Holes at GaAs-AlxGa1-xAs heterojunctions in magnetic fields

Sung Ryul Yang, D. A. Broido, L. J. Sham

Research output: Contribution to journalArticle

60 Citations (Scopus)

Abstract

The effects of anisotropy of the valence-band structure and of the mixing of the heavy and light holes on the Landau levels of the hole inversion layer in a normal magnetic field are studied. Some of the crossings of the Landau levels which occur when anisotropy is neglected are removed when it is included. While the measured multiple cyclotron-resonance frequencies are explained qualitatively by our calculation, there is quantitative disagreement.

Original languageEnglish
Pages (from-to)6630-6633
Number of pages4
JournalPhysical Review B
Volume32
Issue number10
DOIs
Publication statusPublished - 1985 Dec 1
Externally publishedYes

Fingerprint

Heterojunctions
heterojunctions
Anisotropy
Magnetic fields
Inversion layers
Cyclotron resonance
anisotropy
cyclotron resonance
Valence bands
magnetic fields
Band structure
inversions
valence
gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Holes at GaAs-AlxGa1-xAs heterojunctions in magnetic fields. / Yang, Sung Ryul; Broido, D. A.; Sham, L. J.

In: Physical Review B, Vol. 32, No. 10, 01.12.1985, p. 6630-6633.

Research output: Contribution to journalArticle

Yang, Sung Ryul ; Broido, D. A. ; Sham, L. J. / Holes at GaAs-AlxGa1-xAs heterojunctions in magnetic fields. In: Physical Review B. 1985 ; Vol. 32, No. 10. pp. 6630-6633.
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