III-V-N-related quantum structures for 1.5μm emission

I. Suemune; K. Uesugi; S. Ganapathy; X. Q. Zhang; M. Kurimoto; B. J. Kim; T. Y. Seong; H. Machida; N. Shimoyama

doi:10.1049/ip-opt:20030037

III-V-N-related quantum structures for 1.5μm emission

I. Suemune, K. Uesugi, S. Ganapathy, X. Q. Zhang, M. Kurimoto, B. J. Kim, T. Y. Seong, H. Machida, N. Shimoyama

Research output: Contribution to journal › Article › peer-review

Abstract

Two kinds of III-V-N related quantum structures grown on GaAs are proposed, which have the capability to emit in the 1.5 μm wavelength range. GaAsNSe is a new quaternary with high residual electron concentrations. It is shown that GaAsNSe/GaAs superlattices, with structural optimisation, give bright luminescence around 1.5 μm at room temperature. A second structure is InAs quantum dots (QDs) grown on (001) GaAs. Instead of a conventional GaAs capping layer, a GaNAs strain-compensating layer (SCL) is proposed to minimise net compressive strain induced by InAs QDs. The application of a GaNAs SCL to cap InAs QDs improves the homogeneity and optical quality of the InAs QDs by the compensation of net strain. It is shown that 1.5 μm emission from InAs QDs is made possible by increasing the N composition in the GaNAs SCL.

Original language	English
Pages (from-to)	52-55
Number of pages	4
Journal	IEE Proceedings: Optoelectronics
Volume	150
Issue number	1
DOIs	https://doi.org/10.1049/ip-opt:20030037
Publication status	Published - 2003 Feb
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Computer Networks and Communications
Electrical and Electronic Engineering

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10.1049/ip-opt:20030037

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title = "III-V-N-related quantum structures for 1.5μm emission",

abstract = "Two kinds of III-V-N related quantum structures grown on GaAs are proposed, which have the capability to emit in the 1.5 μm wavelength range. GaAsNSe is a new quaternary with high residual electron concentrations. It is shown that GaAsNSe/GaAs superlattices, with structural optimisation, give bright luminescence around 1.5 μm at room temperature. A second structure is InAs quantum dots (QDs) grown on (001) GaAs. Instead of a conventional GaAs capping layer, a GaNAs strain-compensating layer (SCL) is proposed to minimise net compressive strain induced by InAs QDs. The application of a GaNAs SCL to cap InAs QDs improves the homogeneity and optical quality of the InAs QDs by the compensation of net strain. It is shown that 1.5 μm emission from InAs QDs is made possible by increasing the N composition in the GaNAs SCL.",

author = "I. Suemune and K. Uesugi and S. Ganapathy and Zhang, {X. Q.} and M. Kurimoto and Kim, {B. J.} and Seong, {T. Y.} and H. Machida and N. Shimoyama",

year = "2003",

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doi = "10.1049/ip-opt:20030037",

language = "English",

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pages = "52--55",

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T1 - III-V-N-related quantum structures for 1.5μm emission

AU - Suemune, I.

AU - Uesugi, K.

AU - Ganapathy, S.

AU - Zhang, X. Q.

AU - Kurimoto, M.

AU - Kim, B. J.

AU - Seong, T. Y.

AU - Machida, H.

AU - Shimoyama, N.

PY - 2003/2

Y1 - 2003/2

N2 - Two kinds of III-V-N related quantum structures grown on GaAs are proposed, which have the capability to emit in the 1.5 μm wavelength range. GaAsNSe is a new quaternary with high residual electron concentrations. It is shown that GaAsNSe/GaAs superlattices, with structural optimisation, give bright luminescence around 1.5 μm at room temperature. A second structure is InAs quantum dots (QDs) grown on (001) GaAs. Instead of a conventional GaAs capping layer, a GaNAs strain-compensating layer (SCL) is proposed to minimise net compressive strain induced by InAs QDs. The application of a GaNAs SCL to cap InAs QDs improves the homogeneity and optical quality of the InAs QDs by the compensation of net strain. It is shown that 1.5 μm emission from InAs QDs is made possible by increasing the N composition in the GaNAs SCL.

AB - Two kinds of III-V-N related quantum structures grown on GaAs are proposed, which have the capability to emit in the 1.5 μm wavelength range. GaAsNSe is a new quaternary with high residual electron concentrations. It is shown that GaAsNSe/GaAs superlattices, with structural optimisation, give bright luminescence around 1.5 μm at room temperature. A second structure is InAs quantum dots (QDs) grown on (001) GaAs. Instead of a conventional GaAs capping layer, a GaNAs strain-compensating layer (SCL) is proposed to minimise net compressive strain induced by InAs QDs. The application of a GaNAs SCL to cap InAs QDs improves the homogeneity and optical quality of the InAs QDs by the compensation of net strain. It is shown that 1.5 μm emission from InAs QDs is made possible by increasing the N composition in the GaNAs SCL.

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DO - 10.1049/ip-opt:20030037

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SN - 1350-2433

VL - 150

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EP - 55

JO - IEE Proceedings: Optoelectronics

JF - IEE Proceedings: Optoelectronics

IS - 1

ER -

III-V-N-related quantum structures for 1.5μm emission

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