Abstract
This article presents a discussion on the role of nanowire (NW) structures, prepared by reactive ion etching (RIE), in planar III-nitride light emitting diodes (LEDs) for increasing the functionality, improving the crystalline quality, enhancing the quantum efficiency of radiative recombination, and improving the light extraction efficiency. The methods of NW fabrication by RIE, of suppressing the adverse effects of RIE-related damage, and of incorporating air voids into the NWs are also discussed. Furthermore, metal nanoparticles producing localized surface plasmons and semiconductor quantum dots downconverting the wavelength of light emitted by LEDs are explored.
| Original language | English |
|---|---|
| Article number | 1800589 |
| Journal | Physica Status Solidi (B) Basic Research |
| Volume | 256 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2019 May 1 |
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Keywords
- III-nitrides
- light emitting diodes
- nanowires
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
III-Nitride Nanowires as Building Blocks for Advanced Light Emitting Diodes. / Polyakov, Alexander Y.; Kim, Taehwan; Lee, In-Hwan; Pearton, Stephen J.
In: Physica Status Solidi (B) Basic Research, Vol. 256, No. 5, 1800589, 01.05.2019.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - III-Nitride Nanowires as Building Blocks for Advanced Light Emitting Diodes
AU - Polyakov, Alexander Y.
AU - Kim, Taehwan
AU - Lee, In-Hwan
AU - Pearton, Stephen J.
PY - 2019/5/1
Y1 - 2019/5/1
N2 - This article presents a discussion on the role of nanowire (NW) structures, prepared by reactive ion etching (RIE), in planar III-nitride light emitting diodes (LEDs) for increasing the functionality, improving the crystalline quality, enhancing the quantum efficiency of radiative recombination, and improving the light extraction efficiency. The methods of NW fabrication by RIE, of suppressing the adverse effects of RIE-related damage, and of incorporating air voids into the NWs are also discussed. Furthermore, metal nanoparticles producing localized surface plasmons and semiconductor quantum dots downconverting the wavelength of light emitted by LEDs are explored.
AB - This article presents a discussion on the role of nanowire (NW) structures, prepared by reactive ion etching (RIE), in planar III-nitride light emitting diodes (LEDs) for increasing the functionality, improving the crystalline quality, enhancing the quantum efficiency of radiative recombination, and improving the light extraction efficiency. The methods of NW fabrication by RIE, of suppressing the adverse effects of RIE-related damage, and of incorporating air voids into the NWs are also discussed. Furthermore, metal nanoparticles producing localized surface plasmons and semiconductor quantum dots downconverting the wavelength of light emitted by LEDs are explored.
KW - III-nitrides
KW - light emitting diodes
KW - nanowires
UR - http://www.scopus.com/inward/record.url?scp=85065466988&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85065466988&partnerID=8YFLogxK
U2 - 10.1002/pssb.201800589
DO - 10.1002/pssb.201800589
M3 - Article
AN - SCOPUS:85065466988
VL - 256
JO - Physica Status Solidi (B): Basic Research
JF - Physica Status Solidi (B): Basic Research
SN - 0370-1972
IS - 5
M1 - 1800589
ER -