Hydrogen sensing characteristics of Pt Schottky diodes on (201) and (010) Ga2O3 single crystals

Soohwan Jang, Sunwoo Jung, Jihyun Kim, Fan Ren, Stephen J. Pearton, Kwang Hyeon Baik

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

We investigated the hydrogen sensing characteristics of Pt Schottky diodes on (201) and (010) β-Ga2O3 bulk crystals. The Pt Schottky diodes on β-Ga2O3 wafer exhibited the fast, reversible, and cyclic response upon hydrogen exposure. The maximum value of the relative current change of the (201) Ga2O3 diode sensor was as high as 7.86 × 107 (%) at 0.8 V, which is slightly higher than that of the (010) Ga2O3 diode. The hydrogen responses of both β-Ga2O3 diode sensors are believed to result from oxygen and gallium atomic configurations of Ga2O3 surfaces for hydrogen adsorption. The Pt Schottky diodes of Ga2O3 wafers did not show any clear response to other gases, such as N2, CO, CO2, O2, CH4, NO2, andNH3. Our finding suggests that the Pt Schottky diodes on β-Ga2O3 hold great potential for the applications of hydrogen gas sensors with high sensitivity and selectivity.

Original languageEnglish
Pages (from-to)Q3180-Q3182
JournalECS Journal of Solid State Science and Technology
Volume7
Issue number7
DOIs
Publication statusPublished - 2018

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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