I-V characteristics of a vertical single Ni nanowire by voltage-applied atomic force microscopy

D. S. Choi, Y. Rheem, B. Yoo, N. V. Myung, Young-geun Kim

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We report the measurement of the electrical resistivity of a vertical single Ni nanowire. A vertical array of Ni nanowires was fabricated on a Si substrate by electrodeposition using a nanoporous alumina template. The Ni nanowires possessed a face-centered-cubic polycrystalline structure. A voltage-applied atomic force microscope was used to make a nanometer-scale point contact on top of the vertical grown single Ni nanowire. The measured resistance was 1.1 MΩ for a nanowire with length of 3 μm and diameter of 20 nm.

Original languageEnglish
Pages (from-to)1037-1040
Number of pages4
JournalCurrent Applied Physics
Volume10
Issue number4
DOIs
Publication statusPublished - 2010 Jul 1

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Keywords

  • Electrical resistance
  • Single Ni nanowire
  • Voltage-applied atomic force microscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

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