TY - JOUR
T1 - Hydrogen sensing characteristics of Pt Schottky diodes on (201) and (010) Ga2O3 single crystals
AU - Jang, Soohwan
AU - Jung, Sunwoo
AU - Kim, Jihyun
AU - Ren, Fan
AU - Pearton, Stephen J.
AU - Baik, Kwang Hyeon
N1 - Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2015R1D1A1A01058663, 2017R1D1A3B03035420), and Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2015M3A7B7045185). This present research was also supported by 2018 Hongik University Research Fund.
Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2015R1D1A1A01058663, 2017R1D1A3B03035420), and Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2015M3A7B7045185). This present research was also supported by 2018 Hongik University Research Fund
Publisher Copyright:
© The Author(s) 2018. Published by ECS.
PY - 2018
Y1 - 2018
N2 - We investigated the hydrogen sensing characteristics of Pt Schottky diodes on (201) and (010) β-Ga2O3 bulk crystals. The Pt Schottky diodes on β-Ga2O3 wafer exhibited the fast, reversible, and cyclic response upon hydrogen exposure. The maximum value of the relative current change of the (201) Ga2O3 diode sensor was as high as 7.86 × 107 (%) at 0.8 V, which is slightly higher than that of the (010) Ga2O3 diode. The hydrogen responses of both β-Ga2O3 diode sensors are believed to result from oxygen and gallium atomic configurations of Ga2O3 surfaces for hydrogen adsorption. The Pt Schottky diodes of Ga2O3 wafers did not show any clear response to other gases, such as N2, CO, CO2, O2, CH4, NO2, andNH3. Our finding suggests that the Pt Schottky diodes on β-Ga2O3 hold great potential for the applications of hydrogen gas sensors with high sensitivity and selectivity.
AB - We investigated the hydrogen sensing characteristics of Pt Schottky diodes on (201) and (010) β-Ga2O3 bulk crystals. The Pt Schottky diodes on β-Ga2O3 wafer exhibited the fast, reversible, and cyclic response upon hydrogen exposure. The maximum value of the relative current change of the (201) Ga2O3 diode sensor was as high as 7.86 × 107 (%) at 0.8 V, which is slightly higher than that of the (010) Ga2O3 diode. The hydrogen responses of both β-Ga2O3 diode sensors are believed to result from oxygen and gallium atomic configurations of Ga2O3 surfaces for hydrogen adsorption. The Pt Schottky diodes of Ga2O3 wafers did not show any clear response to other gases, such as N2, CO, CO2, O2, CH4, NO2, andNH3. Our finding suggests that the Pt Schottky diodes on β-Ga2O3 hold great potential for the applications of hydrogen gas sensors with high sensitivity and selectivity.
UR - http://www.scopus.com/inward/record.url?scp=85051377130&partnerID=8YFLogxK
U2 - 10.1149/2.0261807jss
DO - 10.1149/2.0261807jss
M3 - Article
AN - SCOPUS:85051377130
SN - 2162-8769
VL - 7
SP - Q3180-Q3182
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
IS - 7
ER -