Impact of Random Dopant Fluctuation on n-Type Ge Junctionless FinFETs with Metal-Interlayer-Semiconductor Source/Drain Contact Structure

Seung Geun Jung, Hyun Yong Yu

Research output: Contribution to journalArticle

Abstract

The impact of random dopant fluctuation (RDF) on n-type Ge junctionless FinFETs (JLFETs) with metal-interlayer-semiconductor (MIS) source/drain (S/D) contact structure is firstly investigated via 3-D technology computer aided design (TCAD) simulations. The estimation and evaluation of standard deviations in threshold voltage (Vth), on-state current (Ion), off-state current (Ioff), subthreshold swing (SS), and drain induced barrier lowering (DIBL) by different Ge nanowire doping concentrations and different heights for RDF effects are performed. The results show a decreasing trend of RDF with lower doping concentration of the device. Furthermore, the influence of MIS S/D on RDF of n-type Ge JLFET is assessed through a comparative analysis between an n-type Ge JLFETs with and without MIS S/D structure. The analysis results estimate that MIS S/D can reduce performance variation to approximately 0.0237 V for σ Vth, 5.75 × 10-5 A/μm for σ Ion, 4.30 × 10-10 A/μm for σ Ioff, 0.548 mV/dec for σ SS, and 12.3 mV/V for DIBL, without severe performance degradation of the current nominal values. This estimation gives a significant insight on variability prediction of the 7 nm n-type Ge JLFET device with MIS S/D structure.

Original languageEnglish
Article number8883266
Pages (from-to)1119-1124
Number of pages6
JournalIEEE Journal of the Electron Devices Society
Volume7
DOIs
Publication statusPublished - 2019 Jan 1

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Semiconductors
Metals
Doping (additives)
Semiconductor materials
Ions
Nanowires
Computer-Aided Design
Equipment and Supplies
Threshold voltage
FinFET
Computer aided design
Technology
Degradation

Keywords

  • 3-D TCAD
  • germanium
  • Junctionless FET
  • line-edge roughness (LER)
  • metal-inter layer-semiconductor source/drain
  • random dopant fluctuation (RDF)

ASJC Scopus subject areas

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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title = "Impact of Random Dopant Fluctuation on n-Type Ge Junctionless FinFETs with Metal-Interlayer-Semiconductor Source/Drain Contact Structure",
abstract = "The impact of random dopant fluctuation (RDF) on n-type Ge junctionless FinFETs (JLFETs) with metal-interlayer-semiconductor (MIS) source/drain (S/D) contact structure is firstly investigated via 3-D technology computer aided design (TCAD) simulations. The estimation and evaluation of standard deviations in threshold voltage (Vth), on-state current (Ion), off-state current (Ioff), subthreshold swing (SS), and drain induced barrier lowering (DIBL) by different Ge nanowire doping concentrations and different heights for RDF effects are performed. The results show a decreasing trend of RDF with lower doping concentration of the device. Furthermore, the influence of MIS S/D on RDF of n-type Ge JLFET is assessed through a comparative analysis between an n-type Ge JLFETs with and without MIS S/D structure. The analysis results estimate that MIS S/D can reduce performance variation to approximately 0.0237 V for σ Vth, 5.75 × 10-5 A/μm for σ Ion, 4.30 × 10-10 A/μm for σ Ioff, 0.548 mV/dec for σ SS, and 12.3 mV/V for DIBL, without severe performance degradation of the current nominal values. This estimation gives a significant insight on variability prediction of the 7 nm n-type Ge JLFET device with MIS S/D structure.",
keywords = "3-D TCAD, germanium, Junctionless FET, line-edge roughness (LER), metal-inter layer-semiconductor source/drain, random dopant fluctuation (RDF)",
author = "Jung, {Seung Geun} and Yu, {Hyun Yong}",
year = "2019",
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AB - The impact of random dopant fluctuation (RDF) on n-type Ge junctionless FinFETs (JLFETs) with metal-interlayer-semiconductor (MIS) source/drain (S/D) contact structure is firstly investigated via 3-D technology computer aided design (TCAD) simulations. The estimation and evaluation of standard deviations in threshold voltage (Vth), on-state current (Ion), off-state current (Ioff), subthreshold swing (SS), and drain induced barrier lowering (DIBL) by different Ge nanowire doping concentrations and different heights for RDF effects are performed. The results show a decreasing trend of RDF with lower doping concentration of the device. Furthermore, the influence of MIS S/D on RDF of n-type Ge JLFET is assessed through a comparative analysis between an n-type Ge JLFETs with and without MIS S/D structure. The analysis results estimate that MIS S/D can reduce performance variation to approximately 0.0237 V for σ Vth, 5.75 × 10-5 A/μm for σ Ion, 4.30 × 10-10 A/μm for σ Ioff, 0.548 mV/dec for σ SS, and 12.3 mV/V for DIBL, without severe performance degradation of the current nominal values. This estimation gives a significant insight on variability prediction of the 7 nm n-type Ge JLFET device with MIS S/D structure.

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