Abstract
In this paper, we report on the improved crystal quality and surface morphology of nonpolar aplane ([11-20]) GaN layers grown on γ-plane ([1-102]) sapphire substrates by using a metal-organic chemical vapor deposition. Both the reactor pressure and the V/III ratio were modulated using twosteps during the growth in order to optimize the growth conditions for the fully coalesced GaN layers with smooth surfaces. As a result, a root-mean-square roughness of 0.678 nm was observed with atomic-force microscopy for the nonpolar α-plane GaN, and the full-widths at half-maximum values of the omega-rocking curve were 432 and 648 arcsec from the c- and the m-direction parallel scans, respectively. The low-temperature photoluminescence spectra were also investigated to identify the origin of the improvement in the crystallinity.
| Original language | English |
|---|---|
| Pages (from-to) | 873-877 |
| Number of pages | 5 |
| Journal | Journal of the Korean Physical Society |
| Volume | 58 |
| Issue number | 41 |
| DOIs | |
| Publication status | Published - 2011 Apr 4 |
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Keywords
- Crystallinity
- GaN
- MOCVD
- Nonpolar
- Surface morphology
ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Improved crystal quality and surface morphology of non polar α-plane GaN grown on γ-plane sapphire substrates. / Kim, Dong Ho; Kim, Su Jin; Chae, Dong Ju; Yang, Ji Won; Sim, Jae In; Kim, Tae Geun; Hwang, Sung Min.
In: Journal of the Korean Physical Society, Vol. 58, No. 41, 04.04.2011, p. 873-877.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Improved crystal quality and surface morphology of non polar α-plane GaN grown on γ-plane sapphire substrates
AU - Kim, Dong Ho
AU - Kim, Su Jin
AU - Chae, Dong Ju
AU - Yang, Ji Won
AU - Sim, Jae In
AU - Kim, Tae Geun
AU - Hwang, Sung Min
PY - 2011/4/4
Y1 - 2011/4/4
N2 - In this paper, we report on the improved crystal quality and surface morphology of nonpolar aplane ([11-20]) GaN layers grown on γ-plane ([1-102]) sapphire substrates by using a metal-organic chemical vapor deposition. Both the reactor pressure and the V/III ratio were modulated using twosteps during the growth in order to optimize the growth conditions for the fully coalesced GaN layers with smooth surfaces. As a result, a root-mean-square roughness of 0.678 nm was observed with atomic-force microscopy for the nonpolar α-plane GaN, and the full-widths at half-maximum values of the omega-rocking curve were 432 and 648 arcsec from the c- and the m-direction parallel scans, respectively. The low-temperature photoluminescence spectra were also investigated to identify the origin of the improvement in the crystallinity.
AB - In this paper, we report on the improved crystal quality and surface morphology of nonpolar aplane ([11-20]) GaN layers grown on γ-plane ([1-102]) sapphire substrates by using a metal-organic chemical vapor deposition. Both the reactor pressure and the V/III ratio were modulated using twosteps during the growth in order to optimize the growth conditions for the fully coalesced GaN layers with smooth surfaces. As a result, a root-mean-square roughness of 0.678 nm was observed with atomic-force microscopy for the nonpolar α-plane GaN, and the full-widths at half-maximum values of the omega-rocking curve were 432 and 648 arcsec from the c- and the m-direction parallel scans, respectively. The low-temperature photoluminescence spectra were also investigated to identify the origin of the improvement in the crystallinity.
KW - Crystallinity
KW - GaN
KW - MOCVD
KW - Nonpolar
KW - Surface morphology
UR - http://www.scopus.com/inward/record.url?scp=79955055334&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79955055334&partnerID=8YFLogxK
U2 - 10.3938/jkps.58.873
DO - 10.3938/jkps.58.873
M3 - Article
AN - SCOPUS:79955055334
VL - 58
SP - 873
EP - 877
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
SN - 0374-4884
IS - 41
ER -