Impact of metal nitrides on contact resistivity of metal-interlayer-semiconductor source/drain in sub-14 nm n-type Si FinFET

Juhan Ahn, Jeong Kyu Kim, Jong-Kook Kim, Jinok Kim, Jin Hong Park, Hyun-Yong Yu

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this work, a metal nitride interlayer semiconductor (MN-I-S) source/drain (S/D) model is suggested to investigate the effect of titanium nitride (TiN) and tantalum nitride (TaN) on the specific contact resistivity (£c) of an MN-I-S S/D structure in a sub-14 nm n-type Si FinFET. The work function (WF) variation of TiN and TaN was considered based on a Rayleigh distribution. In this model, an undoped interlayer (undoped-IL) or heavily doped interlayer (n+-IL) were included to identify the effect of IL doping on £c. The structure with an n+-IL provides a very low variation in £c as well as lower £c values (i.e., ∼4×10-9 ω· cm2). By using three-dimensional technology computer-aided design (TCAD) simulation, we also investigated the impact of £c variation on device performance. The MN-I-S S/D with an n+-IL showed a higher on-state drive current with highly suppressed variation.

Original languageEnglish
Pages (from-to)3084-3088
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume17
Issue number5
DOIs
Publication statusPublished - 2017

Fingerprint

metal nitrides
Semiconductors
Nitrides
Tantalum
electric contacts
interlayers
Metals
Semiconductor materials
electrical resistivity
tantalum nitrides
Titanium nitride
metals
titanium nitrides
Computer-Aided Design
Rayleigh distribution
Technology
Equipment and Supplies
computer aided design
Computer aided design
Doping (additives)

Keywords

  • FinFET
  • Specific Contact Resistivity
  • Tantalum Nitride
  • Titanium Nitride
  • Variation
  • Zinc Oxide

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Impact of metal nitrides on contact resistivity of metal-interlayer-semiconductor source/drain in sub-14 nm n-type Si FinFET. / Ahn, Juhan; Kim, Jeong Kyu; Kim, Jong-Kook; Kim, Jinok; Park, Jin Hong; Yu, Hyun-Yong.

In: Journal of Nanoscience and Nanotechnology, Vol. 17, No. 5, 2017, p. 3084-3088.

Research output: Contribution to journalArticle

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