Hydrogen-surfactant mediated growth of Ge on Si(001)

S. J. Kahng; Y. H. Ha; J. Y. Park; S. Kim; D. W. Moon; Y. Kuk

doi:10.1103/PhysRevLett.80.4931

Hydrogen-surfactant mediated growth of Ge on Si(001)

S. J. Kahng, Y. H. Ha, J. Y. Park, S. Kim, D. W. Moon, Y. Kuk

Research output: Contribution to journal › Article › peer-review

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Abstract

The role of hydrogen in the growth of Ge on a Si(001)-(2×1) surface was studied by scanning tunneling microscopy and medium energy ion scattering spectroscopy. The adsorbed hydrogen was found to (i) increase the number of equilibrium adsorption sites, (ii) lift the diffusion anisotropy, and (iii) lower the diffusivity for Ge adatom, as suggested by the recent first principle calculation. With a dynamically supplied atomic hydrogen flux of ∼2monolayers/s, we achieved layer-by-layer growth by preventing growth of the hut cluster beyond the known critical thickness. The 10.0 monolayer Ge layers grown with hydrogen surfactant are strained, while those without it are relaxed.

Original language	English
Pages (from-to)	4931-4934
Number of pages	4
Journal	Physical review letters
Volume	80
Issue number	22
DOIs	https://doi.org/10.1103/PhysRevLett.80.4931
Publication status	Published - 1998
Externally published	Yes

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Physics and Astronomy(all)

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AU - Kahng, S. J.

AU - Ha, Y. H.

AU - Park, J. Y.

AU - Kim, S.

AU - Moon, D. W.

AU - Kuk, Y.

PY - 1998

Y1 - 1998

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AB - The role of hydrogen in the growth of Ge on a Si(001)-(2×1) surface was studied by scanning tunneling microscopy and medium energy ion scattering spectroscopy. The adsorbed hydrogen was found to (i) increase the number of equilibrium adsorption sites, (ii) lift the diffusion anisotropy, and (iii) lower the diffusivity for Ge adatom, as suggested by the recent first principle calculation. With a dynamically supplied atomic hydrogen flux of ∼2monolayers/s, we achieved layer-by-layer growth by preventing growth of the hut cluster beyond the known critical thickness. The 10.0 monolayer Ge layers grown with hydrogen surfactant are strained, while those without it are relaxed.

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JO - Physical Review Letters

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Hydrogen-surfactant mediated growth of Ge on Si(001)

Abstract

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