Improved crystal quality and surface morphology of non polar α-plane GaN grown on γ-plane sapphire substrates

Dong Ho Kim, Su Jin Kim, Dong Ju Chae, Ji Won Yang, Jae In Sim, Tae Geun Kim, Sung Min Hwang

Research output: Contribution to journalArticle

Abstract

In this paper, we report on the improved crystal quality and surface morphology of nonpolar aplane ([11-20]) GaN layers grown on γ-plane ([1-102]) sapphire substrates by using a metal-organic chemical vapor deposition. Both the reactor pressure and the V/III ratio were modulated using twosteps during the growth in order to optimize the growth conditions for the fully coalesced GaN layers with smooth surfaces. As a result, a root-mean-square roughness of 0.678 nm was observed with atomic-force microscopy for the nonpolar α-plane GaN, and the full-widths at half-maximum values of the omega-rocking curve were 432 and 648 arcsec from the c- and the m-direction parallel scans, respectively. The low-temperature photoluminescence spectra were also investigated to identify the origin of the improvement in the crystallinity.

Original languageEnglish
Pages (from-to)873-877
Number of pages5
JournalJournal of the Korean Physical Society
Volume58
Issue number41
DOIs
Publication statusPublished - 2011 Apr 4

Keywords

  • Crystallinity
  • GaN
  • MOCVD
  • Nonpolar
  • Surface morphology

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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