Implantation of N-ion on sapphire substrate for GaN epilayer

Young Ju Park, Yong Suk Cho, Eui Kwan Koh, Eun Kyu Kim, Gyeungho Kim, Dong Jin Byun, Suk Ki Min

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The main goal of this work is to minimize stress fields due to the mismatch in lattice constants and thermal expansion coefficients between GaN and sapphire by using the chemical and physical changes of the sapphire (0001) substrate. Effects of N+-implanted sapphire (0001) substrate on GaN epilayer by metal organic chemical vapor deposition (MOCVD) were investigated. It is our intention to examine the possibility of employing the N+-implantation treatment of the sapphire (0001) substrate to improve the properties of GaN epilayer grown by MOCVD.

Original languageEnglish
Title of host publication2001 International Microprocesses and Nanotechnology Conference, MNC 2001
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages222-223
Number of pages2
ISBN (Print)4891140178, 9784891140175
DOIs
Publication statusPublished - 2001
EventInternational Microprocesses and Nanotechnology Conference, MNC 2001 - Shimane, Japan
Duration: 2001 Oct 312001 Nov 2

Other

OtherInternational Microprocesses and Nanotechnology Conference, MNC 2001
CountryJapan
CityShimane
Period01/10/3101/11/2

ASJC Scopus subject areas

  • Biotechnology
  • Fluid Flow and Transfer Processes
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

Fingerprint Dive into the research topics of 'Implantation of N-ion on sapphire substrate for GaN epilayer'. Together they form a unique fingerprint.

Cite this