Impact-Ionization and Tunneling FET Characteristics of Dual-Functional Devices with Partially Covered Intrinsic Regions

Minsuk Kim, Youngin Jeon, Yoonjoong Kim, Sangsig Kim

Research output: Contribution to journalArticle

8 Citations (Scopus)


Dual-functional devices based on gated p-i-n diodes are proposed in this simulation study. The dual-functional devices function not only as n-channel tunneling field-effect transistors (n-TFETs) but also as p-channel impact-ionization FETs (p-IFETs), depending on the bias conditions. In this study, the I-V characteristics, subthreshold swing (SS), ON/OFF current ratio ( Ion/Ioff), and band diagram are analyzed using a device simulator (Silvaco Atlas), and the features of the n-TFETs and the p-IFETs are extracted from the simulated data. The n-TFETs exhibit high Ion/Ioff} of ∼1011 and a sub-60-mV/dec SS, and the p-IFETs yield extremely low SS of as small as 8.57 mV/dec. Our approach is one of the useful methods to design multifunctional electronics for lowering the power consumption.

Original languageEnglish
Article number7097725
Pages (from-to)633-637
Number of pages5
JournalIEEE Transactions on Nanotechnology
Issue number4
Publication statusPublished - 2015 Jul 1



  • dual function
  • impact ionization
  • integration
  • sub-60 mV/dec
  • tunneling

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering

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