Hydrostatic pressure dependence of isoelectronic bound excitons in beryllium-doped silicon

Sangsig Kim, Irving P. Herman, Karen L. Moore, Dennis G. Hall, Joze Bevk

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Photoluminescence (PL) from the recombination of excitons bound to isoelectronic Be2 dopants in bulk silicon is measured for pressures up to 60 kbar and temperatures down to 9 K. PL from excitons bound to this Be2 trap is analyzed by using the Hopfield-Thomas-Lynch model, extended to treat more complex isoelectronic dopants, and several different binding potentials. This modified model describes the change in exciton binding energy with pressure determined from the PL spectrum and the loss of PL at and above 60 kbar when short-range potentials are used. The depth of the potential in this model is relatively insensitive to pressure. Coulomb-based models do not explain these observations as well.

Original languageEnglish
Pages (from-to)4434-4442
Number of pages9
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume53
Issue number8
Publication statusPublished - 1996 Dec 1
Externally publishedYes

Fingerprint

Beryllium
Silicon
Hydrostatic pressure
beryllium
Excitons
hydrostatic pressure
pressure dependence
Photoluminescence
excitons
photoluminescence
silicon
Doping (additives)
Binding energy
binding energy
traps
LDS 751
Temperature
temperature

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Hydrostatic pressure dependence of isoelectronic bound excitons in beryllium-doped silicon. / Kim, Sangsig; Herman, Irving P.; Moore, Karen L.; Hall, Dennis G.; Bevk, Joze.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 53, No. 8, 01.12.1996, p. 4434-4442.

Research output: Contribution to journalArticle

Kim, Sangsig ; Herman, Irving P. ; Moore, Karen L. ; Hall, Dennis G. ; Bevk, Joze. / Hydrostatic pressure dependence of isoelectronic bound excitons in beryllium-doped silicon. In: Physical Review B - Condensed Matter and Materials Physics. 1996 ; Vol. 53, No. 8. pp. 4434-4442.
@article{e6775190056d41b496f5b39e85b68d6c,
title = "Hydrostatic pressure dependence of isoelectronic bound excitons in beryllium-doped silicon",
abstract = "Photoluminescence (PL) from the recombination of excitons bound to isoelectronic Be2 dopants in bulk silicon is measured for pressures up to 60 kbar and temperatures down to 9 K. PL from excitons bound to this Be2 trap is analyzed by using the Hopfield-Thomas-Lynch model, extended to treat more complex isoelectronic dopants, and several different binding potentials. This modified model describes the change in exciton binding energy with pressure determined from the PL spectrum and the loss of PL at and above 60 kbar when short-range potentials are used. The depth of the potential in this model is relatively insensitive to pressure. Coulomb-based models do not explain these observations as well.",
author = "Sangsig Kim and Herman, {Irving P.} and Moore, {Karen L.} and Hall, {Dennis G.} and Joze Bevk",
year = "1996",
month = "12",
day = "1",
language = "English",
volume = "53",
pages = "4434--4442",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Institute of Physics Publising LLC",
number = "8",

}

TY - JOUR

T1 - Hydrostatic pressure dependence of isoelectronic bound excitons in beryllium-doped silicon

AU - Kim, Sangsig

AU - Herman, Irving P.

AU - Moore, Karen L.

AU - Hall, Dennis G.

AU - Bevk, Joze

PY - 1996/12/1

Y1 - 1996/12/1

N2 - Photoluminescence (PL) from the recombination of excitons bound to isoelectronic Be2 dopants in bulk silicon is measured for pressures up to 60 kbar and temperatures down to 9 K. PL from excitons bound to this Be2 trap is analyzed by using the Hopfield-Thomas-Lynch model, extended to treat more complex isoelectronic dopants, and several different binding potentials. This modified model describes the change in exciton binding energy with pressure determined from the PL spectrum and the loss of PL at and above 60 kbar when short-range potentials are used. The depth of the potential in this model is relatively insensitive to pressure. Coulomb-based models do not explain these observations as well.

AB - Photoluminescence (PL) from the recombination of excitons bound to isoelectronic Be2 dopants in bulk silicon is measured for pressures up to 60 kbar and temperatures down to 9 K. PL from excitons bound to this Be2 trap is analyzed by using the Hopfield-Thomas-Lynch model, extended to treat more complex isoelectronic dopants, and several different binding potentials. This modified model describes the change in exciton binding energy with pressure determined from the PL spectrum and the loss of PL at and above 60 kbar when short-range potentials are used. The depth of the potential in this model is relatively insensitive to pressure. Coulomb-based models do not explain these observations as well.

UR - http://www.scopus.com/inward/record.url?scp=0038973125&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038973125&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0038973125

VL - 53

SP - 4434

EP - 4442

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 8

ER -