TY - JOUR
T1 - Hydrogen passivation effects under negative bias temperature instability stress in metal/silicon-oxide/silicon-nitride/silicon-oxide/silicon capacitors for flash memories
AU - Kim, Hee Dong
AU - An, Ho Myoung
AU - Seo, Yujeong
AU - Zhang, Yongjie
AU - Park, Jong Sun
AU - Kim, Tae Geun
N1 - Funding Information:
This work was supported by a Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MEST) (Quantum Photonic Science Research Center), and also partly supported by the National Research Foundation (NRF) grant funded by the Korea government (No. K20901000002-09E0100-00210).
Copyright:
Copyright 2010 Elsevier B.V., All rights reserved.
PY - 2010/1
Y1 - 2010/1
N2 - The paper presents the passivation effect of post-annealing gases on the negative bias temperature instability of metal/silicon-oxide/silicon-nitride/silicon-oxide/silicon (MONOS) capacitors. MONOS samples annealed at 850 °C for 30 s by a rapid thermal annealing (RTA) are treated by additional annealing in a furnace, using annealing gases N2 and N2-H2 (2% hydrogen and 98% nitrogen gas mixture) at 450 °C for 30 min. MONOS samples annealed in an N2-H2 environment are found to have lowest oxide trap charge density shift, ΔNot = 8.56 × 1011 cm-2, and the lowest interface-trap density increase, ΔNit = 4.49 × 1011 cm-2 among the three samples as-deposited, annealed in N2 and N2-H2 environments. It has also been confirmed that the same MONOS samples have the lowest interface-trap density, Dit = 0.834 × 1011 eV-1 cm-2, using small pulse deep level transient spectroscopy. These results indicate that the density of interface traps between the silicon substrate and the tunneling oxide layer are significantly reduced by the additional furnace annealing in the N2-H2 environment after the RTA.
AB - The paper presents the passivation effect of post-annealing gases on the negative bias temperature instability of metal/silicon-oxide/silicon-nitride/silicon-oxide/silicon (MONOS) capacitors. MONOS samples annealed at 850 °C for 30 s by a rapid thermal annealing (RTA) are treated by additional annealing in a furnace, using annealing gases N2 and N2-H2 (2% hydrogen and 98% nitrogen gas mixture) at 450 °C for 30 min. MONOS samples annealed in an N2-H2 environment are found to have lowest oxide trap charge density shift, ΔNot = 8.56 × 1011 cm-2, and the lowest interface-trap density increase, ΔNit = 4.49 × 1011 cm-2 among the three samples as-deposited, annealed in N2 and N2-H2 environments. It has also been confirmed that the same MONOS samples have the lowest interface-trap density, Dit = 0.834 × 1011 eV-1 cm-2, using small pulse deep level transient spectroscopy. These results indicate that the density of interface traps between the silicon substrate and the tunneling oxide layer are significantly reduced by the additional furnace annealing in the N2-H2 environment after the RTA.
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U2 - 10.1016/j.microrel.2009.09.008
DO - 10.1016/j.microrel.2009.09.008
M3 - Article
AN - SCOPUS:72449127023
SN - 0026-2714
VL - 50
SP - 21
EP - 25
JO - Microelectronics and Reliability
JF - Microelectronics and Reliability
IS - 1
ER -