Improved crystalline quality of GaN by substrate ion beam pre-treatment

Dong Jin Byun, Yong Suk Cho, Jaekyun Kim, Young Ju Park, Eun Kyu Kim, Gyeungho Kim, Eui Kwan Koh, Suk Ki Min

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GaN growth was carried out on Al2O3(0001) which was ion beam pre-treated to reduce the stain and dislocation density in the film. The ion dose was fixed to 1×1016 ions/cm2 and the ion energy used was 800eV and 5.5keV. The 800eV ion beam was reactive N2 + ions and the 5.5keV ion beam was from a normal ion implanter. Both ion beam pretreatments resulted in the formation of a disordered amorphous phase on the substrate surface. The GaN buffer and main growth was carried out by MOCVD,the strain was monitored using Raman spectra and dislocations were observed by TEM. The Raman shift clearly showed that the strain in the film was decreased by ion beam pre-treatment of sapphire prior to GaN deposition. The defect density in the film was reduced by up to 55% with ion beam pretreatment.

Original languageEnglish
Title of host publication2001 International Microprocesses and Nanotechnology Conference, MNC 2001
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages220-221
Number of pages2
ISBN (Print)4891140178, 9784891140175
DOIs
Publication statusPublished - 2001
EventInternational Microprocesses and Nanotechnology Conference, MNC 2001 - Shimane, Japan
Duration: 2001 Oct 312001 Nov 2

Other

OtherInternational Microprocesses and Nanotechnology Conference, MNC 2001
CountryJapan
CityShimane
Period01/10/3101/11/2

Fingerprint

pretreatment
Ion beams
ion beams
Ions
Crystalline materials
Substrates
ions
Aluminum Oxide
Defect density
Metallorganic chemical vapor deposition
Sapphire
metalorganic chemical vapor deposition
Raman scattering
Buffers
sapphire
Coloring Agents
buffers
Raman spectra
Transmission electron microscopy
dosage

Keywords

  • GaN
  • ion beam treatment
  • MOCVD
  • Raman
  • TEM
  • XPS

ASJC Scopus subject areas

  • Biotechnology
  • Fluid Flow and Transfer Processes
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

Cite this

Byun, D. J., Cho, Y. S., Kim, J., Park, Y. J., Kim, E. K., Kim, G., ... Min, S. K. (2001). Improved crystalline quality of GaN by substrate ion beam pre-treatment. In 2001 International Microprocesses and Nanotechnology Conference, MNC 2001 (pp. 220-221). [984169] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2001.984169

Improved crystalline quality of GaN by substrate ion beam pre-treatment. / Byun, Dong Jin; Cho, Yong Suk; Kim, Jaekyun; Park, Young Ju; Kim, Eun Kyu; Kim, Gyeungho; Koh, Eui Kwan; Min, Suk Ki.

2001 International Microprocesses and Nanotechnology Conference, MNC 2001. Institute of Electrical and Electronics Engineers Inc., 2001. p. 220-221 984169.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Byun, DJ, Cho, YS, Kim, J, Park, YJ, Kim, EK, Kim, G, Koh, EK & Min, SK 2001, Improved crystalline quality of GaN by substrate ion beam pre-treatment. in 2001 International Microprocesses and Nanotechnology Conference, MNC 2001., 984169, Institute of Electrical and Electronics Engineers Inc., pp. 220-221, International Microprocesses and Nanotechnology Conference, MNC 2001, Shimane, Japan, 01/10/31. https://doi.org/10.1109/IMNC.2001.984169
Byun DJ, Cho YS, Kim J, Park YJ, Kim EK, Kim G et al. Improved crystalline quality of GaN by substrate ion beam pre-treatment. In 2001 International Microprocesses and Nanotechnology Conference, MNC 2001. Institute of Electrical and Electronics Engineers Inc. 2001. p. 220-221. 984169 https://doi.org/10.1109/IMNC.2001.984169
Byun, Dong Jin ; Cho, Yong Suk ; Kim, Jaekyun ; Park, Young Ju ; Kim, Eun Kyu ; Kim, Gyeungho ; Koh, Eui Kwan ; Min, Suk Ki. / Improved crystalline quality of GaN by substrate ion beam pre-treatment. 2001 International Microprocesses and Nanotechnology Conference, MNC 2001. Institute of Electrical and Electronics Engineers Inc., 2001. pp. 220-221
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AU - Kim, Gyeungho

AU - Koh, Eui Kwan

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N2 - GaN growth was carried out on Al2O3(0001) which was ion beam pre-treated to reduce the stain and dislocation density in the film. The ion dose was fixed to 1×1016 ions/cm2 and the ion energy used was 800eV and 5.5keV. The 800eV ion beam was reactive N2 + ions and the 5.5keV ion beam was from a normal ion implanter. Both ion beam pretreatments resulted in the formation of a disordered amorphous phase on the substrate surface. The GaN buffer and main growth was carried out by MOCVD,the strain was monitored using Raman spectra and dislocations were observed by TEM. The Raman shift clearly showed that the strain in the film was decreased by ion beam pre-treatment of sapphire prior to GaN deposition. The defect density in the film was reduced by up to 55% with ion beam pretreatment.

AB - GaN growth was carried out on Al2O3(0001) which was ion beam pre-treated to reduce the stain and dislocation density in the film. The ion dose was fixed to 1×1016 ions/cm2 and the ion energy used was 800eV and 5.5keV. The 800eV ion beam was reactive N2 + ions and the 5.5keV ion beam was from a normal ion implanter. Both ion beam pretreatments resulted in the formation of a disordered amorphous phase on the substrate surface. The GaN buffer and main growth was carried out by MOCVD,the strain was monitored using Raman spectra and dislocations were observed by TEM. The Raman shift clearly showed that the strain in the film was decreased by ion beam pre-treatment of sapphire prior to GaN deposition. The defect density in the film was reduced by up to 55% with ion beam pretreatment.

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