TY - JOUR
T1 - Impact of Random Dopant Fluctuation on n-Type Ge Junctionless FinFETs with Metal-Interlayer-Semiconductor Source/Drain Contact Structure
AU - Jung, Seung Geun
AU - Yu, Hyun Yong
N1 - Funding Information:
This work was supported in part by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT, and Future Planning under Grant 2017R1A2B4006460, in part by the Nano Material Technology Development Program through NRF funded by the Ministry of Science, ICT and Future Planning under Grant 2015M3A7B7045490, in part by the Ministry of Trade, Industry & Energy, under Project 20003551, and in part by the Korea Semiconductor Research Consortium Support Program for the Development of the Future Semiconductor Device.
Publisher Copyright:
© 2013 IEEE.
PY - 2019
Y1 - 2019
N2 - The impact of random dopant fluctuation (RDF) on n-type Ge junctionless FinFETs (JLFETs) with metal-interlayer-semiconductor (MIS) source/drain (S/D) contact structure is firstly investigated via 3-D technology computer aided design (TCAD) simulations. The estimation and evaluation of standard deviations in threshold voltage (Vth), on-state current (Ion), off-state current (Ioff), subthreshold swing (SS), and drain induced barrier lowering (DIBL) by different Ge nanowire doping concentrations and different heights for RDF effects are performed. The results show a decreasing trend of RDF with lower doping concentration of the device. Furthermore, the influence of MIS S/D on RDF of n-type Ge JLFET is assessed through a comparative analysis between an n-type Ge JLFETs with and without MIS S/D structure. The analysis results estimate that MIS S/D can reduce performance variation to approximately 0.0237 V for σ Vth, 5.75 × 10-5 A/μm for σ Ion, 4.30 × 10-10 A/μm for σ Ioff, 0.548 mV/dec for σ SS, and 12.3 mV/V for DIBL, without severe performance degradation of the current nominal values. This estimation gives a significant insight on variability prediction of the 7 nm n-type Ge JLFET device with MIS S/D structure.
AB - The impact of random dopant fluctuation (RDF) on n-type Ge junctionless FinFETs (JLFETs) with metal-interlayer-semiconductor (MIS) source/drain (S/D) contact structure is firstly investigated via 3-D technology computer aided design (TCAD) simulations. The estimation and evaluation of standard deviations in threshold voltage (Vth), on-state current (Ion), off-state current (Ioff), subthreshold swing (SS), and drain induced barrier lowering (DIBL) by different Ge nanowire doping concentrations and different heights for RDF effects are performed. The results show a decreasing trend of RDF with lower doping concentration of the device. Furthermore, the influence of MIS S/D on RDF of n-type Ge JLFET is assessed through a comparative analysis between an n-type Ge JLFETs with and without MIS S/D structure. The analysis results estimate that MIS S/D can reduce performance variation to approximately 0.0237 V for σ Vth, 5.75 × 10-5 A/μm for σ Ion, 4.30 × 10-10 A/μm for σ Ioff, 0.548 mV/dec for σ SS, and 12.3 mV/V for DIBL, without severe performance degradation of the current nominal values. This estimation gives a significant insight on variability prediction of the 7 nm n-type Ge JLFET device with MIS S/D structure.
KW - 3-D TCAD
KW - Junctionless FET
KW - germanium
KW - line-edge roughness (LER)
KW - metal-inter layer-semiconductor source/drain
KW - random dopant fluctuation (RDF)
UR - http://www.scopus.com/inward/record.url?scp=85074540316&partnerID=8YFLogxK
U2 - 10.1109/JEDS.2019.2949566
DO - 10.1109/JEDS.2019.2949566
M3 - Article
AN - SCOPUS:85074540316
VL - 7
SP - 1119
EP - 1124
JO - IEEE Journal of the Electron Devices Society
JF - IEEE Journal of the Electron Devices Society
SN - 2168-6734
M1 - 8883266
ER -