Hysteresis effects by source/drain interdigitated-finger geometry in 6,13-Bis(triisopropylsilylethynyl)pentacene thin-film transistors

Jae Hong Kwon, Sang Il Shin, Jinnil Choi, Myung Ho Chung, Hyeyeon Ryu, Ute Zschieschang, Hagen Klauk, John E. Anthony, Byeong Kwon Ju

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Abstract

This work reports on the fabrication of organic thin-film transistors (OTFTs) with a solution-based 6,13-bis(triisopropylsilylethynyl)pentacene by a drop-casting method, and the determination of the electrical properties of OTFTs having different source/drain interdigitated-finger electrodes. The results show that the hysteresis in transfer characteristics of the OTFTs depends on the variation of contact fingers. These hystereses lead to changes in threshold voltage, which originates from charge trapping/detrapping at or near the organic semiconductor/dielectric interface. These related phenomena also influence the device parameters such as the field-effect mobility, the on/off current ratio, and the gate current.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume12
Issue number8
DOIs
Publication statusPublished - 2009 Jun 29

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ASJC Scopus subject areas

  • Electrochemistry
  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Chemical Engineering(all)
  • Physical and Theoretical Chemistry

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