Impact of series resistance on the operation of junctionless transistors

Dae Young Jeon, So Jeong Park, Mireille Mouis, Sylvain Barraud, Gyu-Tae Kim, Gérard Ghibaudo

Research output: Contribution to journalArticle

16 Citations (Scopus)


Transconductance (gm) and its derivative (dgm/dVg) of junctionless transistors (JLTs), considered as a possible candidate for future CMOS technology, show their unique operation properties such as bulk neutral and surface accumulation conduction. However, source/drain series resistance (Rsd) causes significant degradation of intrinsic gm and dgm/dVg behavior in JLTs. In this letter, the Rsd effects on the operation of JLTs were investigated in detail and also verified with analytical modeling equations. This work provides helpful information for a better understanding of the operation mechanism of JLTs with de-embedded Rsd effects.

Original languageEnglish
Pages (from-to)103-107
Number of pages5
JournalSolid-State Electronics
Publication statusPublished - 2017 Mar 1


  • Analytical modeling
  • Bulk neutral conduction
  • De-embedded R effects
  • Junctionless transistors (JLTs)
  • Series resistance (R)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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