Impedance-based interfacial analysis of the LaAlO3/SrTiO3 oxide heterostructure involving a 2-dimensional electron gas layer

Chan Rok Park, Shin Ik Kim, Seon Young Moon, Yil Hwan You, Jung Hwan Seo, Seung Hyub Baek, Seong Keun Kim, Chong Yun Kang, Jin Sang Kim, Jin Ha Hwang

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


The 2-dimensional electron gas (2DEG) at the LaAlO3/SrTiO3 heterointerface was analyzed using frequency-dependent impedance spectroscopy. The electrical conduction of 2DEG significantly influences the high-frequency impedance and induces dielectric amplification at low frequency regimes. The impedance responses obtained from the LaAlO3/SrTiO3 oxide was modeled using an equivalent circuit model. The frequency-dependent characterization used here does not necessitate the formation of ohmic contacts between the 2DEG layer and the adjacent electrodes. Through thermal bias-stress tests, the 2DEG conduction mechanism is proposed to partially originate from the oxygen vacancy-controlled defect concepts, indicating the controllability of 2DEG transport.

Original languageEnglish
Pages (from-to)60-66
Number of pages7
JournalJournal of Physics and Chemistry of Solids
Publication statusPublished - 2015 Jul
Externally publishedYes


  • 2DEG
  • Impedance spectroscopy
  • Interface
  • LaAlO/SrTiO
  • Oxygen vacancies

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics


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