TY - JOUR
T1 - Hysteresis Modulation on Van der Waals-Based Ferroelectric Field-Effect Transistor by Interfacial Passivation Technique and Its Application in Optic Neural Networks
AU - Jeon, Hyeok
AU - Kim, Seung Geun
AU - Park, June
AU - Kim, Seung Hwan
AU - Park, Euyjin
AU - Kim, Jiyoung
AU - Yu, Hyun Yong
N1 - Funding Information:
H.J. and S.‐G.K. contributed equally to this work. This research was supported by the National Research Foundation of Korea(NRF) Grant funded by the Ministry of Science and ICT for Original Technology Program (No. 2020M3F3A2A01082329) and was supported by the Basic Science Research Program within the Ministry of Science, ICT, and Future Planning through the National Research Foundation of Korea under Grant No. 2020R1A2C2004029.
PY - 2020/12/10
Y1 - 2020/12/10
N2 - 2D semiconductor-based ferroelectric field effect transistors (FeFETs) have been considered as a promising artificial synaptic device for implementation of neuromorphic computing systems. However, an inevitable problem, interface traps at the 2D semiconductor/ferroelectric oxide interface, suppresses ferroelectric characteristics, and causes a critical degradation on the performance of 2D-based FeFETs. Here, hysteresis modulation method using self-assembly monolayer (SAM) material for interface trap passivation on 2D-based FeFET is presented. Through effectively passivation of interface traps by SAM layer, the hysteresis of the proposed device changes from interface traps-dependent to polarization-dependent direction. The reduction of interface trap density is clearly confirmed through the result of calculation using the subthreshold swing of the device. Furthermore, excellent optic-neural synaptic characteristics are successfully implemeted, including linear and symmetric potentiation and depression, and multilevel conductance. This work identifies the potential of passivation effect for 2D-based FeFETs to accelerate the development of neuromorphic computing systems.
AB - 2D semiconductor-based ferroelectric field effect transistors (FeFETs) have been considered as a promising artificial synaptic device for implementation of neuromorphic computing systems. However, an inevitable problem, interface traps at the 2D semiconductor/ferroelectric oxide interface, suppresses ferroelectric characteristics, and causes a critical degradation on the performance of 2D-based FeFETs. Here, hysteresis modulation method using self-assembly monolayer (SAM) material for interface trap passivation on 2D-based FeFET is presented. Through effectively passivation of interface traps by SAM layer, the hysteresis of the proposed device changes from interface traps-dependent to polarization-dependent direction. The reduction of interface trap density is clearly confirmed through the result of calculation using the subthreshold swing of the device. Furthermore, excellent optic-neural synaptic characteristics are successfully implemeted, including linear and symmetric potentiation and depression, and multilevel conductance. This work identifies the potential of passivation effect for 2D-based FeFETs to accelerate the development of neuromorphic computing systems.
KW - 2D materials
KW - 2D-based ferroelectric field effect transistors
KW - HfO-based ferroelectric materials
KW - optic-neural synapses
KW - passivation effects
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U2 - 10.1002/smll.202004371
DO - 10.1002/smll.202004371
M3 - Article
AN - SCOPUS:85097032923
VL - 16
JO - Small
JF - Small
SN - 1613-6810
IS - 49
M1 - 2004371
ER -