Improved carrier-transport properties of passivated CdMnTe crystals

K. H. Kim, G. S. Camarda, A. E. Bolotnikov, R. B. James, Jinki Hong, Sunung Kim

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

By analyzing photoconductive decay curves, we compared the surface recombination velocities of semi-insulating CdMnTe:In crystals grown by the vertical Bridgman method with or without surface passivation. Sulfur passivation effectively prevents the formation of a conductive Te oxide layer on the CdMnTe surface and reduces the surface recombination velocities by about one third. We demonstrated, from IR observations of the distribution maps of Te precipitates, that their configuration affects the anomalous photoconductive decay curves and the gamma-ray spectrum in some areas of the CdMnTe crystal. Notably, not only the size but also the spatial configuration of the Te precipitates modulates the carrier-transport properties.

Original languageEnglish
Article number093705
JournalJournal of Applied Physics
Volume105
Issue number9
DOIs
Publication statusPublished - 2009

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Improved carrier-transport properties of passivated CdMnTe crystals'. Together they form a unique fingerprint.

  • Cite this

    Kim, K. H., Camarda, G. S., Bolotnikov, A. E., James, R. B., Hong, J., & Kim, S. (2009). Improved carrier-transport properties of passivated CdMnTe crystals. Journal of Applied Physics, 105(9), [093705]. https://doi.org/10.1063/1.3121502