Hybrid Characteristics of MoS2 Monolayer with Organic Semiconducting Tetracene and Application to Anti-Ambipolar Field Effect Transistor

Hyeon Jung Park, Cheol Joon Park, Jun Young Kim, Min Su Kim, Jeongyong Kim, Jinsoo Joo

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

An n-type MoS2 monolayer grown by chemical vapor deposition method was partially hybridized with an organic semiconducting p-type tetracene thin film. The photoluminescence (PL) intensity in the hybrid region of the MoS2/tetracene is clearly lower than that of pristine tetracene because of the charge-transfer effect, which was confirmed by the decrease in exciton lifetimes. Decrease in the temperature led to blue-shift in the PL peak position of MoS2 layers and, consequently, the PL intensities of both tetracene and MoS2 considerably increased owing to the decrease in phonon interaction. The PL spectra of bound excitons in the hybrid region were clearly observed at low temperatures, indicating the formation of trap states. The lateral-type n-p heterojunction field-effect transistors (FETs) using the MoS2/tetracene hybrid as an active layer showed gate-tunable rectification I-V and anti-ambipolar field-effect characteristics with hysteresis effect. The charge transport characteristics across the n-p heterojunction of the hybrid region of the FET can be explained in terms of the Shockley-Read-Hall trap-intermediated tunneling and Langevin recombination mechanisms. To improve the performance of MoS2/tetracene-based FET, a dielectric hexagonal boron nitride (h-BN) thin layer was inserted between the SiO2 surface and the active MoS2 layer. We observed the decrease in the hysteresis effect and threshold voltage of the h-BN/MoS2/tetracene-based FETs due to the decrease in the number of traps at the interface. The performance of h-BN/MoS2/tetracene FET device was also enhanced after the annealing process.

Original languageEnglish
Pages (from-to)32556-32566
Number of pages11
JournalACS Applied Materials and Interfaces
Volume10
Issue number38
DOIs
Publication statusPublished - 2018 Sep 26

Fingerprint

Field effect transistors
Monolayers
Boron nitride
Photoluminescence
Excitons
Hysteresis
Heterojunctions
Charge transfer
Threshold voltage
Chemical vapor deposition
naphthacene
Annealing
Thin films
Temperature
boron nitride

Keywords

  • anti-ambipolar
  • mobility
  • MoS
  • photoluminescence
  • tetracene
  • transistor

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Hybrid Characteristics of MoS2 Monolayer with Organic Semiconducting Tetracene and Application to Anti-Ambipolar Field Effect Transistor. / Park, Hyeon Jung; Park, Cheol Joon; Kim, Jun Young; Kim, Min Su; Kim, Jeongyong; Joo, Jinsoo.

In: ACS Applied Materials and Interfaces, Vol. 10, No. 38, 26.09.2018, p. 32556-32566.

Research output: Contribution to journalArticle

Park, Hyeon Jung ; Park, Cheol Joon ; Kim, Jun Young ; Kim, Min Su ; Kim, Jeongyong ; Joo, Jinsoo. / Hybrid Characteristics of MoS2 Monolayer with Organic Semiconducting Tetracene and Application to Anti-Ambipolar Field Effect Transistor. In: ACS Applied Materials and Interfaces. 2018 ; Vol. 10, No. 38. pp. 32556-32566.
@article{1e2e5147f8c34847926028b018ce66b6,
title = "Hybrid Characteristics of MoS2 Monolayer with Organic Semiconducting Tetracene and Application to Anti-Ambipolar Field Effect Transistor",
abstract = "An n-type MoS2 monolayer grown by chemical vapor deposition method was partially hybridized with an organic semiconducting p-type tetracene thin film. The photoluminescence (PL) intensity in the hybrid region of the MoS2/tetracene is clearly lower than that of pristine tetracene because of the charge-transfer effect, which was confirmed by the decrease in exciton lifetimes. Decrease in the temperature led to blue-shift in the PL peak position of MoS2 layers and, consequently, the PL intensities of both tetracene and MoS2 considerably increased owing to the decrease in phonon interaction. The PL spectra of bound excitons in the hybrid region were clearly observed at low temperatures, indicating the formation of trap states. The lateral-type n-p heterojunction field-effect transistors (FETs) using the MoS2/tetracene hybrid as an active layer showed gate-tunable rectification I-V and anti-ambipolar field-effect characteristics with hysteresis effect. The charge transport characteristics across the n-p heterojunction of the hybrid region of the FET can be explained in terms of the Shockley-Read-Hall trap-intermediated tunneling and Langevin recombination mechanisms. To improve the performance of MoS2/tetracene-based FET, a dielectric hexagonal boron nitride (h-BN) thin layer was inserted between the SiO2 surface and the active MoS2 layer. We observed the decrease in the hysteresis effect and threshold voltage of the h-BN/MoS2/tetracene-based FETs due to the decrease in the number of traps at the interface. The performance of h-BN/MoS2/tetracene FET device was also enhanced after the annealing process.",
keywords = "anti-ambipolar, mobility, MoS, photoluminescence, tetracene, transistor",
author = "Park, {Hyeon Jung} and Park, {Cheol Joon} and Kim, {Jun Young} and Kim, {Min Su} and Jeongyong Kim and Jinsoo Joo",
year = "2018",
month = "9",
day = "26",
doi = "10.1021/acsami.8b10525",
language = "English",
volume = "10",
pages = "32556--32566",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "38",

}

TY - JOUR

T1 - Hybrid Characteristics of MoS2 Monolayer with Organic Semiconducting Tetracene and Application to Anti-Ambipolar Field Effect Transistor

AU - Park, Hyeon Jung

AU - Park, Cheol Joon

AU - Kim, Jun Young

AU - Kim, Min Su

AU - Kim, Jeongyong

AU - Joo, Jinsoo

PY - 2018/9/26

Y1 - 2018/9/26

N2 - An n-type MoS2 monolayer grown by chemical vapor deposition method was partially hybridized with an organic semiconducting p-type tetracene thin film. The photoluminescence (PL) intensity in the hybrid region of the MoS2/tetracene is clearly lower than that of pristine tetracene because of the charge-transfer effect, which was confirmed by the decrease in exciton lifetimes. Decrease in the temperature led to blue-shift in the PL peak position of MoS2 layers and, consequently, the PL intensities of both tetracene and MoS2 considerably increased owing to the decrease in phonon interaction. The PL spectra of bound excitons in the hybrid region were clearly observed at low temperatures, indicating the formation of trap states. The lateral-type n-p heterojunction field-effect transistors (FETs) using the MoS2/tetracene hybrid as an active layer showed gate-tunable rectification I-V and anti-ambipolar field-effect characteristics with hysteresis effect. The charge transport characteristics across the n-p heterojunction of the hybrid region of the FET can be explained in terms of the Shockley-Read-Hall trap-intermediated tunneling and Langevin recombination mechanisms. To improve the performance of MoS2/tetracene-based FET, a dielectric hexagonal boron nitride (h-BN) thin layer was inserted between the SiO2 surface and the active MoS2 layer. We observed the decrease in the hysteresis effect and threshold voltage of the h-BN/MoS2/tetracene-based FETs due to the decrease in the number of traps at the interface. The performance of h-BN/MoS2/tetracene FET device was also enhanced after the annealing process.

AB - An n-type MoS2 monolayer grown by chemical vapor deposition method was partially hybridized with an organic semiconducting p-type tetracene thin film. The photoluminescence (PL) intensity in the hybrid region of the MoS2/tetracene is clearly lower than that of pristine tetracene because of the charge-transfer effect, which was confirmed by the decrease in exciton lifetimes. Decrease in the temperature led to blue-shift in the PL peak position of MoS2 layers and, consequently, the PL intensities of both tetracene and MoS2 considerably increased owing to the decrease in phonon interaction. The PL spectra of bound excitons in the hybrid region were clearly observed at low temperatures, indicating the formation of trap states. The lateral-type n-p heterojunction field-effect transistors (FETs) using the MoS2/tetracene hybrid as an active layer showed gate-tunable rectification I-V and anti-ambipolar field-effect characteristics with hysteresis effect. The charge transport characteristics across the n-p heterojunction of the hybrid region of the FET can be explained in terms of the Shockley-Read-Hall trap-intermediated tunneling and Langevin recombination mechanisms. To improve the performance of MoS2/tetracene-based FET, a dielectric hexagonal boron nitride (h-BN) thin layer was inserted between the SiO2 surface and the active MoS2 layer. We observed the decrease in the hysteresis effect and threshold voltage of the h-BN/MoS2/tetracene-based FETs due to the decrease in the number of traps at the interface. The performance of h-BN/MoS2/tetracene FET device was also enhanced after the annealing process.

KW - anti-ambipolar

KW - mobility

KW - MoS

KW - photoluminescence

KW - tetracene

KW - transistor

UR - http://www.scopus.com/inward/record.url?scp=85053691017&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85053691017&partnerID=8YFLogxK

U2 - 10.1021/acsami.8b10525

DO - 10.1021/acsami.8b10525

M3 - Article

VL - 10

SP - 32556

EP - 32566

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 38

ER -