Impact ionization and tunneling operations in charge-plasma dopingless device

Minsuk Kim, Yoonjoong Kim, Doohyeok Lim, Sola Woo, Kyeungmin Im, Jinsun Cho, Hyungu Kang, Sangsig Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In this paper, we present the impact ionization and tunneling operations in a newly designed dopingless device. Our proposed device functions selectively-as either a p-channel impact-ionization MOSFET (p-IMOS) or an n-channel tunneling field-effect transistor (n-TFET)-according to the bias conditions. To realize the dopingless device, the charge-plasma effect is employed to induce n- or p-type regions without any doping process, by choosing an electrode metal with an appropriate work function. The band diagrams, I-V characteristics, subthreshold swings (SS), and carrier-concentration profiles of the device under the p-IMOS and n-TFET operation modes are analyzed in our study, using a commercial device simulator. The device yields an extremely low SS of 0.53 mV/dec under the p-IMOS operation mode. It also exhibits a low off-current of approximately 10-14 A/μm and a high I ON/I OFF of approximately 108, under the n-TFET operation mode.

Original languageEnglish
JournalSuperlattices and Microstructures
DOIs
Publication statusAccepted/In press - 2017

Fingerprint

Plasma devices
Impact ionization
field effect transistors
Field effect transistors
ionization
Carrier concentration
Simulators
Metals
Doping (additives)
Plasmas
Electrodes
simulators
diagrams
electrodes
profiles
metals

Keywords

  • Charge-plasma effect
  • Dopingless
  • Dual functionality
  • Impact ionization
  • Tunneling

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Impact ionization and tunneling operations in charge-plasma dopingless device. / Kim, Minsuk; Kim, Yoonjoong; Lim, Doohyeok; Woo, Sola; Im, Kyeungmin; Cho, Jinsun; Kang, Hyungu; Kim, Sangsig.

In: Superlattices and Microstructures, 2017.

Research output: Contribution to journalArticle

Kim, Minsuk ; Kim, Yoonjoong ; Lim, Doohyeok ; Woo, Sola ; Im, Kyeungmin ; Cho, Jinsun ; Kang, Hyungu ; Kim, Sangsig. / Impact ionization and tunneling operations in charge-plasma dopingless device. In: Superlattices and Microstructures. 2017.
@article{5f46387f862c43cda5c6d68774db87cf,
title = "Impact ionization and tunneling operations in charge-plasma dopingless device",
abstract = "In this paper, we present the impact ionization and tunneling operations in a newly designed dopingless device. Our proposed device functions selectively-as either a p-channel impact-ionization MOSFET (p-IMOS) or an n-channel tunneling field-effect transistor (n-TFET)-according to the bias conditions. To realize the dopingless device, the charge-plasma effect is employed to induce n- or p-type regions without any doping process, by choosing an electrode metal with an appropriate work function. The band diagrams, I-V characteristics, subthreshold swings (SS), and carrier-concentration profiles of the device under the p-IMOS and n-TFET operation modes are analyzed in our study, using a commercial device simulator. The device yields an extremely low SS of 0.53 mV/dec under the p-IMOS operation mode. It also exhibits a low off-current of approximately 10-14 A/μm and a high I ON/I OFF of approximately 108, under the n-TFET operation mode.",
keywords = "Charge-plasma effect, Dopingless, Dual functionality, Impact ionization, Tunneling",
author = "Minsuk Kim and Yoonjoong Kim and Doohyeok Lim and Sola Woo and Kyeungmin Im and Jinsun Cho and Hyungu Kang and Sangsig Kim",
year = "2017",
doi = "10.1016/j.spmi.2017.07.041",
language = "English",
journal = "Superlattices and Microstructures",
issn = "0749-6036",
publisher = "Academic Press Inc.",

}

TY - JOUR

T1 - Impact ionization and tunneling operations in charge-plasma dopingless device

AU - Kim, Minsuk

AU - Kim, Yoonjoong

AU - Lim, Doohyeok

AU - Woo, Sola

AU - Im, Kyeungmin

AU - Cho, Jinsun

AU - Kang, Hyungu

AU - Kim, Sangsig

PY - 2017

Y1 - 2017

N2 - In this paper, we present the impact ionization and tunneling operations in a newly designed dopingless device. Our proposed device functions selectively-as either a p-channel impact-ionization MOSFET (p-IMOS) or an n-channel tunneling field-effect transistor (n-TFET)-according to the bias conditions. To realize the dopingless device, the charge-plasma effect is employed to induce n- or p-type regions without any doping process, by choosing an electrode metal with an appropriate work function. The band diagrams, I-V characteristics, subthreshold swings (SS), and carrier-concentration profiles of the device under the p-IMOS and n-TFET operation modes are analyzed in our study, using a commercial device simulator. The device yields an extremely low SS of 0.53 mV/dec under the p-IMOS operation mode. It also exhibits a low off-current of approximately 10-14 A/μm and a high I ON/I OFF of approximately 108, under the n-TFET operation mode.

AB - In this paper, we present the impact ionization and tunneling operations in a newly designed dopingless device. Our proposed device functions selectively-as either a p-channel impact-ionization MOSFET (p-IMOS) or an n-channel tunneling field-effect transistor (n-TFET)-according to the bias conditions. To realize the dopingless device, the charge-plasma effect is employed to induce n- or p-type regions without any doping process, by choosing an electrode metal with an appropriate work function. The band diagrams, I-V characteristics, subthreshold swings (SS), and carrier-concentration profiles of the device under the p-IMOS and n-TFET operation modes are analyzed in our study, using a commercial device simulator. The device yields an extremely low SS of 0.53 mV/dec under the p-IMOS operation mode. It also exhibits a low off-current of approximately 10-14 A/μm and a high I ON/I OFF of approximately 108, under the n-TFET operation mode.

KW - Charge-plasma effect

KW - Dopingless

KW - Dual functionality

KW - Impact ionization

KW - Tunneling

UR - http://www.scopus.com/inward/record.url?scp=85025168627&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85025168627&partnerID=8YFLogxK

U2 - 10.1016/j.spmi.2017.07.041

DO - 10.1016/j.spmi.2017.07.041

M3 - Article

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

ER -