Impact of fin shapes and channel doping concentrations on the operation of junctionless transistors

So Jeong Park, Dae Young Jeon, Gyu-Tae Kim

Research output: Contribution to journalArticle

Abstract

The influence of variations in the Si fin shape on the electrical properties of junctionless transistors (JLTs) was investigated through two-dimensional Poisson equation numerical simulations at different doping concentrations. Stronger gate coupling in a triangular fin channel was observed, arising from suppression of the variation in the conduction threshold voltage with increasing doping concentration, compared to JLTs with rectangular fin channels. The potential distribution in the channel cross-section shows a less varied potential at the bottom of a triangular channel than at the bottom of a rectangular channel, and supports the result that triangular channels are less sensitive to variations in channel doping concentration.

Original languageEnglish
Pages (from-to)50-54
Number of pages5
JournalMicroelectronic Engineering
Volume207
DOIs
Publication statusPublished - 2019 Feb 15

Fingerprint

fins
Transistors
transistors
Doping (additives)
Poisson equation
Threshold voltage
Electric properties
Computer simulation
threshold voltage
electrical properties
retarding
conduction
cross sections
simulation

Keywords

  • 2D numerical simulation
  • Channel doping concentration
  • Fin cross-section shape
  • Junctionless transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Impact of fin shapes and channel doping concentrations on the operation of junctionless transistors. / Park, So Jeong; Jeon, Dae Young; Kim, Gyu-Tae.

In: Microelectronic Engineering, Vol. 207, 15.02.2019, p. 50-54.

Research output: Contribution to journalArticle

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