III-Nitride Nanowires as Building Blocks for Advanced Light Emitting Diodes

Alexander Y. Polyakov, Taehwan Kim, In-Hwan Lee, Stephen J. Pearton

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

This article presents a discussion on the role of nanowire (NW) structures, prepared by reactive ion etching (RIE), in planar III-nitride light emitting diodes (LEDs) for increasing the functionality, improving the crystalline quality, enhancing the quantum efficiency of radiative recombination, and improving the light extraction efficiency. The methods of NW fabrication by RIE, of suppressing the adverse effects of RIE-related damage, and of incorporating air voids into the NWs are also discussed. Furthermore, metal nanoparticles producing localized surface plasmons and semiconductor quantum dots downconverting the wavelength of light emitted by LEDs are explored.

Original languageEnglish
Article number1800589
JournalPhysica Status Solidi (B) Basic Research
Volume256
Issue number5
DOIs
Publication statusPublished - 2019 May 1

Fingerprint

Reactive ion etching
Nitrides
Nanowires
nitrides
Light emitting diodes
nanowires
light emitting diodes
etching
ions
Plasmons
Metal nanoparticles
radiative recombination
Quantum efficiency
plasmons
Semiconductor quantum dots
quantum efficiency
voids
quantum dots
Crystalline materials
damage

Keywords

  • III-nitrides
  • light emitting diodes
  • nanowires

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

III-Nitride Nanowires as Building Blocks for Advanced Light Emitting Diodes. / Polyakov, Alexander Y.; Kim, Taehwan; Lee, In-Hwan; Pearton, Stephen J.

In: Physica Status Solidi (B) Basic Research, Vol. 256, No. 5, 1800589, 01.05.2019.

Research output: Contribution to journalArticle

Polyakov, Alexander Y. ; Kim, Taehwan ; Lee, In-Hwan ; Pearton, Stephen J. / III-Nitride Nanowires as Building Blocks for Advanced Light Emitting Diodes. In: Physica Status Solidi (B) Basic Research. 2019 ; Vol. 256, No. 5.
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