Identifying phenomenological magnetoresistive properties of spin valves

J. O. Oti; Y. K. Kim; P. M. Shand

doi:10.1109/20.539094

Identifying phenomenological magnetoresistive properties of spin valves

J. O. Oti, Y. K. Kim, P. M. Shand

Research output: Contribution to journal › Article › peer-review

Abstract

A methodology for identifying essential magnetoresistive parameters of spin valves is presented. The method uses a formulation of the magnetoresistance of a magnetic layer that incorporates the magnetic and transport properties of the device in a phenomenological way. Experimental data are used in conjuction with the formulation to obtain magnetoresistive parameters. The method is shown to accurately characterize a set of NiFe/Cu/NiFe spin-valve devices.

Original language	English
Pages (from-to)	4609-4611
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	32
Issue number	5 PART 2
DOIs	https://doi.org/10.1109/20.539094
Publication status	Published - 1996
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/20.539094

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@article{7ac7fa98026b441595e86a1d205453a3,

title = "Identifying phenomenological magnetoresistive properties of spin valves",

abstract = "A methodology for identifying essential magnetoresistive parameters of spin valves is presented. The method uses a formulation of the magnetoresistance of a magnetic layer that incorporates the magnetic and transport properties of the device in a phenomenological way. Experimental data are used in conjuction with the formulation to obtain magnetoresistive parameters. The method is shown to accurately characterize a set of NiFe/Cu/NiFe spin-valve devices.",

author = "Oti, {J. O.} and Kim, {Y. K.} and Shand, {P. M.}",

year = "1996",

doi = "10.1109/20.539094",

language = "English",

volume = "32",

pages = "4609--4611",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5 PART 2",

}

TY - JOUR

T1 - Identifying phenomenological magnetoresistive properties of spin valves

AU - Oti, J. O.

AU - Kim, Y. K.

AU - Shand, P. M.

PY - 1996

Y1 - 1996

N2 - A methodology for identifying essential magnetoresistive parameters of spin valves is presented. The method uses a formulation of the magnetoresistance of a magnetic layer that incorporates the magnetic and transport properties of the device in a phenomenological way. Experimental data are used in conjuction with the formulation to obtain magnetoresistive parameters. The method is shown to accurately characterize a set of NiFe/Cu/NiFe spin-valve devices.

AB - A methodology for identifying essential magnetoresistive parameters of spin valves is presented. The method uses a formulation of the magnetoresistance of a magnetic layer that incorporates the magnetic and transport properties of the device in a phenomenological way. Experimental data are used in conjuction with the formulation to obtain magnetoresistive parameters. The method is shown to accurately characterize a set of NiFe/Cu/NiFe spin-valve devices.

UR - http://www.scopus.com/inward/record.url?scp=0030246223&partnerID=8YFLogxK

U2 - 10.1109/20.539094

DO - 10.1109/20.539094

M3 - Article

AN - SCOPUS:0030246223

VL - 32

SP - 4609

EP - 4611

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

SN - 0018-9464

IS - 5 PART 2

ER -

Identifying phenomenological magnetoresistive properties of spin valves

Abstract

ASJC Scopus subject areas

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