Highly uniform resistive switching in SiN nanorod devices fabricated by nanosphere lithography

Hee Woong Shin, Ju Hyun Park, Ho Young Chung, Kyeong Heon Kim, Hee Dong Kim, Tae Geun Kim

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We demonstrate highly uniform resistive-switching (RS) characteristics of an SiN nanorod (NR) device fabricated by nanosphere lithography. In the RS experiments, variations in set and reset voltages for the SiN NR device are dramatically reduced to 0.2V from 0.45 V in conventional SiN thin films. In addition, the resistance ratio (103) between set and reset states is larger and stably maintained without any degradation. As a result, in the resistive random access memory (RRAM) cells with a filament-based RS mechanism, the RS behavior of NR-based RS materials is more uniform than that of the conventional films as a result of reducing the number of conducting paths in the SiN layer.

Original languageEnglish
Article number024202
JournalApplied Physics Express
Volume7
Issue number2
DOIs
Publication statusPublished - 2014 Feb 1

Fingerprint

Nanospheres
Nanorods
Lithography
nanorods
lithography
random access memory
filaments
degradation
Data storage equipment
conduction
Degradation
Thin films
Electric potential
electric potential
thin films
cells
Experiments

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Highly uniform resistive switching in SiN nanorod devices fabricated by nanosphere lithography. / Shin, Hee Woong; Park, Ju Hyun; Chung, Ho Young; Kim, Kyeong Heon; Kim, Hee Dong; Kim, Tae Geun.

In: Applied Physics Express, Vol. 7, No. 2, 024202, 01.02.2014.

Research output: Contribution to journalArticle

Shin, Hee Woong ; Park, Ju Hyun ; Chung, Ho Young ; Kim, Kyeong Heon ; Kim, Hee Dong ; Kim, Tae Geun. / Highly uniform resistive switching in SiN nanorod devices fabricated by nanosphere lithography. In: Applied Physics Express. 2014 ; Vol. 7, No. 2.
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