III-Nitride Nanowires as Building Blocks for Advanced Light Emitting Diodes

Alexander Y. Polyakov; Taehwan Kim; In-Hwan Lee; Stephen J. Pearton

doi:10.1002/pssb.201800589

III-Nitride Nanowires as Building Blocks for Advanced Light Emitting Diodes

Alexander Y. Polyakov, Taehwan Kim, In-Hwan Lee, Stephen J. Pearton

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

This article presents a discussion on the role of nanowire (NW) structures, prepared by reactive ion etching (RIE), in planar III-nitride light emitting diodes (LEDs) for increasing the functionality, improving the crystalline quality, enhancing the quantum efficiency of radiative recombination, and improving the light extraction efficiency. The methods of NW fabrication by RIE, of suppressing the adverse effects of RIE-related damage, and of incorporating air voids into the NWs are also discussed. Furthermore, metal nanoparticles producing localized surface plasmons and semiconductor quantum dots downconverting the wavelength of light emitted by LEDs are explored.

Original language	English
Article number	1800589
Journal	Physica Status Solidi (B) Basic Research
Volume	256
Issue number	5
DOIs	https://doi.org/10.1002/pssb.201800589
Publication status	Published - 2019 May 1

Keywords

III-nitrides
light emitting diodes
nanowires

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/pssb.201800589

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Polyakov, A. Y., Kim, T., Lee, I-H., & Pearton, S. J. (2019). III-Nitride Nanowires as Building Blocks for Advanced Light Emitting Diodes. Physica Status Solidi (B) Basic Research, 256(5), [1800589]. https://doi.org/10.1002/pssb.201800589

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