Improved dielectric properties of ZrO2-doped Ba 0.6Sr0.4TiO3 thin films deposited by reactive magnetron co-sputtering

Kwang Hwan Cho, Chong Yun Kang, Seok Jin Yoon, Young Pak Lee

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1 Citation (Scopus)


ZrO2-doped (Ba0.6Sr0.4)TiO3 (BST) thin films with different ZrO2 contents were deposited on (100) LaAlO3 substrates by reactive magnetron co-sputtering. The dielectric properties of the ZrO2-doped BST thin films were measured using a symmetrical stripline resonator with shorted ends ranging from 1 to 3 GHz. We demonstrated that doping with ZrO2 significantly improved the dielectric properties of the BST thin films. ZrO2 doping successfully reduced the dielectric loss tangent (tan δ) from 9.2 × 10-3 (pure BST) to 2.9 × 10-3 (ZrO2 doped BST). The results of this study showed that the BST films remained tunable in a range of 29 ∼ 42.7 %, which is sufficient for tunable microwave device applications. Consequently, ZrO2 doping improved the figure of merit (K) for the films from K = 46.4 (pure BST) to K = 114.1 (ZrO2-doped BST).

Original languageEnglish
Pages (from-to)2378-2381
Number of pages4
JournalJournal of the Korean Physical Society
Issue number5 PART 1
Publication statusPublished - 2008 Nov
Externally publishedYes


  • Dielectric loss
  • Ferroelectric
  • Reactive co-sputtering
  • Tunable microwave device

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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