Hydrostatic pressure dependence of isoelectronic bound excitons in beryllium-doped silicon

Sangsig Kim; Irving P. Herman; Karen L. Moore; Dennis G. Hall

doi:10.1103/PhysRevB.53.4434

Hydrostatic pressure dependence of isoelectronic bound excitons in beryllium-doped silicon

Sangsig Kim, Irving P. Herman, Karen L. Moore, Dennis G. Hall

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Photoluminescence (PL) from the recombination of excitons bound to isoelectronic (Formula presented) dopants in bulk silicon is measured for pressures up to 60 kbar and temperatures down to 9 K. PL from excitons bound to this (Formula presented) trap is analyzed by using the Hopfield-Thomas-Lynch model, extended to treat more complex isoelectronic dopants, and several different binding potentials. This modified model describes the change in exciton binding energy with pressure determined from the PL spectrum and the loss of PL at and above 60 kbar when short-range potentials are used. The depth of the potential in this model is relatively insensitive to pressure. Coulomb-based models do not explain these observations as well.

Original language	English
Pages (from-to)	4434-4442
Number of pages	9
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	53
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevB.53.4434
Publication status	Published - 1996
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Hydrostatic pressure dependence of isoelectronic bound excitons in beryllium-doped silicon",

abstract = "Photoluminescence (PL) from the recombination of excitons bound to isoelectronic (Formula presented) dopants in bulk silicon is measured for pressures up to 60 kbar and temperatures down to 9 K. PL from excitons bound to this (Formula presented) trap is analyzed by using the Hopfield-Thomas-Lynch model, extended to treat more complex isoelectronic dopants, and several different binding potentials. This modified model describes the change in exciton binding energy with pressure determined from the PL spectrum and the loss of PL at and above 60 kbar when short-range potentials are used. The depth of the potential in this model is relatively insensitive to pressure. Coulomb-based models do not explain these observations as well.",

author = "Sangsig Kim and Herman, {Irving P.} and Moore, {Karen L.} and Hall, {Dennis G.}",

year = "1996",

doi = "10.1103/PhysRevB.53.4434",

language = "English",

volume = "53",

pages = "4434--4442",

journal = "Physical Review B-Condensed Matter",

issn = "1098-0121",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Hydrostatic pressure dependence of isoelectronic bound excitons in beryllium-doped silicon

AU - Kim, Sangsig

AU - Herman, Irving P.

AU - Moore, Karen L.

AU - Hall, Dennis G.

PY - 1996

Y1 - 1996

N2 - Photoluminescence (PL) from the recombination of excitons bound to isoelectronic (Formula presented) dopants in bulk silicon is measured for pressures up to 60 kbar and temperatures down to 9 K. PL from excitons bound to this (Formula presented) trap is analyzed by using the Hopfield-Thomas-Lynch model, extended to treat more complex isoelectronic dopants, and several different binding potentials. This modified model describes the change in exciton binding energy with pressure determined from the PL spectrum and the loss of PL at and above 60 kbar when short-range potentials are used. The depth of the potential in this model is relatively insensitive to pressure. Coulomb-based models do not explain these observations as well.

AB - Photoluminescence (PL) from the recombination of excitons bound to isoelectronic (Formula presented) dopants in bulk silicon is measured for pressures up to 60 kbar and temperatures down to 9 K. PL from excitons bound to this (Formula presented) trap is analyzed by using the Hopfield-Thomas-Lynch model, extended to treat more complex isoelectronic dopants, and several different binding potentials. This modified model describes the change in exciton binding energy with pressure determined from the PL spectrum and the loss of PL at and above 60 kbar when short-range potentials are used. The depth of the potential in this model is relatively insensitive to pressure. Coulomb-based models do not explain these observations as well.

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U2 - 10.1103/PhysRevB.53.4434

DO - 10.1103/PhysRevB.53.4434

M3 - Article

AN - SCOPUS:0038973125

VL - 53

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EP - 4442

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 8

ER -

Hydrostatic pressure dependence of isoelectronic bound excitons in beryllium-doped silicon

Abstract

ASJC Scopus subject areas

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