Hydrogen plasma treatment of β -Ga2O3: Changes in electrical properties and deep trap spectra

A. Y. Polyakov; In Hwan Lee; N. B. Smirnov; E. B. Yakimov; I. V. Shchemerov; A. V. Chernykh; A. I. Kochkova; A. A. Vasilev; F. Ren; P. H. Carey; S. J. Pearton

doi:10.1063/1.5108790

Hydrogen plasma treatment of β -Ga₂O₃: Changes in electrical properties and deep trap spectra

A. Y. Polyakov, In Hwan Lee, N. B. Smirnov, E. B. Yakimov, I. V. Shchemerov, A. V. Chernykh, A. I. Kochkova, A. A. Vasilev, F. Ren, P. H. Carey, S. J. Pearton

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

The effects of hydrogen plasma treatment of β-Ga₂O₃ grown by halide vapor phase epitaxy and doped with Si are reported. Samples subjected to H plasma exposure at 330 °C developed a wide (∼2.5 μm-thick) region near the surface, depleted of electrons at room temperature. The thickness of the layer is in reasonable agreement with the estimated hydrogen penetration depth in β-Ga₂O₃ based on previous deuterium profiling experiments. Admittance spectroscopy and photoinduced current transient spectroscopy measurements place the Fermi level pinning position in the H treated film near E_c-1.05 eV. Annealing at 450 °C decreased the thickness of the depletion layer to 1.3 μm at room temperature and moved the Fermi level pinning position to E_c-0.8 eV. Further annealing at 550 °C almost restored the starting shallow donor concentration and the spectra of deep traps dominated by E_c-0.8 eV and E_c-1.05 eV observed before hydrogen treatment. It is suggested that hydrogen plasma exposure produces surface damage in the near-surface region and passivates or compensates shallow donors.

Original language	English
Article number	032101
Journal	Applied Physics Letters
Volume	115
Issue number	3
DOIs	https://doi.org/10.1063/1.5108790
Publication status	Published - 2019 Jul 15

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{39afa29878b74cc6b3eef20759428e7e,

title = "Hydrogen plasma treatment of β -Ga2O3: Changes in electrical properties and deep trap spectra",

abstract = "The effects of hydrogen plasma treatment of β-Ga2O3 grown by halide vapor phase epitaxy and doped with Si are reported. Samples subjected to H plasma exposure at 330 °C developed a wide (∼2.5 μm-thick) region near the surface, depleted of electrons at room temperature. The thickness of the layer is in reasonable agreement with the estimated hydrogen penetration depth in β-Ga2O3 based on previous deuterium profiling experiments. Admittance spectroscopy and photoinduced current transient spectroscopy measurements place the Fermi level pinning position in the H treated film near Ec-1.05 eV. Annealing at 450 °C decreased the thickness of the depletion layer to 1.3 μm at room temperature and moved the Fermi level pinning position to Ec-0.8 eV. Further annealing at 550 °C almost restored the starting shallow donor concentration and the spectra of deep traps dominated by Ec-0.8 eV and Ec-1.05 eV observed before hydrogen treatment. It is suggested that hydrogen plasma exposure produces surface damage in the near-surface region and passivates or compensates shallow donors.",

author = "Polyakov, {A. Y.} and Lee, {In Hwan} and Smirnov, {N. B.} and Yakimov, {E. B.} and Shchemerov, {I. V.} and Chernykh, {A. V.} and Kochkova, {A. I.} and Vasilev, {A. A.} and F. Ren and Carey, {P. H.} and Pearton, {S. J.}",

note = "Funding Information: The work at NUST MISiS was supported in part by the Russian Science Foundation, grant no. 19-19-00409. The work at IMT RAS was supported by the State Task No. 075-00475-19-00. The work at UF was sponsored by the Department of the Defense, Defense Threat Reduction Agency, HDTRA1-17-1-011, monitored by Jacob Calkins and also by NSF DMR 1856662 (Tania Paskova). Publisher Copyright: {\textcopyright} 2019 Author(s).",

year = "2019",

month = jul,

day = "15",

doi = "10.1063/1.5108790",

language = "English",

volume = "115",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "3",

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TY - JOUR

T1 - Hydrogen plasma treatment of β -Ga2O3

T2 - Changes in electrical properties and deep trap spectra

AU - Polyakov, A. Y.

AU - Lee, In Hwan

AU - Smirnov, N. B.

AU - Yakimov, E. B.

AU - Shchemerov, I. V.

AU - Chernykh, A. V.

AU - Kochkova, A. I.

AU - Vasilev, A. A.

AU - Ren, F.

AU - Carey, P. H.

AU - Pearton, S. J.

N1 - Funding Information: The work at NUST MISiS was supported in part by the Russian Science Foundation, grant no. 19-19-00409. The work at IMT RAS was supported by the State Task No. 075-00475-19-00. The work at UF was sponsored by the Department of the Defense, Defense Threat Reduction Agency, HDTRA1-17-1-011, monitored by Jacob Calkins and also by NSF DMR 1856662 (Tania Paskova). Publisher Copyright: © 2019 Author(s).

PY - 2019/7/15

Y1 - 2019/7/15

N2 - The effects of hydrogen plasma treatment of β-Ga2O3 grown by halide vapor phase epitaxy and doped with Si are reported. Samples subjected to H plasma exposure at 330 °C developed a wide (∼2.5 μm-thick) region near the surface, depleted of electrons at room temperature. The thickness of the layer is in reasonable agreement with the estimated hydrogen penetration depth in β-Ga2O3 based on previous deuterium profiling experiments. Admittance spectroscopy and photoinduced current transient spectroscopy measurements place the Fermi level pinning position in the H treated film near Ec-1.05 eV. Annealing at 450 °C decreased the thickness of the depletion layer to 1.3 μm at room temperature and moved the Fermi level pinning position to Ec-0.8 eV. Further annealing at 550 °C almost restored the starting shallow donor concentration and the spectra of deep traps dominated by Ec-0.8 eV and Ec-1.05 eV observed before hydrogen treatment. It is suggested that hydrogen plasma exposure produces surface damage in the near-surface region and passivates or compensates shallow donors.

AB - The effects of hydrogen plasma treatment of β-Ga2O3 grown by halide vapor phase epitaxy and doped with Si are reported. Samples subjected to H plasma exposure at 330 °C developed a wide (∼2.5 μm-thick) region near the surface, depleted of electrons at room temperature. The thickness of the layer is in reasonable agreement with the estimated hydrogen penetration depth in β-Ga2O3 based on previous deuterium profiling experiments. Admittance spectroscopy and photoinduced current transient spectroscopy measurements place the Fermi level pinning position in the H treated film near Ec-1.05 eV. Annealing at 450 °C decreased the thickness of the depletion layer to 1.3 μm at room temperature and moved the Fermi level pinning position to Ec-0.8 eV. Further annealing at 550 °C almost restored the starting shallow donor concentration and the spectra of deep traps dominated by Ec-0.8 eV and Ec-1.05 eV observed before hydrogen treatment. It is suggested that hydrogen plasma exposure produces surface damage in the near-surface region and passivates or compensates shallow donors.

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U2 - 10.1063/1.5108790

DO - 10.1063/1.5108790

M3 - Article

AN - SCOPUS:85068974006

VL - 115

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 3

M1 - 032101

ER -

Hydrogen plasma treatment of β -Ga₂O₃: Changes in electrical properties and deep trap spectra

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