Two kinds of III-V-N related quantum structures grown on GaAs are proposed, which have the capability to emit in the 1.5 μm wavelength range. GaAsNSe is a new quaternary with high residual electron concentrations. It is shown that GaAsNSe/GaAs superlattices, with structural optimisation, give bright luminescence around 1.5 μm at room temperature. A second structure is InAs quantum dots (QDs) grown on (001) GaAs. Instead of a conventional GaAs capping layer, a GaNAs strain-compensating layer (SCL) is proposed to minimise net compressive strain induced by InAs QDs. The application of a GaNAs SCL to cap InAs QDs improves the homogeneity and optical quality of the InAs QDs by the compensation of net strain. It is shown that 1.5 μm emission from InAs QDs is made possible by increasing the N composition in the GaNAs SCL.
|Number of pages||4|
|Journal||IEE Proceedings: Optoelectronics|
|Publication status||Published - 2003 Feb|
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Computer Networks and Communications
- Electrical and Electronic Engineering