Implementation and Characterization of an Integrate-and-Fire Neuron Circuit Using a Silicon Nanowire Feedback Field-Effect Transistor

Sola Woo, Jinsun Cho, Doohyeok Lim, Young Soo Park, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticle

Abstract

In this article, we propose an integrate-and-fire (IF) neuron circuit using a single-gated silicon nanowire feedback field-effect transistor that utilizes a positive feedback loop. The IF operations are investigated through mixed-mode technology computer-aided design simulations. The neuron circuit composed of four component transistors (plus one capacitor) exhibits a high firing frequency of 20 kHz and low power and energy consumption of 7μW and 2.9× 10-15 J. The firing frequency and spiking voltage can be controlled through external biasing voltages. Our novel neuron circuit demonstrates a promising potential for use in spiking neural network hardware for very large-scale integration.

Original languageEnglish
Article number9108609
Pages (from-to)2995-3000
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume67
Issue number7
DOIs
Publication statusPublished - 2020 Jul

Keywords

  • Feedback field-effect transistors (FBFETs)
  • integrate-and-fire (IF) neuron
  • positive feedback loop
  • spiking neural networks (SNNs)
  • TCAD simulation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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