Impedance-based interfacial analysis of the LaAlO3/SrTiO3 oxide heterostructure involving a 2-dimensional electron gas layer

Chan Rok Park, Shin Ik Kim, Seon Young Moon, Yil Hwan You, Jung Hwan Seo, Seung Hyub Baek, Seong Keun Kim, Chong-Yun Kang, Jin Sang Kim, Jin Ha Hwang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The 2-dimensional electron gas (2DEG) at the LaAlO3/SrTiO3 heterointerface was analyzed using frequency-dependent impedance spectroscopy. The electrical conduction of 2DEG significantly influences the high-frequency impedance and induces dielectric amplification at low frequency regimes. The impedance responses obtained from the LaAlO3/SrTiO3 oxide was modeled using an equivalent circuit model. The frequency-dependent characterization used here does not necessitate the formation of ohmic contacts between the 2DEG layer and the adjacent electrodes. Through thermal bias-stress tests, the 2DEG conduction mechanism is proposed to partially originate from the oxygen vacancy-controlled defect concepts, indicating the controllability of 2DEG transport.

Original languageEnglish
Pages (from-to)60-66
Number of pages7
JournalJournal of Physics and Chemistry of Solids
Volume82
DOIs
Publication statusPublished - 2015
Externally publishedYes

Fingerprint

Electron gas
Oxides
electron gas
Heterojunctions
impedance
oxides
conduction
gas transport
Ohmic contacts
controllability
Oxygen vacancies
Controllability
equivalent circuits
Equivalent circuits
Amplification
electric contacts
strontium titanium oxide
Spectroscopy
low frequencies
Defects

Keywords

  • 2DEG
  • Impedance spectroscopy
  • Interface
  • LaAlO/SrTiO
  • Oxygen vacancies

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)

Cite this

Impedance-based interfacial analysis of the LaAlO3/SrTiO3 oxide heterostructure involving a 2-dimensional electron gas layer. / Park, Chan Rok; Ik Kim, Shin; Young Moon, Seon; You, Yil Hwan; Hwan Seo, Jung; Baek, Seung Hyub; Keun Kim, Seong; Kang, Chong-Yun; Kim, Jin Sang; Hwang, Jin Ha.

In: Journal of Physics and Chemistry of Solids, Vol. 82, 2015, p. 60-66.

Research output: Contribution to journalArticle

Park, CR, Ik Kim, S, Young Moon, S, You, YH, Hwan Seo, J, Baek, SH, Keun Kim, S, Kang, C-Y, Kim, JS & Hwang, JH 2015, 'Impedance-based interfacial analysis of the LaAlO3/SrTiO3 oxide heterostructure involving a 2-dimensional electron gas layer', Journal of Physics and Chemistry of Solids, vol. 82, pp. 60-66. https://doi.org/10.1016/j.jpcs.2015.03.002
Park, Chan Rok ; Ik Kim, Shin ; Young Moon, Seon ; You, Yil Hwan ; Hwan Seo, Jung ; Baek, Seung Hyub ; Keun Kim, Seong ; Kang, Chong-Yun ; Kim, Jin Sang ; Hwang, Jin Ha. / Impedance-based interfacial analysis of the LaAlO3/SrTiO3 oxide heterostructure involving a 2-dimensional electron gas layer. In: Journal of Physics and Chemistry of Solids. 2015 ; Vol. 82. pp. 60-66.
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abstract = "The 2-dimensional electron gas (2DEG) at the LaAlO3/SrTiO3 heterointerface was analyzed using frequency-dependent impedance spectroscopy. The electrical conduction of 2DEG significantly influences the high-frequency impedance and induces dielectric amplification at low frequency regimes. The impedance responses obtained from the LaAlO3/SrTiO3 oxide was modeled using an equivalent circuit model. The frequency-dependent characterization used here does not necessitate the formation of ohmic contacts between the 2DEG layer and the adjacent electrodes. Through thermal bias-stress tests, the 2DEG conduction mechanism is proposed to partially originate from the oxygen vacancy-controlled defect concepts, indicating the controllability of 2DEG transport.",
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AU - You, Yil Hwan

AU - Hwan Seo, Jung

AU - Baek, Seung Hyub

AU - Keun Kim, Seong

AU - Kang, Chong-Yun

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AU - Hwang, Jin Ha

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AB - The 2-dimensional electron gas (2DEG) at the LaAlO3/SrTiO3 heterointerface was analyzed using frequency-dependent impedance spectroscopy. The electrical conduction of 2DEG significantly influences the high-frequency impedance and induces dielectric amplification at low frequency regimes. The impedance responses obtained from the LaAlO3/SrTiO3 oxide was modeled using an equivalent circuit model. The frequency-dependent characterization used here does not necessitate the formation of ohmic contacts between the 2DEG layer and the adjacent electrodes. Through thermal bias-stress tests, the 2DEG conduction mechanism is proposed to partially originate from the oxygen vacancy-controlled defect concepts, indicating the controllability of 2DEG transport.

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