Improved characteristics of amorphous indium-gallium-zinc-oxide-based resistive random access memory using hydrogen post-annealing

Dae Yun Kang, Tae Ho Lee, Tae Geun Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The authors report an improvement in resistive switching (RS) characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO)-based resistive random access memory devices using hydrogen post-annealing. Because this a-IGZO thin film has oxygen off-stoichiometry in the form of deficient and excessive oxygen sites, the film properties can be improved by introducing hydrogen atoms through the annealing process. After hydrogen post-annealing, the device exhibited a stable bipolar RS, low-voltage set and reset operation, long retention (>105s), good endurance (>106 cycles), and a narrow distribution in each current state. The effect of hydrogen post-annealing is also investigated by analyzing the sample surface using X-ray photon spectroscopy and atomic force microscopy.

Original languageEnglish
Article number073105
JournalApplied Physics Letters
Volume109
Issue number7
DOIs
Publication statusPublished - 2016 Aug 15

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gallium oxides
random access memory
zinc oxides
indium
annealing
hydrogen
endurance
oxygen
low voltage
stoichiometry
hydrogen atoms
atomic force microscopy
cycles
photons
thin films
spectroscopy
x rays

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Improved characteristics of amorphous indium-gallium-zinc-oxide-based resistive random access memory using hydrogen post-annealing. / Kang, Dae Yun; Lee, Tae Ho; Kim, Tae Geun.

In: Applied Physics Letters, Vol. 109, No. 7, 073105, 15.08.2016.

Research output: Contribution to journalArticle

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