Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation

B. Luo, R. Mehandru, Jihyun Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, D. Gotthold, R. Birkhahn, B. Peres, R. C. Fitch, N. Moser, J. K. Gillespie, G. H. Jessen, T. J. Jenkins, M. J. Yannuzi, G. D. Via, A. Crespo

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


The dc and power characteristics of AlGaN/GaN MOS-HEMTs with Sc2O3 gate dielectrics were compared with that of conventional metal-gate HEMTs fabricated on the same material. The MOS-HEMT shows higher saturated drain-source current (∼0.75 A/mm) and significantly better power-added efficiency (PAE, 27%) relative to the HEMT (∼0.6 A/mm and ∼5%). The Sc2O3 also provides effective surface passivation, with higher drain current, lower leakage currents and higher three-terminal breakdown voltage in passivated devices relative to unpassivated devices. The PAE also increases (from ∼5% to 12%) on the surface passivated HEMTs, showing that Sc2O3 is an attractive option for reducing gate and surface leakage in AlGaN/GaN heterostructure transistors.

Original languageEnglish
Pages (from-to)1781-1786
Number of pages6
JournalSolid-State Electronics
Issue number10
Publication statusPublished - 2003 Oct
Externally publishedYes


  • AlGaN/GaN
  • Power-added efficiency
  • ScO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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