Impact of porosity on the structural and optoelectronic properties of nanoporous GaN double layer fabricated via combined electrochemical and photoelectrochemical etching

Hoki Son, Periyayya Uthirakumar, A. Y. Polyakov, Jae Hong Park, Kang Hyun Lee, In Hwan Lee

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Nanoporous GaN double layer structures with porosity ranging from 10% to 60% are fabricated via a combined electrochemical etching and photoelectrochemical etching process. The porosity as well as the variation in the size and shape of the nanopores are controlled by regulating the applied voltage in the etching process. With the increase in the porosity, the biaxial stress and reflectance index of the nanoporous GaN double layer decrease from 0.74 GPa and 2.4 to 0.42 GPa and 2.0, respectively. Furthermore, the photoluminescence intensity of the InGaN/GaN multi-quantum wells grown on the nanoporous GaN is approximately three times higher than that on the as-grown reference GaN. The enhanced photoluminescence intensity can be attributed to the porosity controlled through the incorporated nanopores, which increase the light extraction efficiency. The light generated in the active layer is further extracted due to scattering by the nanopores.

Original languageEnglish
Article number153248
JournalApplied Surface Science
Volume592
DOIs
Publication statusPublished - 2022 Aug 1

Keywords

  • Electrochemical etching
  • Nanoporous GaN
  • Photoelectrochemical etching
  • Refractive index

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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