Identifying phenomenological magnetoresistive properties of spin valves

J. O. Oti; Y. K. Kim; P. M. Shand

doi:10.1109/20.539094

Identifying phenomenological magnetoresistive properties of spin valves

J. O. Oti, Y. K. Kim, P. M. Shand

Research output: Contribution to journal › Article › peer-review

Abstract

A methodology for identifying essential magnetoresistive parameters of spin valves is presented. The method uses a formulation of the magnetoresistance of a magnetic layer that incorporates the magnetic and transport properties of the device in a phenomenological way. Experimental data are used in conjuction with the formulation to obtain magnetoresistive parameters. The method is shown to accurately characterize a set of NiFe/Cu/NiFe spin-valve devices.

Original language	English
Pages (from-to)	4609-4611
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	32
Issue number	5 PART 2
DOIs	https://doi.org/10.1109/20.539094
Publication status	Published - 1996
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/20.539094

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abstract = "A methodology for identifying essential magnetoresistive parameters of spin valves is presented. The method uses a formulation of the magnetoresistance of a magnetic layer that incorporates the magnetic and transport properties of the device in a phenomenological way. Experimental data are used in conjuction with the formulation to obtain magnetoresistive parameters. The method is shown to accurately characterize a set of NiFe/Cu/NiFe spin-valve devices.",

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