I-V characteristics of quantum dots and rings in a magnetic field

Effect of single-electron charging and discharging

Sung Ryul Yang, G. C. Aers

Research output: Contribution to journalArticle

Abstract

We have theoretically investigated the non-linear I-V characteristics of small quantum dots and rings in a magnetic field where single electron charging and discharging are significant. We find that, for both charging and discharging situations, three types of current steps can occur in the I-V characteristics representing three different types of tunneling events. Physically transparent descriptions are given of the tunneling events that give rise to these steps. Also we present a suggestion to use the magnetic field dependence of the step structures in I-V characteristics to map out directly the energy levels of dots and rings.

Original languageEnglish
Pages (from-to)501-504
Number of pages4
JournalSolid State Communications
Volume82
Issue number7
Publication statusPublished - 1992 May 1
Externally publishedYes

Fingerprint

Magnetic field effects
Semiconductor quantum dots
charging
quantum dots
Magnetic fields
Electrons
rings
magnetic fields
Electron energy levels
electrons
suggestion
energy levels

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

I-V characteristics of quantum dots and rings in a magnetic field : Effect of single-electron charging and discharging. / Yang, Sung Ryul; Aers, G. C.

In: Solid State Communications, Vol. 82, No. 7, 01.05.1992, p. 501-504.

Research output: Contribution to journalArticle

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