Impact of Buffer Layer Process and Na on Shunt Paths of Monolithic Series-connected CIGSSe Thin Film Solar Cells

Chan Bin Mo; Se Jin Park; Soohyun Bae; Mi hwa Lim; Junggyu Nam; Dongseop Kim; Jung Yup Yang; Dongchul Suh; Byoung Koun Min; Donghwan Kim; Yoonmook Kang; Young Su Kim; Hae seok Lee

doi:10.1038/s41598-019-38945-5

Impact of Buffer Layer Process and Na on Shunt Paths of Monolithic Series-connected CIGSSe Thin Film Solar Cells

Chan Bin Mo, Se Jin Park, Soohyun Bae, Mi hwa Lim, Junggyu Nam, Dongseop Kim, Jung Yup Yang, Dongchul Suh, Byoung Koun Min, Donghwan Kim, Yoonmook Kang, Young Su Kim, Hae seok Lee

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Abstract

The illuminated current-voltage characteristics of Cu(In,Ga)(S,Se) ₂ (CIGSSe) thin film solar cells fabricated using two different buffer layer processes: chemical bath deposition (CBD) and atomic layer deposition (ALD) were investigated. The CIGSSe solar cell with the ALD buffer showed comparable conversion efficiency to the CIGSSe solar cell with CBD buffer but lower shunt resistance even though it showed lower point shunt defect density as measured in electroluminescence. The shunt paths were investigated in detail by capturing the high-resolution dark lock-in thermography images, resolving the shunt resistance contributions of the scribing patterns (P1, P3), and depth profiling of the constituent elements. It was found that the concentration of Na from the soda-lime glass substrate played a key role in controlling the shunt paths. In the ALD process, Na segregated at the surface of CIGSSe and contributed to the increase in the shunt current through P1 and P3, resulting in a reduction in the fill factor of the CIGSSe solar cells.

Original language	English
Article number	3666
Journal	Scientific reports
Volume	9
Issue number	1
DOIs	https://doi.org/10.1038/s41598-019-38945-5
Publication status	Published - 2019 Dec 1

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@article{96b221b55ff54215b50b96369a78a9da,

title = "Impact of Buffer Layer Process and Na on Shunt Paths of Monolithic Series-connected CIGSSe Thin Film Solar Cells",

abstract = " The illuminated current-voltage characteristics of Cu(In,Ga)(S,Se) 2 (CIGSSe) thin film solar cells fabricated using two different buffer layer processes: chemical bath deposition (CBD) and atomic layer deposition (ALD) were investigated. The CIGSSe solar cell with the ALD buffer showed comparable conversion efficiency to the CIGSSe solar cell with CBD buffer but lower shunt resistance even though it showed lower point shunt defect density as measured in electroluminescence. The shunt paths were investigated in detail by capturing the high-resolution dark lock-in thermography images, resolving the shunt resistance contributions of the scribing patterns (P1, P3), and depth profiling of the constituent elements. It was found that the concentration of Na from the soda-lime glass substrate played a key role in controlling the shunt paths. In the ALD process, Na segregated at the surface of CIGSSe and contributed to the increase in the shunt current through P1 and P3, resulting in a reduction in the fill factor of the CIGSSe solar cells.",

author = "{Bin Mo}, Chan and Park, {Se Jin} and Soohyun Bae and Lim, {Mi hwa} and Junggyu Nam and Dongseop Kim and Yang, {Jung Yup} and Dongchul Suh and Min, {Byoung Koun} and Donghwan Kim and Yoonmook Kang and Kim, {Young Su} and Lee, {Hae seok}",

note = "Funding Information: This work was conducted under the framework of the Research and Development Program of the Korea Institute of Energy Research (KIER) (B7-2421). This work was supported by the New & Renewable Energy Core Technology Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and a financial grant from the Ministry of Trade, Industry & Energy, Republic of Korea (20163010012570). This work was also supported by the KU-KIST Graduate School Project. Publisher Copyright: {\textcopyright} 2019, The Author(s).",

year = "2019",

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doi = "10.1038/s41598-019-38945-5",

language = "English",

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T1 - Impact of Buffer Layer Process and Na on Shunt Paths of Monolithic Series-connected CIGSSe Thin Film Solar Cells

AU - Bin Mo, Chan

AU - Park, Se Jin

AU - Bae, Soohyun

AU - Lim, Mi hwa

AU - Nam, Junggyu

AU - Kim, Dongseop

AU - Yang, Jung Yup

AU - Suh, Dongchul

AU - Min, Byoung Koun

AU - Kim, Donghwan

AU - Kang, Yoonmook

AU - Kim, Young Su

AU - Lee, Hae seok

N1 - Funding Information: This work was conducted under the framework of the Research and Development Program of the Korea Institute of Energy Research (KIER) (B7-2421). This work was supported by the New & Renewable Energy Core Technology Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and a financial grant from the Ministry of Trade, Industry & Energy, Republic of Korea (20163010012570). This work was also supported by the KU-KIST Graduate School Project. Publisher Copyright: © 2019, The Author(s).

PY - 2019/12/1

Y1 - 2019/12/1

N2 - The illuminated current-voltage characteristics of Cu(In,Ga)(S,Se) 2 (CIGSSe) thin film solar cells fabricated using two different buffer layer processes: chemical bath deposition (CBD) and atomic layer deposition (ALD) were investigated. The CIGSSe solar cell with the ALD buffer showed comparable conversion efficiency to the CIGSSe solar cell with CBD buffer but lower shunt resistance even though it showed lower point shunt defect density as measured in electroluminescence. The shunt paths were investigated in detail by capturing the high-resolution dark lock-in thermography images, resolving the shunt resistance contributions of the scribing patterns (P1, P3), and depth profiling of the constituent elements. It was found that the concentration of Na from the soda-lime glass substrate played a key role in controlling the shunt paths. In the ALD process, Na segregated at the surface of CIGSSe and contributed to the increase in the shunt current through P1 and P3, resulting in a reduction in the fill factor of the CIGSSe solar cells.

AB - The illuminated current-voltage characteristics of Cu(In,Ga)(S,Se) 2 (CIGSSe) thin film solar cells fabricated using two different buffer layer processes: chemical bath deposition (CBD) and atomic layer deposition (ALD) were investigated. The CIGSSe solar cell with the ALD buffer showed comparable conversion efficiency to the CIGSSe solar cell with CBD buffer but lower shunt resistance even though it showed lower point shunt defect density as measured in electroluminescence. The shunt paths were investigated in detail by capturing the high-resolution dark lock-in thermography images, resolving the shunt resistance contributions of the scribing patterns (P1, P3), and depth profiling of the constituent elements. It was found that the concentration of Na from the soda-lime glass substrate played a key role in controlling the shunt paths. In the ALD process, Na segregated at the surface of CIGSSe and contributed to the increase in the shunt current through P1 and P3, resulting in a reduction in the fill factor of the CIGSSe solar cells.

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Impact of Buffer Layer Process and Na on Shunt Paths of Monolithic Series-connected CIGSSe Thin Film Solar Cells

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