Identifying phenomenological magnetoresistive properties of spin valves

J. O. Oti, Y. K. Kim, P. M. Shand

Research output: Contribution to journalArticle

Abstract

A methodology for identifying essential magnetoresistive parameters of spin valves is presented. The method uses a formulation of the magnetoresistance of a magnetic layer that incorporates the magnetic and transport properties of the device in a phenomenological way. Experimental data are used in conjuction with the formulation to obtain magnetoresistive parameters. The method is shown to accurately characterize a set of NiFe/Cu/NiFe spin-valve devices.

Original languageEnglish
Pages (from-to)4609-4611
Number of pages3
JournalIEEE Transactions on Magnetics
Volume32
Issue number5 PART 2
DOIs
Publication statusPublished - 1996

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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