Improved dielectric properties of ZrO2-doped Ba 0.6Sr0.4TiO3 thin films deposited by reactive magnetron co-sputtering

Kwang Hwan Cho, Chong-Yun Kang, Seok Jin Yoon, YoungPak Lee

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

ZrO2-doped (Ba0.6Sr0.4)TiO3 (BST) thin films with different ZrO2 contents were deposited on (100) LaAlO3 substrates by reactive magnetron co-sputtering. The dielectric properties of the ZrO2-doped BST thin films were measured using a symmetrical stripline resonator with shorted ends ranging from 1 to 3 GHz. We demonstrated that doping with ZrO2 significantly improved the dielectric properties of the BST thin films. ZrO2 doping successfully reduced the dielectric loss tangent (tan δ) from 9.2 × 10-3 (pure BST) to 2.9 × 10-3 (ZrO2 doped BST). The results of this study showed that the BST films remained tunable in a range of 29 ∼ 42.7 %, which is sufficient for tunable microwave device applications. Consequently, ZrO2 doping improved the figure of merit (K) for the films from K = 46.4 (pure BST) to K = 114.1 (ZrO2-doped BST).

Original languageEnglish
Pages (from-to)2378-2381
Number of pages4
JournalJournal of the Korean Physical Society
Volume53
Issue number5 PART 1
Publication statusPublished - 2008 Nov 1

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dielectric properties
sputtering
thin films
tangents
dielectric loss
figure of merit
resonators
microwaves

Keywords

  • Dielectric loss
  • Ferroelectric
  • Reactive co-sputtering
  • Tunable microwave device

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Improved dielectric properties of ZrO2-doped Ba 0.6Sr0.4TiO3 thin films deposited by reactive magnetron co-sputtering. / Cho, Kwang Hwan; Kang, Chong-Yun; Yoon, Seok Jin; Lee, YoungPak.

In: Journal of the Korean Physical Society, Vol. 53, No. 5 PART 1, 01.11.2008, p. 2378-2381.

Research output: Contribution to journalArticle

Cho, Kwang Hwan ; Kang, Chong-Yun ; Yoon, Seok Jin ; Lee, YoungPak. / Improved dielectric properties of ZrO2-doped Ba 0.6Sr0.4TiO3 thin films deposited by reactive magnetron co-sputtering. In: Journal of the Korean Physical Society. 2008 ; Vol. 53, No. 5 PART 1. pp. 2378-2381.
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