TY - JOUR
T1 - Impact of fin shapes and channel doping concentrations on the operation of junctionless transistors
AU - Park, So Jeong
AU - Jeon, Dae Young
AU - Kim, Gyu Tae
N1 - Funding Information:
This work was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2016R1A6A3A11933511, NRF-2017M3A7B4049167), the Future Semiconductor Device Technology Development Program (10067739) funded by Ministry of Trade, Industry & Energy (MOTIE), Korea Semiconductor Research Consortium (KSRC), the Korea Institute of Science and Technology (KIST) Institutional Program and a Korea University Grant.
Funding Information:
This work was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education ( 2016R1A6A3A11933511 , NRF-2017M3A7B4049167 ), the Future Semiconductor Device Technology Development Program ( 10067739 ) funded by Ministry of Trade, Industry & Energy (MOTIE) , Korea Semiconductor Research Consortium (KSRC) , the Korea Institute of Science and Technology (KIST) Institutional Program and a Korea University Grant.
PY - 2019/2/15
Y1 - 2019/2/15
N2 - The influence of variations in the Si fin shape on the electrical properties of junctionless transistors (JLTs) was investigated through two-dimensional Poisson equation numerical simulations at different doping concentrations. Stronger gate coupling in a triangular fin channel was observed, arising from suppression of the variation in the conduction threshold voltage with increasing doping concentration, compared to JLTs with rectangular fin channels. The potential distribution in the channel cross-section shows a less varied potential at the bottom of a triangular channel than at the bottom of a rectangular channel, and supports the result that triangular channels are less sensitive to variations in channel doping concentration.
AB - The influence of variations in the Si fin shape on the electrical properties of junctionless transistors (JLTs) was investigated through two-dimensional Poisson equation numerical simulations at different doping concentrations. Stronger gate coupling in a triangular fin channel was observed, arising from suppression of the variation in the conduction threshold voltage with increasing doping concentration, compared to JLTs with rectangular fin channels. The potential distribution in the channel cross-section shows a less varied potential at the bottom of a triangular channel than at the bottom of a rectangular channel, and supports the result that triangular channels are less sensitive to variations in channel doping concentration.
KW - 2D numerical simulation
KW - Channel doping concentration
KW - Fin cross-section shape
KW - Junctionless transistor
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U2 - 10.1016/j.mee.2019.01.003
DO - 10.1016/j.mee.2019.01.003
M3 - Article
AN - SCOPUS:85061209821
VL - 207
SP - 50
EP - 54
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
ER -