APEX.7.024202
Publication status	Published - 2014 Feb

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Highly uniform resistive switching in SiN nanorod devices fabricated by nanosphere lithography",

abstract = "We demonstrate highly uniform resistive-switching (RS) characteristics of an SiN nanorod (NR) device fabricated by nanosphere lithography. In the RS experiments, variations in set and reset voltages for the SiN NR device are dramatically reduced to 0.2V from 0.45 V in conventional SiN thin films. In addition, the resistance ratio (103) between set and reset states is larger and stably maintained without any degradation. As a result, in the resistive random access memory (RRAM) cells with a filament-based RS mechanism, the RS behavior of NR-based RS materials is more uniform than that of the conventional films as a result of reducing the number of conducting paths in the SiN layer.",

author = "Shin, {Hee Woong} and Park, {Ju Hyun} and Chung, {Ho Young} and Kim, {Kyeong Heon} and Kim, {Hee Dong} and Kim, {Tae Geun}",

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doi = "10.7567/APEX.7.024202",

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T1 - Highly uniform resistive switching in SiN nanorod devices fabricated by nanosphere lithography

AU - Shin, Hee Woong

AU - Park, Ju Hyun

AU - Chung, Ho Young

AU - Kim, Kyeong Heon

AU - Kim, Hee Dong

AU - Kim, Tae Geun

PY - 2014/2

Y1 - 2014/2

N2 - We demonstrate highly uniform resistive-switching (RS) characteristics of an SiN nanorod (NR) device fabricated by nanosphere lithography. In the RS experiments, variations in set and reset voltages for the SiN NR device are dramatically reduced to 0.2V from 0.45 V in conventional SiN thin films. In addition, the resistance ratio (103) between set and reset states is larger and stably maintained without any degradation. As a result, in the resistive random access memory (RRAM) cells with a filament-based RS mechanism, the RS behavior of NR-based RS materials is more uniform than that of the conventional films as a result of reducing the number of conducting paths in the SiN layer.

AB - We demonstrate highly uniform resistive-switching (RS) characteristics of an SiN nanorod (NR) device fabricated by nanosphere lithography. In the RS experiments, variations in set and reset voltages for the SiN NR device are dramatically reduced to 0.2V from 0.45 V in conventional SiN thin films. In addition, the resistance ratio (103) between set and reset states is larger and stably maintained without any degradation. As a result, in the resistive random access memory (RRAM) cells with a filament-based RS mechanism, the RS behavior of NR-based RS materials is more uniform than that of the conventional films as a result of reducing the number of conducting paths in the SiN layer.

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Highly uniform resistive switching in SiN nanorod devices fabricated by nanosphere lithography

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