Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation

B. Luo, R. Mehandru, Ji Hyun Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, D. Gotthold, R. Birkhahn, B. Peres, R. C. Fitch, N. Moser, J. K. Gillespie, G. H. Jessen, T. J. Jenkins, M. J. Yannuzi, G. D. Via, A. Crespo

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The dc and power characteristics of AlGaN/GaN MOS-HEMTs with Sc2O3 gate dielectrics were compared with that of conventional metal-gate HEMTs fabricated on the same material. The MOS-HEMT shows higher saturated drain-source current (∼0.75 A/mm) and significantly better power-added efficiency (PAE, 27%) relative to the HEMT (∼0.6 A/mm and ∼5%). The Sc2O3 also provides effective surface passivation, with higher drain current, lower leakage currents and higher three-terminal breakdown voltage in passivated devices relative to unpassivated devices. The PAE also increases (from ∼5% to 12%) on the surface passivated HEMTs, showing that Sc2O3 is an attractive option for reducing gate and surface leakage in AlGaN/GaN heterostructure transistors.

Original languageEnglish
Pages (from-to)1781-1786
Number of pages6
JournalSolid-State Electronics
Volume47
Issue number10
DOIs
Publication statusPublished - 2003 Oct 1
Externally publishedYes

Fingerprint

Gate dielectrics
High electron mobility transistors
high electron mobility transistors
Passivation
passivity
leakage
Drain current
power efficiency
Electric breakdown
electrical faults
Leakage currents
high current
Heterojunctions
Transistors
transistors
Metals
aluminum gallium nitride
scandium oxide
metals

Keywords

  • AlGaN/GaN
  • MOS-HEMT
  • Power-added efficiency
  • ScO

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation. / Luo, B.; Mehandru, R.; Kim, Ji Hyun; Ren, F.; Gila, B. P.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.; Gotthold, D.; Birkhahn, R.; Peres, B.; Fitch, R. C.; Moser, N.; Gillespie, J. K.; Jessen, G. H.; Jenkins, T. J.; Yannuzi, M. J.; Via, G. D.; Crespo, A.

In: Solid-State Electronics, Vol. 47, No. 10, 01.10.2003, p. 1781-1786.

Research output: Contribution to journalArticle

Luo, B, Mehandru, R, Kim, JH, Ren, F, Gila, BP, Onstine, AH, Abernathy, CR, Pearton, SJ, Gotthold, D, Birkhahn, R, Peres, B, Fitch, RC, Moser, N, Gillespie, JK, Jessen, GH, Jenkins, TJ, Yannuzi, MJ, Via, GD & Crespo, A 2003, 'Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation', Solid-State Electronics, vol. 47, no. 10, pp. 1781-1786. https://doi.org/10.1016/S0038-1101(03)00138-2
Luo, B. ; Mehandru, R. ; Kim, Ji Hyun ; Ren, F. ; Gila, B. P. ; Onstine, A. H. ; Abernathy, C. R. ; Pearton, S. J. ; Gotthold, D. ; Birkhahn, R. ; Peres, B. ; Fitch, R. C. ; Moser, N. ; Gillespie, J. K. ; Jessen, G. H. ; Jenkins, T. J. ; Yannuzi, M. J. ; Via, G. D. ; Crespo, A. / Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation. In: Solid-State Electronics. 2003 ; Vol. 47, No. 10. pp. 1781-1786.
@article{5fa42275935047e0b67c21e69ab099b7,
title = "Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation",
abstract = "The dc and power characteristics of AlGaN/GaN MOS-HEMTs with Sc2O3 gate dielectrics were compared with that of conventional metal-gate HEMTs fabricated on the same material. The MOS-HEMT shows higher saturated drain-source current (∼0.75 A/mm) and significantly better power-added efficiency (PAE, 27{\%}) relative to the HEMT (∼0.6 A/mm and ∼5{\%}). The Sc2O3 also provides effective surface passivation, with higher drain current, lower leakage currents and higher three-terminal breakdown voltage in passivated devices relative to unpassivated devices. The PAE also increases (from ∼5{\%} to 12{\%}) on the surface passivated HEMTs, showing that Sc2O3 is an attractive option for reducing gate and surface leakage in AlGaN/GaN heterostructure transistors.",
keywords = "AlGaN/GaN, MOS-HEMT, Power-added efficiency, ScO",
author = "B. Luo and R. Mehandru and Kim, {Ji Hyun} and F. Ren and Gila, {B. P.} and Onstine, {A. H.} and Abernathy, {C. R.} and Pearton, {S. J.} and D. Gotthold and R. Birkhahn and B. Peres and Fitch, {R. C.} and N. Moser and Gillespie, {J. K.} and Jessen, {G. H.} and Jenkins, {T. J.} and Yannuzi, {M. J.} and Via, {G. D.} and A. Crespo",
year = "2003",
month = "10",
day = "1",
doi = "10.1016/S0038-1101(03)00138-2",
language = "English",
volume = "47",
pages = "1781--1786",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "10",

}

TY - JOUR

T1 - Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation

AU - Luo, B.

AU - Mehandru, R.

AU - Kim, Ji Hyun

AU - Ren, F.

AU - Gila, B. P.

AU - Onstine, A. H.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Gotthold, D.

AU - Birkhahn, R.

AU - Peres, B.

AU - Fitch, R. C.

AU - Moser, N.

AU - Gillespie, J. K.

AU - Jessen, G. H.

AU - Jenkins, T. J.

AU - Yannuzi, M. J.

AU - Via, G. D.

AU - Crespo, A.

PY - 2003/10/1

Y1 - 2003/10/1

N2 - The dc and power characteristics of AlGaN/GaN MOS-HEMTs with Sc2O3 gate dielectrics were compared with that of conventional metal-gate HEMTs fabricated on the same material. The MOS-HEMT shows higher saturated drain-source current (∼0.75 A/mm) and significantly better power-added efficiency (PAE, 27%) relative to the HEMT (∼0.6 A/mm and ∼5%). The Sc2O3 also provides effective surface passivation, with higher drain current, lower leakage currents and higher three-terminal breakdown voltage in passivated devices relative to unpassivated devices. The PAE also increases (from ∼5% to 12%) on the surface passivated HEMTs, showing that Sc2O3 is an attractive option for reducing gate and surface leakage in AlGaN/GaN heterostructure transistors.

AB - The dc and power characteristics of AlGaN/GaN MOS-HEMTs with Sc2O3 gate dielectrics were compared with that of conventional metal-gate HEMTs fabricated on the same material. The MOS-HEMT shows higher saturated drain-source current (∼0.75 A/mm) and significantly better power-added efficiency (PAE, 27%) relative to the HEMT (∼0.6 A/mm and ∼5%). The Sc2O3 also provides effective surface passivation, with higher drain current, lower leakage currents and higher three-terminal breakdown voltage in passivated devices relative to unpassivated devices. The PAE also increases (from ∼5% to 12%) on the surface passivated HEMTs, showing that Sc2O3 is an attractive option for reducing gate and surface leakage in AlGaN/GaN heterostructure transistors.

KW - AlGaN/GaN

KW - MOS-HEMT

KW - Power-added efficiency

KW - ScO

UR - http://www.scopus.com/inward/record.url?scp=0041592436&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0041592436&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(03)00138-2

DO - 10.1016/S0038-1101(03)00138-2

M3 - Article

VL - 47

SP - 1781

EP - 1786

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 10

ER -