Abstract
Photoluminescence (PL) from the recombination of excitons bound to isoelectronic (Formula presented) dopants in bulk silicon is measured for pressures up to 60 kbar and temperatures down to 9 K. PL from excitons bound to this (Formula presented) trap is analyzed by using the Hopfield-Thomas-Lynch model, extended to treat more complex isoelectronic dopants, and several different binding potentials. This modified model describes the change in exciton binding energy with pressure determined from the PL spectrum and the loss of PL at and above 60 kbar when short-range potentials are used. The depth of the potential in this model is relatively insensitive to pressure. Coulomb-based models do not explain these observations as well.
| Original language | English |
|---|---|
| Pages (from-to) | 4434-4442 |
| Number of pages | 9 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 53 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 1996 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Kim, S., Herman, I. P., Moore, K. L., & Hall, D. G. (1996). Hydrostatic pressure dependence of isoelectronic bound excitons in beryllium-doped silicon. Physical Review B - Condensed Matter and Materials Physics, 53(8), 4434-4442. https://doi.org/10.1103/PhysRevB.53.4434