Hydrazine-based n-type doping process to modulate Dirac point of graphene and its application to complementary inverter

In Yeal Lee, Hyung Youl Park, Jin Hyung Park, Jinyeong Lee, Woo Shik Jung, Hyun-Yong Yu, Sang Woo Kim, Gil Ho Kim, Jin Hong Park

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

In this paper, chemical n-type doping process of graphene using hydrazine monohydrate solution (N2H4-H2O) is demonstrated. This method successfully modulates the Dirac point of pristine graphene by adjusting the concentration of hydrazine solution and also provides an effective n-type doping in graphene. First, the hydrazine treated and pristine graphene films are systematically investigated by Raman and FT-IR spectroscopy. Second, with p- and n-channel FETs fabricated on both pristine and hydrazine treated n-type graphene, complementary graphene inverter is demonstrated.

Original languageEnglish
Pages (from-to)1586-1590
Number of pages5
JournalOrganic Electronics: physics, materials, applications
Volume14
Issue number6
DOIs
Publication statusPublished - 2013 Jun 1

Keywords

  • Graphene
  • Hydrazine
  • Inverter
  • N-doping

ASJC Scopus subject areas

  • Biomaterials
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Chemistry(all)
  • Condensed Matter Physics

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