Implantation of N-ion on sapphire substrate for GaN epilayer

Young Ju Park, Yong Suk Cho, Eui Kwan Koh, Eun Kyu Kim, Gyeungho Kim, Dong Jin Byun, Suk Ki Min

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The main goal of this work is to minimize stress fields due to the mismatch in lattice constants and thermal expansion coefficients between GaN and sapphire by using the chemical and physical changes of the sapphire (0001) substrate. Effects of N+-implanted sapphire (0001) substrate on GaN epilayer by metal organic chemical vapor deposition (MOCVD) were investigated. It is our intention to examine the possibility of employing the N+-implantation treatment of the sapphire (0001) substrate to improve the properties of GaN epilayer grown by MOCVD.

Original languageEnglish
Title of host publication2001 International Microprocesses and Nanotechnology Conference, MNC 2001
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages222-223
Number of pages2
ISBN (Print)4891140178, 9784891140175
DOIs
Publication statusPublished - 2001
EventInternational Microprocesses and Nanotechnology Conference, MNC 2001 - Shimane, Japan
Duration: 2001 Oct 312001 Nov 2

Other

OtherInternational Microprocesses and Nanotechnology Conference, MNC 2001
CountryJapan
CityShimane
Period01/10/3101/11/2

Fingerprint

Aluminum Oxide
Epilayers
Sapphire
Ion implantation
implantation
sapphire
Ions
Organic Chemicals
Organic chemicals
Substrates
metalorganic chemical vapor deposition
Chemical vapor deposition
ions
Metals
stress distribution
Lattice constants
Thermal expansion
thermal expansion
Hot Temperature
expansion

ASJC Scopus subject areas

  • Biotechnology
  • Fluid Flow and Transfer Processes
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

Cite this

Park, Y. J., Cho, Y. S., Koh, E. K., Kim, E. K., Kim, G., Byun, D. J., & Min, S. K. (2001). Implantation of N-ion on sapphire substrate for GaN epilayer. In 2001 International Microprocesses and Nanotechnology Conference, MNC 2001 (pp. 222-223). [984170] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2001.984170

Implantation of N-ion on sapphire substrate for GaN epilayer. / Park, Young Ju; Cho, Yong Suk; Koh, Eui Kwan; Kim, Eun Kyu; Kim, Gyeungho; Byun, Dong Jin; Min, Suk Ki.

2001 International Microprocesses and Nanotechnology Conference, MNC 2001. Institute of Electrical and Electronics Engineers Inc., 2001. p. 222-223 984170.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Park, YJ, Cho, YS, Koh, EK, Kim, EK, Kim, G, Byun, DJ & Min, SK 2001, Implantation of N-ion on sapphire substrate for GaN epilayer. in 2001 International Microprocesses and Nanotechnology Conference, MNC 2001., 984170, Institute of Electrical and Electronics Engineers Inc., pp. 222-223, International Microprocesses and Nanotechnology Conference, MNC 2001, Shimane, Japan, 01/10/31. https://doi.org/10.1109/IMNC.2001.984170
Park YJ, Cho YS, Koh EK, Kim EK, Kim G, Byun DJ et al. Implantation of N-ion on sapphire substrate for GaN epilayer. In 2001 International Microprocesses and Nanotechnology Conference, MNC 2001. Institute of Electrical and Electronics Engineers Inc. 2001. p. 222-223. 984170 https://doi.org/10.1109/IMNC.2001.984170
Park, Young Ju ; Cho, Yong Suk ; Koh, Eui Kwan ; Kim, Eun Kyu ; Kim, Gyeungho ; Byun, Dong Jin ; Min, Suk Ki. / Implantation of N-ion on sapphire substrate for GaN epilayer. 2001 International Microprocesses and Nanotechnology Conference, MNC 2001. Institute of Electrical and Electronics Engineers Inc., 2001. pp. 222-223
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