Improved Dc characteristics of AlGaN/GaN HEMTs with Ti/Al/Ti/Ni/Au electrode schemes

Young Su Lee; Hong Goo Choi; Cheol Koo Hahn; Su Jin Kim; Tae Geun Kim

doi:10.3938/jkps.56.1287

Improved Dc characteristics of AlGaN/GaN HEMTs with Ti/Al/Ti/Ni/Au electrode schemes

Young Su Lee, Hong Goo Choi, Cheol Koo Hahn, Su Jin Kim, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We report on the electrical properties of AlGaN/GaN high-electron-mobility transistors (HEMTs) fabricated with Ti/Al/Ti/Ni/Au multilayer ohmic electrodes on Si substrates. The specific contact resistance of the proposed electrode is as low as 8.8 × 10^-7 Ωcm², 5.7 times lower than that of the conventional Ti/Al/Ni/Au electrode. AlGaN/GaN HEMTs with Ti/Al/Ti/Ni/Au ohmic electrodes show a high extrinsic transconductance of 104 mS/mm and a maximum current density of 346 mA/mm, which values are increased by 15.5% and 54%, respectively, as compared to those observed from the AlGaN/GaN HEMTs with Ti/Al/Ni/Au ohmic electrodes.

Original language	English
Pages (from-to)	1287-1290
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	56
Issue number	41
DOIs	https://doi.org/10.3938/jkps.56.1287
Publication status	Published - 2010 Apr 15

Keywords

Dc performance
HEMTs
Improvement
Ohmic contact
Ti/Al/Ti/Ni/Au

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.3938/jkps.56.1287

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@article{20851bf262ac4b8c811d612544a97bac,

title = "Improved Dc characteristics of AlGaN/GaN HEMTs with Ti/Al/Ti/Ni/Au electrode schemes",

abstract = "We report on the electrical properties of AlGaN/GaN high-electron-mobility transistors (HEMTs) fabricated with Ti/Al/Ti/Ni/Au multilayer ohmic electrodes on Si substrates. The specific contact resistance of the proposed electrode is as low as 8.8 × 10-7 Ωcm2, 5.7 times lower than that of the conventional Ti/Al/Ni/Au electrode. AlGaN/GaN HEMTs with Ti/Al/Ti/Ni/Au ohmic electrodes show a high extrinsic transconductance of 104 mS/mm and a maximum current density of 346 mA/mm, which values are increased by 15.5% and 54%, respectively, as compared to those observed from the AlGaN/GaN HEMTs with Ti/Al/Ni/Au ohmic electrodes.",

keywords = "Dc performance, HEMTs, Improvement, Ohmic contact, Ti/Al/Ti/Ni/Au",

author = "Lee, {Young Su} and Choi, {Hong Goo} and Hahn, {Cheol Koo} and Kim, {Su Jin} and Kim, {Tae Geun}",

year = "2010",

month = apr,

day = "15",

doi = "10.3938/jkps.56.1287",

language = "English",

volume = "56",

pages = "1287--1290",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "41",

}

TY - JOUR

T1 - Improved Dc characteristics of AlGaN/GaN HEMTs with Ti/Al/Ti/Ni/Au electrode schemes

AU - Lee, Young Su

AU - Choi, Hong Goo

AU - Hahn, Cheol Koo

AU - Kim, Su Jin

AU - Kim, Tae Geun

PY - 2010/4/15

Y1 - 2010/4/15

N2 - We report on the electrical properties of AlGaN/GaN high-electron-mobility transistors (HEMTs) fabricated with Ti/Al/Ti/Ni/Au multilayer ohmic electrodes on Si substrates. The specific contact resistance of the proposed electrode is as low as 8.8 × 10-7 Ωcm2, 5.7 times lower than that of the conventional Ti/Al/Ni/Au electrode. AlGaN/GaN HEMTs with Ti/Al/Ti/Ni/Au ohmic electrodes show a high extrinsic transconductance of 104 mS/mm and a maximum current density of 346 mA/mm, which values are increased by 15.5% and 54%, respectively, as compared to those observed from the AlGaN/GaN HEMTs with Ti/Al/Ni/Au ohmic electrodes.

AB - We report on the electrical properties of AlGaN/GaN high-electron-mobility transistors (HEMTs) fabricated with Ti/Al/Ti/Ni/Au multilayer ohmic electrodes on Si substrates. The specific contact resistance of the proposed electrode is as low as 8.8 × 10-7 Ωcm2, 5.7 times lower than that of the conventional Ti/Al/Ni/Au electrode. AlGaN/GaN HEMTs with Ti/Al/Ti/Ni/Au ohmic electrodes show a high extrinsic transconductance of 104 mS/mm and a maximum current density of 346 mA/mm, which values are increased by 15.5% and 54%, respectively, as compared to those observed from the AlGaN/GaN HEMTs with Ti/Al/Ni/Au ohmic electrodes.

KW - Dc performance

KW - HEMTs

KW - Improvement

KW - Ohmic contact

KW - Ti/Al/Ti/Ni/Au

UR - http://www.scopus.com/inward/record.url?scp=77956388224&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77956388224&partnerID=8YFLogxK

U2 - 10.3938/jkps.56.1287

DO - 10.3938/jkps.56.1287

M3 - Article

AN - SCOPUS:77956388224

SN - 0374-4884

VL - 56

SP - 1287

EP - 1290

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 41

ER -

Improved Dc characteristics of AlGaN/GaN HEMTs with Ti/Al/Ti/Ni/Au electrode schemes

Abstract

Keywords

ASJC Scopus subject areas

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