Abstract
The impact of random dopant fluctuation (RDF) on n-type Ge junctionless FinFETs (JLFETs) with metal-interlayer-semiconductor (MIS) source/drain (S/D) contact structure is firstly investigated via 3-D technology computer aided design (TCAD) simulations. The estimation and evaluation of standard deviations in threshold voltage (Vth), on-state current (Ion), off-state current (Ioff), subthreshold swing (SS), and drain induced barrier lowering (DIBL) by different Ge nanowire doping concentrations and different heights for RDF effects are performed. The results show a decreasing trend of RDF with lower doping concentration of the device. Furthermore, the influence of MIS S/D on RDF of n-type Ge JLFET is assessed through a comparative analysis between an n-type Ge JLFETs with and without MIS S/D structure. The analysis results estimate that MIS S/D can reduce performance variation to approximately 0.0237 V for σ Vth, 5.75 × 10-5 A/μm for σ Ion, 4.30 × 10-10 A/μm for σ Ioff, 0.548 mV/dec for σ SS, and 12.3 mV/V for DIBL, without severe performance degradation of the current nominal values. This estimation gives a significant insight on variability prediction of the 7 nm n-type Ge JLFET device with MIS S/D structure.
| Original language | English |
|---|---|
| Article number | 8883266 |
| Pages (from-to) | 1119-1124 |
| Number of pages | 6 |
| Journal | IEEE Journal of the Electron Devices Society |
| Volume | 7 |
| DOIs | |
| Publication status | Published - 2019 Jan 1 |
Fingerprint
Keywords
- 3-D TCAD
- germanium
- Junctionless FET
- line-edge roughness (LER)
- metal-inter layer-semiconductor source/drain
- random dopant fluctuation (RDF)
ASJC Scopus subject areas
- Biotechnology
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Cite this
Impact of Random Dopant Fluctuation on n-Type Ge Junctionless FinFETs with Metal-Interlayer-Semiconductor Source/Drain Contact Structure. / Jung, Seung Geun; Yu, Hyun Yong.
In: IEEE Journal of the Electron Devices Society, Vol. 7, 8883266, 01.01.2019, p. 1119-1124.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Impact of Random Dopant Fluctuation on n-Type Ge Junctionless FinFETs with Metal-Interlayer-Semiconductor Source/Drain Contact Structure
AU - Jung, Seung Geun
AU - Yu, Hyun Yong
PY - 2019/1/1
Y1 - 2019/1/1
N2 - The impact of random dopant fluctuation (RDF) on n-type Ge junctionless FinFETs (JLFETs) with metal-interlayer-semiconductor (MIS) source/drain (S/D) contact structure is firstly investigated via 3-D technology computer aided design (TCAD) simulations. The estimation and evaluation of standard deviations in threshold voltage (Vth), on-state current (Ion), off-state current (Ioff), subthreshold swing (SS), and drain induced barrier lowering (DIBL) by different Ge nanowire doping concentrations and different heights for RDF effects are performed. The results show a decreasing trend of RDF with lower doping concentration of the device. Furthermore, the influence of MIS S/D on RDF of n-type Ge JLFET is assessed through a comparative analysis between an n-type Ge JLFETs with and without MIS S/D structure. The analysis results estimate that MIS S/D can reduce performance variation to approximately 0.0237 V for σ Vth, 5.75 × 10-5 A/μm for σ Ion, 4.30 × 10-10 A/μm for σ Ioff, 0.548 mV/dec for σ SS, and 12.3 mV/V for DIBL, without severe performance degradation of the current nominal values. This estimation gives a significant insight on variability prediction of the 7 nm n-type Ge JLFET device with MIS S/D structure.
AB - The impact of random dopant fluctuation (RDF) on n-type Ge junctionless FinFETs (JLFETs) with metal-interlayer-semiconductor (MIS) source/drain (S/D) contact structure is firstly investigated via 3-D technology computer aided design (TCAD) simulations. The estimation and evaluation of standard deviations in threshold voltage (Vth), on-state current (Ion), off-state current (Ioff), subthreshold swing (SS), and drain induced barrier lowering (DIBL) by different Ge nanowire doping concentrations and different heights for RDF effects are performed. The results show a decreasing trend of RDF with lower doping concentration of the device. Furthermore, the influence of MIS S/D on RDF of n-type Ge JLFET is assessed through a comparative analysis between an n-type Ge JLFETs with and without MIS S/D structure. The analysis results estimate that MIS S/D can reduce performance variation to approximately 0.0237 V for σ Vth, 5.75 × 10-5 A/μm for σ Ion, 4.30 × 10-10 A/μm for σ Ioff, 0.548 mV/dec for σ SS, and 12.3 mV/V for DIBL, without severe performance degradation of the current nominal values. This estimation gives a significant insight on variability prediction of the 7 nm n-type Ge JLFET device with MIS S/D structure.
KW - 3-D TCAD
KW - germanium
KW - Junctionless FET
KW - line-edge roughness (LER)
KW - metal-inter layer-semiconductor source/drain
KW - random dopant fluctuation (RDF)
UR - http://www.scopus.com/inward/record.url?scp=85074540316&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85074540316&partnerID=8YFLogxK
U2 - 10.1109/JEDS.2019.2949566
DO - 10.1109/JEDS.2019.2949566
M3 - Article
AN - SCOPUS:85074540316
VL - 7
SP - 1119
EP - 1124
JO - IEEE Journal of the Electron Devices Society
JF - IEEE Journal of the Electron Devices Society
SN - 2168-6734
M1 - 8883266
ER -