A methodology for identifying essential magnetoresistive parameters of spin valves is presented. The method uses a formulation of the magnetoresistance of a magnetic layer that incorporates the magnetic and transport properties of the device in a phenomenological way. Experimental data are used in conjuction with the formulation to obtain magnetoresistive parameters. The method is shown to accurately characterize a set of NiFe/Cu/NiFe spin-valve devices.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering