Abstract
A methodology for identifying essential magnetoresistive parameters of spin valves is presented. The method uses a formulation of the magnetoresistance of a magnetic layer that incorporates the magnetic and transport properties of the device in a phenomenological way. Experimental data are used in conjuction with the formulation to obtain magnetoresistive parameters. The method is shown to accurately characterize a set of NiFe/Cu/NiFe spin-valve devices.
| Original language | English |
|---|---|
| Pages (from-to) | 4609-4611 |
| Number of pages | 3 |
| Journal | IEEE Transactions on Magnetics |
| Volume | 32 |
| Issue number | 5 PART 2 |
| DOIs | |
| Publication status | Published - 1996 Dec 1 |
| Externally published | Yes |
Fingerprint
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)
Cite this
Identifying phenomenological magnetoresistive properties of spin valves. / Oti, J. O.; Kim, Young-geun; Shand, P. M.
In: IEEE Transactions on Magnetics, Vol. 32, No. 5 PART 2, 01.12.1996, p. 4609-4611.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Identifying phenomenological magnetoresistive properties of spin valves
AU - Oti, J. O.
AU - Kim, Young-geun
AU - Shand, P. M.
PY - 1996/12/1
Y1 - 1996/12/1
N2 - A methodology for identifying essential magnetoresistive parameters of spin valves is presented. The method uses a formulation of the magnetoresistance of a magnetic layer that incorporates the magnetic and transport properties of the device in a phenomenological way. Experimental data are used in conjuction with the formulation to obtain magnetoresistive parameters. The method is shown to accurately characterize a set of NiFe/Cu/NiFe spin-valve devices.
AB - A methodology for identifying essential magnetoresistive parameters of spin valves is presented. The method uses a formulation of the magnetoresistance of a magnetic layer that incorporates the magnetic and transport properties of the device in a phenomenological way. Experimental data are used in conjuction with the formulation to obtain magnetoresistive parameters. The method is shown to accurately characterize a set of NiFe/Cu/NiFe spin-valve devices.
UR - http://www.scopus.com/inward/record.url?scp=0030246223&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0030246223&partnerID=8YFLogxK
U2 - 10.1109/20.539094
DO - 10.1109/20.539094
M3 - Article
AN - SCOPUS:0030246223
VL - 32
SP - 4609
EP - 4611
JO - IEEE Transactions on Magnetics
JF - IEEE Transactions on Magnetics
SN - 0018-9464
IS - 5 PART 2
ER -