Abstract
A methodology for identifying essential magnetoresistive parameters of spin valves is presented. The method uses a formulation of the magnetoresistance of a magnetic layer that incorporates the magnetic and transport properties of the device in a phenomenological way. Experimental data are used in conjuction with the formulation to obtain magnetoresistive parameters. The method is shown to accurately characterize a set of NiFe/Cu/NiFe spin-valve devices.
| Original language | English |
|---|---|
| Pages (from-to) | 4609-4611 |
| Number of pages | 3 |
| Journal | IEEE Transactions on Magnetics |
| Volume | 32 |
| Issue number | 5 PART 2 |
| DOIs | |
| Publication status | Published - 1996 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Cite this
Oti, J. O., Kim, Y. K., & Shand, P. M. (1996). Identifying phenomenological magnetoresistive properties of spin valves. IEEE Transactions on Magnetics, 32(5 PART 2), 4609-4611. https://doi.org/10.1109/20.539094