Hydrazine-based n-type doping process to modulate Dirac point of graphene and its application to complementary inverter

In Yeal Lee, Hyung Youl Park, Jin Hyung Park, Jinyeong Lee, Woo Shik Jung, Hyun Yong Yu, Sang Woo Kim, Gil Ho Kim, Jin Hong Park

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

In this paper, chemical n-type doping process of graphene using hydrazine monohydrate solution (N2H4-H2O) is demonstrated. This method successfully modulates the Dirac point of pristine graphene by adjusting the concentration of hydrazine solution and also provides an effective n-type doping in graphene. First, the hydrazine treated and pristine graphene films are systematically investigated by Raman and FT-IR spectroscopy. Second, with p- and n-channel FETs fabricated on both pristine and hydrazine treated n-type graphene, complementary graphene inverter is demonstrated.

Original languageEnglish
Pages (from-to)1586-1590
Number of pages5
JournalOrganic Electronics
Volume14
Issue number6
DOIs
Publication statusPublished - 2013 Jun

Keywords

  • Graphene
  • Hydrazine
  • Inverter
  • N-doping

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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    Lee, I. Y., Park, H. Y., Park, J. H., Lee, J., Jung, W. S., Yu, H. Y., Kim, S. W., Kim, G. H., & Park, J. H. (2013). Hydrazine-based n-type doping process to modulate Dirac point of graphene and its application to complementary inverter. Organic Electronics, 14(6), 1586-1590. https://doi.org/10.1016/j.orgel.2013.03.022