Hydrogenation effect on 1.54-μm Er luminescence in Er-doped amorphous silicon quantum dot films

Nae Man Park, Tae Youb Kim, Kyung Hyun Kim, Gun Yong Sung, Kwan Sik Cho, Jung H. Shin, Baek Hyun Kim, Seong Ju Park, Jung Kun Lee, Michael Nastasi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The hydrogenation effect on Er luminescence in Er-doped a-Si QD films was analyzed. The a-Si QD embedded in silicon nitride film were grown on Si substrate by plasma enhanced chemical vapor deposition with various dot size. The Er+ ions were implanted with a dose of 1×10 21/cm3 into nitride films containing a-Si QDs to overlap the profiles. Analysis shows that the excitation efficiency is increased after hydrogenation in all samples which is likely due to defect passivation by hydrogen.

Original languageEnglish
Title of host publication2004 1st IEEE International Conference on Group IV Photonics
Pages92-94
Number of pages3
Publication statusPublished - 2004 Dec 1
Externally publishedYes
Event2004 1st IEEE International Conference on Group IV Photonics - Hong Kong, China, Hong Kong
Duration: 2004 Sep 292004 Oct 1

Other

Other2004 1st IEEE International Conference on Group IV Photonics
CountryHong Kong
CityHong Kong, China
Period04/9/2904/10/1

Fingerprint

Amorphous silicon
Semiconductor quantum dots
Hydrogenation
Luminescence
Plasma enhanced chemical vapor deposition
Silicon nitride
Passivation
Nitrides
Hydrogen
Defects
Ions
Substrates

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Park, N. M., Kim, T. Y., Kim, K. H., Sung, G. Y., Cho, K. S., Shin, J. H., ... Nastasi, M. (2004). Hydrogenation effect on 1.54-μm Er luminescence in Er-doped amorphous silicon quantum dot films. In 2004 1st IEEE International Conference on Group IV Photonics (pp. 92-94)

Hydrogenation effect on 1.54-μm Er luminescence in Er-doped amorphous silicon quantum dot films. / Park, Nae Man; Kim, Tae Youb; Kim, Kyung Hyun; Sung, Gun Yong; Cho, Kwan Sik; Shin, Jung H.; Kim, Baek Hyun; Park, Seong Ju; Lee, Jung Kun; Nastasi, Michael.

2004 1st IEEE International Conference on Group IV Photonics. 2004. p. 92-94.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Park, NM, Kim, TY, Kim, KH, Sung, GY, Cho, KS, Shin, JH, Kim, BH, Park, SJ, Lee, JK & Nastasi, M 2004, Hydrogenation effect on 1.54-μm Er luminescence in Er-doped amorphous silicon quantum dot films. in 2004 1st IEEE International Conference on Group IV Photonics. pp. 92-94, 2004 1st IEEE International Conference on Group IV Photonics, Hong Kong, China, Hong Kong, 04/9/29.
Park NM, Kim TY, Kim KH, Sung GY, Cho KS, Shin JH et al. Hydrogenation effect on 1.54-μm Er luminescence in Er-doped amorphous silicon quantum dot films. In 2004 1st IEEE International Conference on Group IV Photonics. 2004. p. 92-94
Park, Nae Man ; Kim, Tae Youb ; Kim, Kyung Hyun ; Sung, Gun Yong ; Cho, Kwan Sik ; Shin, Jung H. ; Kim, Baek Hyun ; Park, Seong Ju ; Lee, Jung Kun ; Nastasi, Michael. / Hydrogenation effect on 1.54-μm Er luminescence in Er-doped amorphous silicon quantum dot films. 2004 1st IEEE International Conference on Group IV Photonics. 2004. pp. 92-94
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AU - Cho, Kwan Sik

AU - Shin, Jung H.

AU - Kim, Baek Hyun

AU - Park, Seong Ju

AU - Lee, Jung Kun

AU - Nastasi, Michael

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N2 - The hydrogenation effect on Er luminescence in Er-doped a-Si QD films was analyzed. The a-Si QD embedded in silicon nitride film were grown on Si substrate by plasma enhanced chemical vapor deposition with various dot size. The Er+ ions were implanted with a dose of 1×10 21/cm3 into nitride films containing a-Si QDs to overlap the profiles. Analysis shows that the excitation efficiency is increased after hydrogenation in all samples which is likely due to defect passivation by hydrogen.

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