Improved device performance in nonpolar a -plane GaN LEDs using a Ni/Al/Ni/Au n-type ohmic contact

Dong Ho Kim, Su Jin Kim, Seung Hwan Kim, Tak Jeong, Sung Min Hwang, Tae Geun Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The authors report upon the increased light-output power (Pout) via a reduction in the forward voltage (Vf) for nonpolar a -plane GaN LEDs using Ni/Al/Ni/Au n-type ohmic contacts. The specific contact resistivity of the Ni/Al/Ni/Au contact is found to be as low as 5.6 × 10-5 whereas that of a typical Ti/Al/Ni/Au contact is 6.8 × 10-4 Ω cm2, after annealing at 700 °C. The X-ray photoelectron spectroscopy results show that the upward surface band bending is less pronounced for the Ni/Al contact compared to the Ti/Al contact, leading to a decrease in the effective Schottky barrier height (SBH). The Vf of the nonpolar LEDs decreases by 10% and Pout increases by 15% when the Ni/Al/Ni/Au scheme is used instead of the typical Ti/Al/Ni/Au metal scheme.

Original languageEnglish
Pages (from-to)274-276
Number of pages3
JournalPhysica Status Solidi - Rapid Research Letters
Volume5
Issue number8
DOIs
Publication statusPublished - 2011 Aug 1

Fingerprint

Ohmic contacts
Light emitting diodes
electric contacts
light emitting diodes
X ray photoelectron spectroscopy
Metals
Annealing
Electric potential
photoelectron spectroscopy
electrical resistivity
annealing
output
electric potential
metals
x rays

Keywords

  • Current injection
  • LED
  • Ni-Al alloys
  • Nonpolar GaN

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Science(all)

Cite this

Improved device performance in nonpolar a -plane GaN LEDs using a Ni/Al/Ni/Au n-type ohmic contact. / Kim, Dong Ho; Kim, Su Jin; Kim, Seung Hwan; Jeong, Tak; Hwang, Sung Min; Kim, Tae Geun.

In: Physica Status Solidi - Rapid Research Letters, Vol. 5, No. 8, 01.08.2011, p. 274-276.

Research output: Contribution to journalArticle

Kim, Dong Ho ; Kim, Su Jin ; Kim, Seung Hwan ; Jeong, Tak ; Hwang, Sung Min ; Kim, Tae Geun. / Improved device performance in nonpolar a -plane GaN LEDs using a Ni/Al/Ni/Au n-type ohmic contact. In: Physica Status Solidi - Rapid Research Letters. 2011 ; Vol. 5, No. 8. pp. 274-276.
@article{332e62a6219c4c77a5428bb7bd9a1000,
title = "Improved device performance in nonpolar a -plane GaN LEDs using a Ni/Al/Ni/Au n-type ohmic contact",
abstract = "The authors report upon the increased light-output power (Pout) via a reduction in the forward voltage (Vf) for nonpolar a -plane GaN LEDs using Ni/Al/Ni/Au n-type ohmic contacts. The specific contact resistivity of the Ni/Al/Ni/Au contact is found to be as low as 5.6 × 10-5 whereas that of a typical Ti/Al/Ni/Au contact is 6.8 × 10-4 Ω cm2, after annealing at 700 °C. The X-ray photoelectron spectroscopy results show that the upward surface band bending is less pronounced for the Ni/Al contact compared to the Ti/Al contact, leading to a decrease in the effective Schottky barrier height (SBH). The Vf of the nonpolar LEDs decreases by 10{\%} and Pout increases by 15{\%} when the Ni/Al/Ni/Au scheme is used instead of the typical Ti/Al/Ni/Au metal scheme.",
keywords = "Current injection, LED, Ni-Al alloys, Nonpolar GaN",
author = "Kim, {Dong Ho} and Kim, {Su Jin} and Kim, {Seung Hwan} and Tak Jeong and Hwang, {Sung Min} and Kim, {Tae Geun}",
year = "2011",
month = "8",
day = "1",
doi = "10.1002/pssr.201105265",
language = "English",
volume = "5",
pages = "274--276",
journal = "Physica Status Solidi - Rapid Research Letters",
issn = "1862-6254",
publisher = "Wiley-VCH Verlag",
number = "8",

}

TY - JOUR

T1 - Improved device performance in nonpolar a -plane GaN LEDs using a Ni/Al/Ni/Au n-type ohmic contact

AU - Kim, Dong Ho

AU - Kim, Su Jin

AU - Kim, Seung Hwan

AU - Jeong, Tak

AU - Hwang, Sung Min

AU - Kim, Tae Geun

PY - 2011/8/1

Y1 - 2011/8/1

N2 - The authors report upon the increased light-output power (Pout) via a reduction in the forward voltage (Vf) for nonpolar a -plane GaN LEDs using Ni/Al/Ni/Au n-type ohmic contacts. The specific contact resistivity of the Ni/Al/Ni/Au contact is found to be as low as 5.6 × 10-5 whereas that of a typical Ti/Al/Ni/Au contact is 6.8 × 10-4 Ω cm2, after annealing at 700 °C. The X-ray photoelectron spectroscopy results show that the upward surface band bending is less pronounced for the Ni/Al contact compared to the Ti/Al contact, leading to a decrease in the effective Schottky barrier height (SBH). The Vf of the nonpolar LEDs decreases by 10% and Pout increases by 15% when the Ni/Al/Ni/Au scheme is used instead of the typical Ti/Al/Ni/Au metal scheme.

AB - The authors report upon the increased light-output power (Pout) via a reduction in the forward voltage (Vf) for nonpolar a -plane GaN LEDs using Ni/Al/Ni/Au n-type ohmic contacts. The specific contact resistivity of the Ni/Al/Ni/Au contact is found to be as low as 5.6 × 10-5 whereas that of a typical Ti/Al/Ni/Au contact is 6.8 × 10-4 Ω cm2, after annealing at 700 °C. The X-ray photoelectron spectroscopy results show that the upward surface band bending is less pronounced for the Ni/Al contact compared to the Ti/Al contact, leading to a decrease in the effective Schottky barrier height (SBH). The Vf of the nonpolar LEDs decreases by 10% and Pout increases by 15% when the Ni/Al/Ni/Au scheme is used instead of the typical Ti/Al/Ni/Au metal scheme.

KW - Current injection

KW - LED

KW - Ni-Al alloys

KW - Nonpolar GaN

UR - http://www.scopus.com/inward/record.url?scp=79961080800&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79961080800&partnerID=8YFLogxK

U2 - 10.1002/pssr.201105265

DO - 10.1002/pssr.201105265

M3 - Article

AN - SCOPUS:79961080800

VL - 5

SP - 274

EP - 276

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

SN - 1862-6254

IS - 8

ER -