Improved contact characteristics in a single Tin-Oxide nanowire device by a selective reactive ion etching (RIE) process

Junmin Lee, Daeil Kim, Jeong Sook Ha, Gyu-Tae Kim

Research output: Contribution to journalArticle

Abstract

Although many structures based on Snû2 nanowires have been demonstrated, there is a limitation towards practical application due to the unwanted contact potential between the metal electrode and the SnO2 nanowire. This is mostly due to the presence of the native oxide layer that acts as an insulator between the metal contact and the nanowire. In this study the contact properties between Ti/Au contacts and a single SnO2 nanowire was compared to the electrical properties of a contact without the oxide layer. RIE(Reactive Ion Etching) is used to selectively remove the oxide layer from the contact area. The SnO2 nanowires were synthesized by chemical vapor deposition (CVD) and dispersed on a Si/Si3N4 substrate. The Ti/Au (20nm/100nm) electrodes were formed by e-beam lithography, e-beam evaporation and a lift-off process.

Original languageEnglish
Pages (from-to)130-133
Number of pages4
JournalTransactions of the Korean Institute of Electrical Engineers
Volume59
Issue number1
Publication statusPublished - 2010 Jan 1

Fingerprint

Reactive ion etching
Tin oxides
Nanowires
Oxides
Electrodes
Metals
Lithography
Chemical vapor deposition
Evaporation
Electric properties
Substrates

Keywords

  • Contact potential
  • Nanowire
  • Native oxide
  • RIE
  • Tin-oxide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

@article{367cd6d3f1a4416eae9d9d06f3664609,
title = "Improved contact characteristics in a single Tin-Oxide nanowire device by a selective reactive ion etching (RIE) process",
abstract = "Although many structures based on Sn{\^u}2 nanowires have been demonstrated, there is a limitation towards practical application due to the unwanted contact potential between the metal electrode and the SnO2 nanowire. This is mostly due to the presence of the native oxide layer that acts as an insulator between the metal contact and the nanowire. In this study the contact properties between Ti/Au contacts and a single SnO2 nanowire was compared to the electrical properties of a contact without the oxide layer. RIE(Reactive Ion Etching) is used to selectively remove the oxide layer from the contact area. The SnO2 nanowires were synthesized by chemical vapor deposition (CVD) and dispersed on a Si/Si3N4 substrate. The Ti/Au (20nm/100nm) electrodes were formed by e-beam lithography, e-beam evaporation and a lift-off process.",
keywords = "Contact potential, Nanowire, Native oxide, RIE, Tin-oxide",
author = "Junmin Lee and Daeil Kim and Ha, {Jeong Sook} and Gyu-Tae Kim",
year = "2010",
month = "1",
day = "1",
language = "English",
volume = "59",
pages = "130--133",
journal = "Transactions of the Korean Institute of Electrical Engineers",
issn = "1975-8359",
publisher = "Korean Institute of Electrical Engineers",
number = "1",

}

TY - JOUR

T1 - Improved contact characteristics in a single Tin-Oxide nanowire device by a selective reactive ion etching (RIE) process

AU - Lee, Junmin

AU - Kim, Daeil

AU - Ha, Jeong Sook

AU - Kim, Gyu-Tae

PY - 2010/1/1

Y1 - 2010/1/1

N2 - Although many structures based on Snû2 nanowires have been demonstrated, there is a limitation towards practical application due to the unwanted contact potential between the metal electrode and the SnO2 nanowire. This is mostly due to the presence of the native oxide layer that acts as an insulator between the metal contact and the nanowire. In this study the contact properties between Ti/Au contacts and a single SnO2 nanowire was compared to the electrical properties of a contact without the oxide layer. RIE(Reactive Ion Etching) is used to selectively remove the oxide layer from the contact area. The SnO2 nanowires were synthesized by chemical vapor deposition (CVD) and dispersed on a Si/Si3N4 substrate. The Ti/Au (20nm/100nm) electrodes were formed by e-beam lithography, e-beam evaporation and a lift-off process.

AB - Although many structures based on Snû2 nanowires have been demonstrated, there is a limitation towards practical application due to the unwanted contact potential between the metal electrode and the SnO2 nanowire. This is mostly due to the presence of the native oxide layer that acts as an insulator between the metal contact and the nanowire. In this study the contact properties between Ti/Au contacts and a single SnO2 nanowire was compared to the electrical properties of a contact without the oxide layer. RIE(Reactive Ion Etching) is used to selectively remove the oxide layer from the contact area. The SnO2 nanowires were synthesized by chemical vapor deposition (CVD) and dispersed on a Si/Si3N4 substrate. The Ti/Au (20nm/100nm) electrodes were formed by e-beam lithography, e-beam evaporation and a lift-off process.

KW - Contact potential

KW - Nanowire

KW - Native oxide

KW - RIE

KW - Tin-oxide

UR - http://www.scopus.com/inward/record.url?scp=75749148048&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=75749148048&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:75749148048

VL - 59

SP - 130

EP - 133

JO - Transactions of the Korean Institute of Electrical Engineers

JF - Transactions of the Korean Institute of Electrical Engineers

SN - 1975-8359

IS - 1

ER -