Abstract
The dc and power characteristics of AlGaN/GaN MOS-HEMTs with Sc2O3 gate dielectrics were compared with that of conventional metal-gate HEMTs fabricated on the same material. The MOS-HEMT shows higher saturated drain-source current (∼0.75 A/mm) and significantly better power-added efficiency (PAE, 27%) relative to the HEMT (∼0.6 A/mm and ∼5%). The Sc2O3 also provides effective surface passivation, with higher drain current, lower leakage currents and higher three-terminal breakdown voltage in passivated devices relative to unpassivated devices. The PAE also increases (from ∼5% to 12%) on the surface passivated HEMTs, showing that Sc2O3 is an attractive option for reducing gate and surface leakage in AlGaN/GaN heterostructure transistors.
Original language | English |
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Pages (from-to) | 1781-1786 |
Number of pages | 6 |
Journal | Solid-State Electronics |
Volume | 47 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2003 Oct |
Keywords
- AlGaN/GaN
- MOS-HEMT
- Power-added efficiency
- ScO
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry