Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation

B. Luo; R. Mehandru; Jihyun Kim; F. Ren; B. P. Gila; A. H. Onstine; C. R. Abernathy; S. J. Pearton; D. Gotthold; R. Birkhahn; B. Peres; R. C. Fitch; N. Moser; J. K. Gillespie; G. H. Jessen; T. J. Jenkins; M. J. Yannuzi; G. D. Via; A. Crespo

doi:10.1016/S0038-1101(03)00138-2

Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc₂O₃ gate dielectric or surface passivation

B. Luo, R. Mehandru, Jihyun Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, D. Gotthold, R. Birkhahn, B. Peres, R. C. Fitch, N. Moser, J. K. Gillespie, G. H. Jessen, T. J. Jenkins, M. J. Yannuzi, G. D. Via, A. Crespo

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The dc and power characteristics of AlGaN/GaN MOS-HEMTs with Sc₂O₃ gate dielectrics were compared with that of conventional metal-gate HEMTs fabricated on the same material. The MOS-HEMT shows higher saturated drain-source current (∼0.75 A/mm) and significantly better power-added efficiency (PAE, 27%) relative to the HEMT (∼0.6 A/mm and ∼5%). The Sc₂O₃ also provides effective surface passivation, with higher drain current, lower leakage currents and higher three-terminal breakdown voltage in passivated devices relative to unpassivated devices. The PAE also increases (from ∼5% to 12%) on the surface passivated HEMTs, showing that Sc₂O₃ is an attractive option for reducing gate and surface leakage in AlGaN/GaN heterostructure transistors.

Original language	English
Pages (from-to)	1781-1786
Number of pages	6
Journal	Solid-State Electronics
Volume	47
Issue number	10
DOIs	https://doi.org/10.1016/S0038-1101(03)00138-2
Publication status	Published - 2003 Oct
Externally published	Yes

Keywords

AlGaN/GaN
MOS-HEMT
Power-added efficiency
ScO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1016/S0038-1101(03)00138-2

Cite this

Luo, B., Mehandru, R., Kim, J., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Gotthold, D., Birkhahn, R., Peres, B., Fitch, R. C., Moser, N., Gillespie, J. K., Jessen, G. H., Jenkins, T. J., Yannuzi, M. J., Via, G. D., & Crespo, A. (2003). Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc₂O₃ gate dielectric or surface passivation. Solid-State Electronics, 47(10), 1781-1786. https://doi.org/10.1016/S0038-1101(03)00138-2

Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc₂O₃ gate dielectric or surface passivation. / Luo, B.; Mehandru, R.; Kim, Jihyun; Ren, F.; Gila, B. P.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.; Gotthold, D.; Birkhahn, R.; Peres, B.; Fitch, R. C.; Moser, N.; Gillespie, J. K.; Jessen, G. H.; Jenkins, T. J.; Yannuzi, M. J.; Via, G. D.; Crespo, A.

In: Solid-State Electronics, Vol. 47, No. 10, 10.2003, p. 1781-1786.

Research output: Contribution to journal › Article › peer-review

Luo, B, Mehandru, R, Kim, J, Ren, F, Gila, BP, Onstine, AH, Abernathy, CR, Pearton, SJ, Gotthold, D, Birkhahn, R, Peres, B, Fitch, RC, Moser, N, Gillespie, JK, Jessen, GH, Jenkins, TJ, Yannuzi, MJ, Via, GD & Crespo, A 2003, 'Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc₂O₃ gate dielectric or surface passivation', Solid-State Electronics, vol. 47, no. 10, pp. 1781-1786. https://doi.org/10.1016/S0038-1101(03)00138-2

Luo, B. ; Mehandru, R. ; Kim, Jihyun ; Ren, F. ; Gila, B. P. ; Onstine, A. H. ; Abernathy, C. R. ; Pearton, S. J. ; Gotthold, D. ; Birkhahn, R. ; Peres, B. ; Fitch, R. C. ; Moser, N. ; Gillespie, J. K. ; Jessen, G. H. ; Jenkins, T. J. ; Yannuzi, M. J. ; Via, G. D. ; Crespo, A. / Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc₂O₃ gate dielectric or surface passivation. In: Solid-State Electronics. 2003 ; Vol. 47, No. 10. pp. 1781-1786.

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title = "Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation",

abstract = "The dc and power characteristics of AlGaN/GaN MOS-HEMTs with Sc2O3 gate dielectrics were compared with that of conventional metal-gate HEMTs fabricated on the same material. The MOS-HEMT shows higher saturated drain-source current (∼0.75 A/mm) and significantly better power-added efficiency (PAE, 27%) relative to the HEMT (∼0.6 A/mm and ∼5%). The Sc2O3 also provides effective surface passivation, with higher drain current, lower leakage currents and higher three-terminal breakdown voltage in passivated devices relative to unpassivated devices. The PAE also increases (from ∼5% to 12%) on the surface passivated HEMTs, showing that Sc2O3 is an attractive option for reducing gate and surface leakage in AlGaN/GaN heterostructure transistors.",

keywords = "AlGaN/GaN, MOS-HEMT, Power-added efficiency, ScO",

author = "B. Luo and R. Mehandru and Jihyun Kim and F. Ren and Gila, {B. P.} and Onstine, {A. H.} and Abernathy, {C. R.} and Pearton, {S. J.} and D. Gotthold and R. Birkhahn and B. Peres and Fitch, {R. C.} and N. Moser and Gillespie, {J. K.} and Jessen, {G. H.} and Jenkins, {T. J.} and Yannuzi, {M. J.} and Via, {G. D.} and A. Crespo",

note = "Funding Information: The work at UF is partially supported by AFOSR (F49620-02-1-0366, G. Witt), ONR (N00014-98-1-02-04, H.B. Dietrich), and NSF DMR 0101438.",

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AU - Ren, F.

AU - Gila, B. P.

AU - Onstine, A. H.

AU - Abernathy, C. R.

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AU - Peres, B.

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AU - Moser, N.

AU - Gillespie, J. K.

AU - Jessen, G. H.

AU - Jenkins, T. J.

AU - Yannuzi, M. J.

AU - Via, G. D.

AU - Crespo, A.

N1 - Funding Information: The work at UF is partially supported by AFOSR (F49620-02-1-0366, G. Witt), ONR (N00014-98-1-02-04, H.B. Dietrich), and NSF DMR 0101438.

PY - 2003/10

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N2 - The dc and power characteristics of AlGaN/GaN MOS-HEMTs with Sc2O3 gate dielectrics were compared with that of conventional metal-gate HEMTs fabricated on the same material. The MOS-HEMT shows higher saturated drain-source current (∼0.75 A/mm) and significantly better power-added efficiency (PAE, 27%) relative to the HEMT (∼0.6 A/mm and ∼5%). The Sc2O3 also provides effective surface passivation, with higher drain current, lower leakage currents and higher three-terminal breakdown voltage in passivated devices relative to unpassivated devices. The PAE also increases (from ∼5% to 12%) on the surface passivated HEMTs, showing that Sc2O3 is an attractive option for reducing gate and surface leakage in AlGaN/GaN heterostructure transistors.

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