Identifying phenomenological magnetoresistive properties of spin valves

J. O. Oti, Young-geun Kim, P. M. Shand

Research output: Contribution to journalArticle

Abstract

A methodology for identifying essential magnetoresistive parameters of spin valves is presented. The method uses a formulation of the magnetoresistance of a magnetic layer that incorporates the magnetic and transport properties of the device in a phenomenological way. Experimental data are used in conjuction with the formulation to obtain magnetoresistive parameters. The method is shown to accurately characterize a set of NiFe/Cu/NiFe spin-valve devices.

Original languageEnglish
Pages (from-to)4609-4611
Number of pages3
JournalIEEE Transactions on Magnetics
Volume32
Issue number5 PART 2
DOIs
Publication statusPublished - 1996 Dec 1
Externally publishedYes

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Magnetoresistance
Transport properties
Magnetic properties
formulations
transport properties
methodology
magnetic properties

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Identifying phenomenological magnetoresistive properties of spin valves. / Oti, J. O.; Kim, Young-geun; Shand, P. M.

In: IEEE Transactions on Magnetics, Vol. 32, No. 5 PART 2, 01.12.1996, p. 4609-4611.

Research output: Contribution to journalArticle

Oti, J. O. ; Kim, Young-geun ; Shand, P. M. / Identifying phenomenological magnetoresistive properties of spin valves. In: IEEE Transactions on Magnetics. 1996 ; Vol. 32, No. 5 PART 2. pp. 4609-4611.
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