Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors

Lu Liu, Camilo Velez Cuervo, Yuyin Xi, Fan Ren, Stephen J. Pearton, Hong Yeol Kim, Ji Hyun Kim, Ivan I. Kravchenko

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

The effects of high energy proton irradiation dose on dc performance as well as critical voltage of the drain-voltage step-stress of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated to evaluate the feasibility of AlGaN/GaN HEMTs for space applications, which need to stand a variety of irradiations. The HEMTs were irradiated with protons at a fixed energy of 5 MeV and doses ranging from 109 to 2×10 14cm-2. For the dc characteristics, there was only minimal degradation of saturation drain current (IDSS), transconductance (gm), electron mobility, and sheet carrier concentration at doses below 2×1013cm-2, while the reduction of these parameters were 15%, 9%, 41% and 16.6%, respectively, at a dose of 2×1014cm-2. At this same dose condition, increases of 37% in drain breakdown voltage (VBR) and of 45% in critical voltage (Vcri) were observed. The improvements of drain breakdown voltage and critical voltage were attributed to the modification of the depletion region due to the introduction of a higher density of defects after irradiation at a higher dose.

Original languageEnglish
Article number042202
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume31
Issue number4
DOIs
Publication statusPublished - 2013 Jul 1

Fingerprint

Proton irradiation
proton irradiation
High electron mobility transistors
high electron mobility transistors
dosage
Electric potential
Electric breakdown
Dosimetry
Irradiation
electric potential
electrical faults
Electron mobility
Drain current
Space applications
Transconductance
Carrier concentration
Protons
irradiation
transconductance
electron mobility

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors. / Liu, Lu; Velez Cuervo, Camilo; Xi, Yuyin; Ren, Fan; Pearton, Stephen J.; Kim, Hong Yeol; Kim, Ji Hyun; Kravchenko, Ivan I.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 31, No. 4, 042202, 01.07.2013.

Research output: Contribution to journalArticle

Liu, Lu ; Velez Cuervo, Camilo ; Xi, Yuyin ; Ren, Fan ; Pearton, Stephen J. ; Kim, Hong Yeol ; Kim, Ji Hyun ; Kravchenko, Ivan I. / Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2013 ; Vol. 31, No. 4.
@article{6692968f037d47aa81775e096576ff85,
title = "Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors",
abstract = "The effects of high energy proton irradiation dose on dc performance as well as critical voltage of the drain-voltage step-stress of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated to evaluate the feasibility of AlGaN/GaN HEMTs for space applications, which need to stand a variety of irradiations. The HEMTs were irradiated with protons at a fixed energy of 5 MeV and doses ranging from 109 to 2×10 14cm-2. For the dc characteristics, there was only minimal degradation of saturation drain current (IDSS), transconductance (gm), electron mobility, and sheet carrier concentration at doses below 2×1013cm-2, while the reduction of these parameters were 15{\%}, 9{\%}, 41{\%} and 16.6{\%}, respectively, at a dose of 2×1014cm-2. At this same dose condition, increases of 37{\%} in drain breakdown voltage (VBR) and of 45{\%} in critical voltage (Vcri) were observed. The improvements of drain breakdown voltage and critical voltage were attributed to the modification of the depletion region due to the introduction of a higher density of defects after irradiation at a higher dose.",
author = "Lu Liu and {Velez Cuervo}, Camilo and Yuyin Xi and Fan Ren and Pearton, {Stephen J.} and Kim, {Hong Yeol} and Kim, {Ji Hyun} and Kravchenko, {Ivan I.}",
year = "2013",
month = "7",
day = "1",
doi = "10.1116/1.4813785",
language = "English",
volume = "31",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "4",

}

TY - JOUR

T1 - Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors

AU - Liu, Lu

AU - Velez Cuervo, Camilo

AU - Xi, Yuyin

AU - Ren, Fan

AU - Pearton, Stephen J.

AU - Kim, Hong Yeol

AU - Kim, Ji Hyun

AU - Kravchenko, Ivan I.

PY - 2013/7/1

Y1 - 2013/7/1

N2 - The effects of high energy proton irradiation dose on dc performance as well as critical voltage of the drain-voltage step-stress of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated to evaluate the feasibility of AlGaN/GaN HEMTs for space applications, which need to stand a variety of irradiations. The HEMTs were irradiated with protons at a fixed energy of 5 MeV and doses ranging from 109 to 2×10 14cm-2. For the dc characteristics, there was only minimal degradation of saturation drain current (IDSS), transconductance (gm), electron mobility, and sheet carrier concentration at doses below 2×1013cm-2, while the reduction of these parameters were 15%, 9%, 41% and 16.6%, respectively, at a dose of 2×1014cm-2. At this same dose condition, increases of 37% in drain breakdown voltage (VBR) and of 45% in critical voltage (Vcri) were observed. The improvements of drain breakdown voltage and critical voltage were attributed to the modification of the depletion region due to the introduction of a higher density of defects after irradiation at a higher dose.

AB - The effects of high energy proton irradiation dose on dc performance as well as critical voltage of the drain-voltage step-stress of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated to evaluate the feasibility of AlGaN/GaN HEMTs for space applications, which need to stand a variety of irradiations. The HEMTs were irradiated with protons at a fixed energy of 5 MeV and doses ranging from 109 to 2×10 14cm-2. For the dc characteristics, there was only minimal degradation of saturation drain current (IDSS), transconductance (gm), electron mobility, and sheet carrier concentration at doses below 2×1013cm-2, while the reduction of these parameters were 15%, 9%, 41% and 16.6%, respectively, at a dose of 2×1014cm-2. At this same dose condition, increases of 37% in drain breakdown voltage (VBR) and of 45% in critical voltage (Vcri) were observed. The improvements of drain breakdown voltage and critical voltage were attributed to the modification of the depletion region due to the introduction of a higher density of defects after irradiation at a higher dose.

UR - http://www.scopus.com/inward/record.url?scp=84887430578&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84887430578&partnerID=8YFLogxK

U2 - 10.1116/1.4813785

DO - 10.1116/1.4813785

M3 - Article

VL - 31

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 4

M1 - 042202

ER -