Impedance-based interfacial analysis of the LaAlO3/SrTiO3 oxide heterostructure involving a 2-dimensional electron gas layer

Chan Rok Park, Shin Ik Kim, Seon Young Moon, Yil Hwan You, Jung Hwan Seo, Seung Hyub Baek, Seong Keun Kim, Chong-Yun Kang, Jin Sang Kim, Jin Ha Hwang

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Abstract

The 2-dimensional electron gas (2DEG) at the LaAlO3/SrTiO3 heterointerface was analyzed using frequency-dependent impedance spectroscopy. The electrical conduction of 2DEG significantly influences the high-frequency impedance and induces dielectric amplification at low frequency regimes. The impedance responses obtained from the LaAlO3/SrTiO3 oxide was modeled using an equivalent circuit model. The frequency-dependent characterization used here does not necessitate the formation of ohmic contacts between the 2DEG layer and the adjacent electrodes. Through thermal bias-stress tests, the 2DEG conduction mechanism is proposed to partially originate from the oxygen vacancy-controlled defect concepts, indicating the controllability of 2DEG transport.

Original languageEnglish
Pages (from-to)60-66
Number of pages7
JournalJournal of Physics and Chemistry of Solids
Volume82
DOIs
Publication statusPublished - 2015
Externally publishedYes

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Keywords

  • 2DEG
  • Impedance spectroscopy
  • Interface
  • LaAlO/SrTiO
  • Oxygen vacancies

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)

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