H2 high pressure annealed Y-doped ZrO2gate dielectric with an EOT of 0.57 nm for Ge MOSFETs

Tae In Lee; Manh Cuong Nguyen; Hyun Jun Ahn; Min Ju Kim; Eui Joong Shin; Wan Sik Hwang; Hyun Young Yu; Rino Choi; Byung Jin Cho

doi:10.1109/LED.2019.2928026

H₂ high pressure annealed Y-doped ZrO₂gate dielectric with an EOT of 0.57 nm for Ge MOSFETs

Tae In Lee, Manh Cuong Nguyen, Hyun Jun Ahn, Min Ju Kim, Eui Joong Shin, Wan Sik Hwang, Hyun Young Yu, Rino Choi, Byung Jin Cho

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We report on the impact of H₂ high pressure annealing (H₂-HPA) on a Y-doped ZrO₂ (Y-ZrO₂)/GeO_x/Ge gate stack. In this paper, compared to conventional forming gas annealing (FGA), the H₂-HPA increased the k-value of the Y-doped ZrO₂ gate dielectric to as high as 47.8 by enhancing the crystallization of the Y-ZrO₂. This process can achieve an aggressively scaled equivalent oxide thickness (EOT) of 0.57 nm with an extremely low gate leakage current (J_g) of 4.5 × 10^-6 A/cm². In addition, the H₂-HPA effectively passivated the dangling bonds and reduced the interfacetrap density (D_it) to as low as 3.4 × 10¹¹ eV^-1cm^-2. The Ge pMOSFETs of the Y-ZrO₂ with H₂-HPA led to a ∼ 70% improvement in the effective hole mobility compared to the counterpart device with the conventional FGA. The device with H₂-HPA also showed an improved subthreshold swing (SS) value of 93 mV/dec compared to that with the FGA(135 mV/dec).

Original language	English
Pages (from-to)	1350-1353
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	40
Issue number	9
DOIs	https://doi.org/10.1109/LED.2019.2928026
Publication status	Published - 2019 Sep

Keywords

Equivalent oxide thickness (EOT)
Gate leakage current
Germanium
Interface properties
MOSFET
Mobility

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2019.2928026

Cite this

H₂ high pressure annealed Y-doped ZrO₂gate dielectric with an EOT of 0.57 nm for Ge MOSFETs. / Lee, Tae In; Nguyen, Manh Cuong; Ahn, Hyun Jun; Kim, Min Ju; Shin, Eui Joong; Hwang, Wan Sik; Yu, Hyun Young; Choi, Rino; Cho, Byung Jin.

In: IEEE Electron Device Letters, Vol. 40, No. 9, 09.2019, p. 1350-1353.

Research output: Contribution to journal › Article › peer-review

@article{d2fc3c1811f94ab9aa3df2838b49bca5,

title = "H2 high pressure annealed Y-doped ZrO2gate dielectric with an EOT of 0.57 nm for Ge MOSFETs",

abstract = "We report on the impact of H2 high pressure annealing (H2-HPA) on a Y-doped ZrO2 (Y-ZrO2)/GeOx/Ge gate stack. In this paper, compared to conventional forming gas annealing (FGA), the H2-HPA increased the k-value of the Y-doped ZrO2 gate dielectric to as high as 47.8 by enhancing the crystallization of the Y-ZrO2. This process can achieve an aggressively scaled equivalent oxide thickness (EOT) of 0.57 nm with an extremely low gate leakage current (Jg) of 4.5 × 10-6 A/cm2. In addition, the H2-HPA effectively passivated the dangling bonds and reduced the interfacetrap density (Dit) to as low as 3.4 × 1011 eV-1cm-2. The Ge pMOSFETs of the Y-ZrO2 with H2-HPA led to a ∼ 70% improvement in the effective hole mobility compared to the counterpart device with the conventional FGA. The device with H2-HPA also showed an improved subthreshold swing (SS) value of 93 mV/dec compared to that with the FGA(135 mV/dec).",

keywords = "Equivalent oxide thickness (EOT), Gate leakage current, Germanium, Interface properties, MOSFET, Mobility",

author = "Lee, {Tae In} and Nguyen, {Manh Cuong} and Ahn, {Hyun Jun} and Kim, {Min Ju} and Shin, {Eui Joong} and Hwang, {Wan Sik} and Yu, {Hyun Young} and Rino Choi and Cho, {Byung Jin}",

note = "Funding Information: Manuscript received April 7, 2019; revised July 1, 2019; accepted July 6, 2019. Date of publication July 11, 2019; date of current version August 23, 2019. This work was supported by the Industrial Strategic Technology Development Program (Technology Development of Ge nMOS/pMOS FinFET for 10nm Technology Node) funded by the Ministry of Trade, Industry and Energy (MI, South Korea), under Grant 10048594. The review of this letter was arranged by Editor S. Hall. (Corresponding author: Byung Jin Cho.) T. I. Lee, H. J. Ahn, M. J. Kim, E. J. Shin, and B. J. Cho are with the School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, South Korea (e-mail: bjcho@kaist.edu). Publisher Copyright: {\textcopyright} 2019 IEEE.",

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T1 - H2 high pressure annealed Y-doped ZrO2gate dielectric with an EOT of 0.57 nm for Ge MOSFETs

AU - Lee, Tae In

AU - Nguyen, Manh Cuong

AU - Ahn, Hyun Jun

AU - Kim, Min Ju

AU - Shin, Eui Joong

AU - Hwang, Wan Sik

AU - Yu, Hyun Young

AU - Choi, Rino

AU - Cho, Byung Jin

N1 - Funding Information: Manuscript received April 7, 2019; revised July 1, 2019; accepted July 6, 2019. Date of publication July 11, 2019; date of current version August 23, 2019. This work was supported by the Industrial Strategic Technology Development Program (Technology Development of Ge nMOS/pMOS FinFET for 10nm Technology Node) funded by the Ministry of Trade, Industry and Energy (MI, South Korea), under Grant 10048594. The review of this letter was arranged by Editor S. Hall. (Corresponding author: Byung Jin Cho.) T. I. Lee, H. J. Ahn, M. J. Kim, E. J. Shin, and B. J. Cho are with the School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, South Korea (e-mail: bjcho@kaist.edu). Publisher Copyright: © 2019 IEEE.

PY - 2019/9

Y1 - 2019/9

N2 - We report on the impact of H2 high pressure annealing (H2-HPA) on a Y-doped ZrO2 (Y-ZrO2)/GeOx/Ge gate stack. In this paper, compared to conventional forming gas annealing (FGA), the H2-HPA increased the k-value of the Y-doped ZrO2 gate dielectric to as high as 47.8 by enhancing the crystallization of the Y-ZrO2. This process can achieve an aggressively scaled equivalent oxide thickness (EOT) of 0.57 nm with an extremely low gate leakage current (Jg) of 4.5 × 10-6 A/cm2. In addition, the H2-HPA effectively passivated the dangling bonds and reduced the interfacetrap density (Dit) to as low as 3.4 × 1011 eV-1cm-2. The Ge pMOSFETs of the Y-ZrO2 with H2-HPA led to a ∼ 70% improvement in the effective hole mobility compared to the counterpart device with the conventional FGA. The device with H2-HPA also showed an improved subthreshold swing (SS) value of 93 mV/dec compared to that with the FGA(135 mV/dec).

AB - We report on the impact of H2 high pressure annealing (H2-HPA) on a Y-doped ZrO2 (Y-ZrO2)/GeOx/Ge gate stack. In this paper, compared to conventional forming gas annealing (FGA), the H2-HPA increased the k-value of the Y-doped ZrO2 gate dielectric to as high as 47.8 by enhancing the crystallization of the Y-ZrO2. This process can achieve an aggressively scaled equivalent oxide thickness (EOT) of 0.57 nm with an extremely low gate leakage current (Jg) of 4.5 × 10-6 A/cm2. In addition, the H2-HPA effectively passivated the dangling bonds and reduced the interfacetrap density (Dit) to as low as 3.4 × 1011 eV-1cm-2. The Ge pMOSFETs of the Y-ZrO2 with H2-HPA led to a ∼ 70% improvement in the effective hole mobility compared to the counterpart device with the conventional FGA. The device with H2-HPA also showed an improved subthreshold swing (SS) value of 93 mV/dec compared to that with the FGA(135 mV/dec).

KW - Equivalent oxide thickness (EOT)

KW - Gate leakage current

KW - Germanium

KW - Interface properties

KW - MOSFET

KW - Mobility

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