Hydrothermal growth and characterization of ZnO thin film on sapphire (0001) substrate with p-GaN buffer layer

Trilochan Sahoo, Ju Won Jeon, V. Kannan, Cheul Ro Lee, Yeon Tae Yu, Yong Won Song, In-Hwan Lee

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Monocrystalline ZnO thin films on p-GaN/sapphire (0001) substrate were grown by single step hydrothermal technique at 90 °C. ZnO thin films were grown in aqueous solution of zinc nitrate and ammonium hydroxide. The X-ray diffraction, scanning electron microscopy and room temperature photoluminescence analysis were carried out to characterize structural, morphological and optical properties of the films. The thin films revealed single crystalline nature and wurtzite symmetry. The films were c-axis oriented and have honeycomb like pitted surface morphology. The epitaxial relationship between ZnO film and p-GaN buffer layer was observed to be (0001)[112-0] ZnO ||(0001)[112-0] GaN . Sharp luminescent peak centered at 376 nm due excitonic emission and broad deep level emission peak were obtained from room temperature photoluminescence measurement of the ZnO thin film.

Original languageEnglish
Pages (from-to)8244-8247
Number of pages4
JournalThin Solid Films
Volume516
Issue number23
DOIs
Publication statusPublished - 2008 Oct 1
Externally publishedYes

Fingerprint

Aluminum Oxide
Buffer layers
Sapphire
sapphire
buffers
Thin films
Substrates
thin films
Photoluminescence
Ammonium Hydroxide
photoluminescence
Ammonium hydroxide
Crystal symmetry
room temperature
wurtzite
hydroxides
Surface morphology
nitrates
Structural properties
Nitrates

Keywords

  • Epitaxy
  • Hydrothermal deposition
  • p-type gallium nitride
  • Photoluminescence
  • Thin films
  • X-ray diffraction
  • Zinc oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Hydrothermal growth and characterization of ZnO thin film on sapphire (0001) substrate with p-GaN buffer layer. / Sahoo, Trilochan; Jeon, Ju Won; Kannan, V.; Lee, Cheul Ro; Yu, Yeon Tae; Song, Yong Won; Lee, In-Hwan.

In: Thin Solid Films, Vol. 516, No. 23, 01.10.2008, p. 8244-8247.

Research output: Contribution to journalArticle

Sahoo, Trilochan ; Jeon, Ju Won ; Kannan, V. ; Lee, Cheul Ro ; Yu, Yeon Tae ; Song, Yong Won ; Lee, In-Hwan. / Hydrothermal growth and characterization of ZnO thin film on sapphire (0001) substrate with p-GaN buffer layer. In: Thin Solid Films. 2008 ; Vol. 516, No. 23. pp. 8244-8247.
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AU - Yu, Yeon Tae

AU - Song, Yong Won

AU - Lee, In-Hwan

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AB - Monocrystalline ZnO thin films on p-GaN/sapphire (0001) substrate were grown by single step hydrothermal technique at 90 °C. ZnO thin films were grown in aqueous solution of zinc nitrate and ammonium hydroxide. The X-ray diffraction, scanning electron microscopy and room temperature photoluminescence analysis were carried out to characterize structural, morphological and optical properties of the films. The thin films revealed single crystalline nature and wurtzite symmetry. The films were c-axis oriented and have honeycomb like pitted surface morphology. The epitaxial relationship between ZnO film and p-GaN buffer layer was observed to be (0001)[112-0] ZnO ||(0001)[112-0] GaN . Sharp luminescent peak centered at 376 nm due excitonic emission and broad deep level emission peak were obtained from room temperature photoluminescence measurement of the ZnO thin film.

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