TY - JOUR
T1 - Hydrogen-surfactant mediated growth of Ge on Si(001)
AU - Kahng, S. J.
AU - Ha, Y. H.
AU - Park, J. Y.
AU - Kim, S.
AU - Moon, D. W.
AU - Kuk, Y.
N1 - Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 1998
Y1 - 1998
N2 - The role of hydrogen in the growth of Ge on a Si(001)-(2×1) surface was studied by scanning tunneling microscopy and medium energy ion scattering spectroscopy. The adsorbed hydrogen was found to (i) increase the number of equilibrium adsorption sites, (ii) lift the diffusion anisotropy, and (iii) lower the diffusivity for Ge adatom, as suggested by the recent first principle calculation. With a dynamically supplied atomic hydrogen flux of ∼2monolayers/s, we achieved layer-by-layer growth by preventing growth of the hut cluster beyond the known critical thickness. The 10.0 monolayer Ge layers grown with hydrogen surfactant are strained, while those without it are relaxed.
AB - The role of hydrogen in the growth of Ge on a Si(001)-(2×1) surface was studied by scanning tunneling microscopy and medium energy ion scattering spectroscopy. The adsorbed hydrogen was found to (i) increase the number of equilibrium adsorption sites, (ii) lift the diffusion anisotropy, and (iii) lower the diffusivity for Ge adatom, as suggested by the recent first principle calculation. With a dynamically supplied atomic hydrogen flux of ∼2monolayers/s, we achieved layer-by-layer growth by preventing growth of the hut cluster beyond the known critical thickness. The 10.0 monolayer Ge layers grown with hydrogen surfactant are strained, while those without it are relaxed.
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U2 - 10.1103/PhysRevLett.80.4931
DO - 10.1103/PhysRevLett.80.4931
M3 - Article
AN - SCOPUS:4243997529
VL - 80
SP - 4931
EP - 4934
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 22
ER -