H2 high pressure annealed Y-doped ZrO2gate dielectric with an EOT of 0.57 nm for Ge MOSFETs

Tae In Lee, Manh Cuong Nguyen, Hyun Jun Ahn, Min Ju Kim, Eui Joong Shin, Wan Sik Hwang, Hyun Young Yu, Rino Choi, Byung Jin Cho

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We report on the impact of H2 high pressure annealing (H2-HPA) on a Y-doped ZrO2 (Y-ZrO2)/GeOx/Ge gate stack. In this paper, compared to conventional forming gas annealing (FGA), the H2-HPA increased the k-value of the Y-doped ZrO2 gate dielectric to as high as 47.8 by enhancing the crystallization of the Y-ZrO2. This process can achieve an aggressively scaled equivalent oxide thickness (EOT) of 0.57 nm with an extremely low gate leakage current (Jg) of 4.5 × 10-6 A/cm2. In addition, the H2-HPA effectively passivated the dangling bonds and reduced the interfacetrap density (Dit) to as low as 3.4 × 1011 eV-1cm-2. The Ge pMOSFETs of the Y-ZrO2 with H2-HPA led to a ∼ 70% improvement in the effective hole mobility compared to the counterpart device with the conventional FGA. The device with H2-HPA also showed an improved subthreshold swing (SS) value of 93 mV/dec compared to that with the FGA(135 mV/dec).

Original languageEnglish
Pages (from-to)1350-1353
Number of pages4
JournalIEEE Electron Device Letters
Volume40
Issue number9
DOIs
Publication statusPublished - 2019 Sep

Keywords

  • Equivalent oxide thickness (EOT)
  • Gate leakage current
  • Germanium
  • Interface properties
  • MOSFET
  • Mobility

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Lee, T. I., Nguyen, M. C., Ahn, H. J., Kim, M. J., Shin, E. J., Hwang, W. S., Yu, H. Y., Choi, R., & Cho, B. J. (2019). H2 high pressure annealed Y-doped ZrO2gate dielectric with an EOT of 0.57 nm for Ge MOSFETs. IEEE Electron Device Letters, 40(9), 1350-1353. https://doi.org/10.1109/LED.2019.2928026