Impact of metal nitrides on contact resistivity of metal-interlayer-semiconductor source/drain in sub-14 nm n-type Si FinFET

Juhan Ahn, Jeong Kyu Kim, Jong-Kook Kim, Jinok Kim, Jin Hong Park, Hyun-Yong Yu

Research output: Contribution to journalArticle

1 Citation (Scopus)


In this work, a metal nitride interlayer semiconductor (MN-I-S) source/drain (S/D) model is suggested to investigate the effect of titanium nitride (TiN) and tantalum nitride (TaN) on the specific contact resistivity (£c) of an MN-I-S S/D structure in a sub-14 nm n-type Si FinFET. The work function (WF) variation of TiN and TaN was considered based on a Rayleigh distribution. In this model, an undoped interlayer (undoped-IL) or heavily doped interlayer (n+-IL) were included to identify the effect of IL doping on £c. The structure with an n+-IL provides a very low variation in £c as well as lower £c values (i.e., ∼4×10-9 ω· cm2). By using three-dimensional technology computer-aided design (TCAD) simulation, we also investigated the impact of £c variation on device performance. The MN-I-S S/D with an n+-IL showed a higher on-state drive current with highly suppressed variation.

Original languageEnglish
Pages (from-to)3084-3088
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Issue number5
Publication statusPublished - 2017



  • FinFET
  • Specific Contact Resistivity
  • Tantalum Nitride
  • Titanium Nitride
  • Variation
  • Zinc Oxide

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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