Hybrid indium tin oxide/Ag nanowire electrodes for improving the light output power of near ultraviolet AlGaN-based light-emitting diode

Jae Seong Park; Jae Ho Kim; Jun Yong Kim; Dae Hyun Kim; Daesung Kang; Jun Suk Sung; Tae Yeon Seong

doi:10.1016/j.cap.2016.03.004

Hybrid indium tin oxide/Ag nanowire electrodes for improving the light output power of near ultraviolet AlGaN-based light-emitting diode

Jae Seong Park, Jae Ho Kim, Jun Yong Kim, Dae Hyun Kim, Daesung Kang, Jun Suk Sung, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Ag nanowires (Ag NWs) were combined with a thin indium tin oxide (ITO) film as the p-type electrode in near ultraviolet (NUV) AlGaN-based light-emitting diodes (LEDs) to improve the light output power. The Ag NWs (30 ± 5 nm in diameter and 25 ± 5 μm long) were dispersed in ethanol (0.3 wt%). The transmittances of 10 nm-thick ITO, ITO/Ag NWs coated at 1000 rpm, and ITO/Ag NWs coated at 3000 rpm were 98%, 90%, and 97% at 385 nm, respectively. LEDs (chip size: 300 × 800 μm²) fabricated with the ITO/Ag NW electrode exhibited higher forward-bias voltages than the LEDs with the ITO-only electrode. However, LEDs with ITO/Ag NWs films coated at 1000 and 3000 rpm yielded 7.9 and 14.0% higher light output power, respectively, at 100 mA than the LED with ITO-only electrode. The improved output power with the ITO/Ag NWs films is attributed to an optimal trade-off between optical transmittance and current spreading.

Original language	English
Pages (from-to)	545-548
Number of pages	4
Journal	Current Applied Physics
Volume	16
Issue number	5
DOIs	https://doi.org/10.1016/j.cap.2016.03.004
Publication status	Published - 2016 May 1

Keywords

Current spreading
Near ultraviolet light-emitting diodes
Silver nanowires

ASJC Scopus subject areas

Materials Science(all)
Physics and Astronomy(all)

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10.1016/j.cap.2016.03.004

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Hybrid indium tin oxide/Ag nanowire electrodes for improving the light output power of near ultraviolet AlGaN-based light-emitting diode. / Park, Jae Seong; Kim, Jae Ho; Kim, Jun Yong; Kim, Dae Hyun; Kang, Daesung; Sung, Jun Suk; Seong, Tae Yeon.

In: Current Applied Physics, Vol. 16, No. 5, 01.05.2016, p. 545-548.

Research output: Contribution to journal › Article › peer-review

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title = "Hybrid indium tin oxide/Ag nanowire electrodes for improving the light output power of near ultraviolet AlGaN-based light-emitting diode",

abstract = "Ag nanowires (Ag NWs) were combined with a thin indium tin oxide (ITO) film as the p-type electrode in near ultraviolet (NUV) AlGaN-based light-emitting diodes (LEDs) to improve the light output power. The Ag NWs (30 ± 5 nm in diameter and 25 ± 5 μm long) were dispersed in ethanol (0.3 wt%). The transmittances of 10 nm-thick ITO, ITO/Ag NWs coated at 1000 rpm, and ITO/Ag NWs coated at 3000 rpm were 98%, 90%, and 97% at 385 nm, respectively. LEDs (chip size: 300 × 800 μm2) fabricated with the ITO/Ag NW electrode exhibited higher forward-bias voltages than the LEDs with the ITO-only electrode. However, LEDs with ITO/Ag NWs films coated at 1000 and 3000 rpm yielded 7.9 and 14.0% higher light output power, respectively, at 100 mA than the LED with ITO-only electrode. The improved output power with the ITO/Ag NWs films is attributed to an optimal trade-off between optical transmittance and current spreading.",

keywords = "Current spreading, Near ultraviolet light-emitting diodes, Silver nanowires",

author = "Park, {Jae Seong} and Kim, {Jae Ho} and Kim, {Jun Yong} and Kim, {Dae Hyun} and Daesung Kang and Sung, {Jun Suk} and Seong, {Tae Yeon}",

note = "Funding Information: This work was supported by the Brain Korea 21 plus program funded by the Ministry of Science, ICT, and Future Planning, Korea . Publisher Copyright: {\textcopyright} 2016 Elsevier B.V. All rights reserved.",

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AU - Park, Jae Seong

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AU - Kim, Dae Hyun

AU - Kang, Daesung

AU - Sung, Jun Suk

AU - Seong, Tae Yeon

N1 - Funding Information: This work was supported by the Brain Korea 21 plus program funded by the Ministry of Science, ICT, and Future Planning, Korea . Publisher Copyright: © 2016 Elsevier B.V. All rights reserved.

PY - 2016/5/1

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N2 - Ag nanowires (Ag NWs) were combined with a thin indium tin oxide (ITO) film as the p-type electrode in near ultraviolet (NUV) AlGaN-based light-emitting diodes (LEDs) to improve the light output power. The Ag NWs (30 ± 5 nm in diameter and 25 ± 5 μm long) were dispersed in ethanol (0.3 wt%). The transmittances of 10 nm-thick ITO, ITO/Ag NWs coated at 1000 rpm, and ITO/Ag NWs coated at 3000 rpm were 98%, 90%, and 97% at 385 nm, respectively. LEDs (chip size: 300 × 800 μm2) fabricated with the ITO/Ag NW electrode exhibited higher forward-bias voltages than the LEDs with the ITO-only electrode. However, LEDs with ITO/Ag NWs films coated at 1000 and 3000 rpm yielded 7.9 and 14.0% higher light output power, respectively, at 100 mA than the LED with ITO-only electrode. The improved output power with the ITO/Ag NWs films is attributed to an optimal trade-off between optical transmittance and current spreading.

AB - Ag nanowires (Ag NWs) were combined with a thin indium tin oxide (ITO) film as the p-type electrode in near ultraviolet (NUV) AlGaN-based light-emitting diodes (LEDs) to improve the light output power. The Ag NWs (30 ± 5 nm in diameter and 25 ± 5 μm long) were dispersed in ethanol (0.3 wt%). The transmittances of 10 nm-thick ITO, ITO/Ag NWs coated at 1000 rpm, and ITO/Ag NWs coated at 3000 rpm were 98%, 90%, and 97% at 385 nm, respectively. LEDs (chip size: 300 × 800 μm2) fabricated with the ITO/Ag NW electrode exhibited higher forward-bias voltages than the LEDs with the ITO-only electrode. However, LEDs with ITO/Ag NWs films coated at 1000 and 3000 rpm yielded 7.9 and 14.0% higher light output power, respectively, at 100 mA than the LED with ITO-only electrode. The improved output power with the ITO/Ag NWs films is attributed to an optimal trade-off between optical transmittance and current spreading.

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Hybrid indium tin oxide/Ag nanowire electrodes for improving the light output power of near ultraviolet AlGaN-based light-emitting diode

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