Improved efficiency of InGaN/GaN-based multiple quantum well solar cells by reducing contact resistance

Jun Hyuk Song, Joon Ho Oh, Jae Phil Shim, Jung Hong Min, Dong Seon Lee, Tae Yeon Seong

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We report on the improvement in the performance of InGaN/GaN multi-quantum well-based solar cells by the introduction of a Cu-doped indium oxide (CIO) layer at the interface between indium tin oxide (ITO) p-electrode and p-GaN. The solar cell fabricated with the 3 nm-sample exhibits an external quantum efficiency of 29.8% (at a peak wavelength of 376 nm) higher than those (25.2%) of the cell with the ITO-only sample. The use of the 3-nm-thick CIO layer gives higher short circuit current density (0.72 mA/cm 2) and fill factor (78.85%) as compared to those (0.65 mA/cm 2 and 74.08%) of the ITO only sample. Measurements show that the conversion efficiency of the solar cells with the ITO-only sample and the 3 nm-sample is 1.12% and 1.30%, respectively. Based on their electrical and optical properties, the dependence of the CIO interlayer thickness on the efficiency of solar cells is discussed.

Original languageEnglish
Pages (from-to)299-305
Number of pages7
JournalSuperlattices and Microstructures
Volume52
Issue number2
DOIs
Publication statusPublished - 2012 Aug 1

Fingerprint

Contact resistance
contact resistance
indium oxides
Indium
Semiconductor quantum wells
Solar cells
solar cells
quantum wells
Tin oxides
tin oxides
Oxides
Quantum efficiency
Short circuit currents
Conversion efficiency
Electric properties
Current density
Optical properties
Wavelength
Electrodes
short circuit currents

Keywords

  • Cu-doped indium oxide
  • InGaN
  • Ohmic contact
  • Solar cell

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Materials Science(all)

Cite this

Improved efficiency of InGaN/GaN-based multiple quantum well solar cells by reducing contact resistance. / Song, Jun Hyuk; Oh, Joon Ho; Shim, Jae Phil; Min, Jung Hong; Lee, Dong Seon; Seong, Tae Yeon.

In: Superlattices and Microstructures, Vol. 52, No. 2, 01.08.2012, p. 299-305.

Research output: Contribution to journalArticle

Song, Jun Hyuk ; Oh, Joon Ho ; Shim, Jae Phil ; Min, Jung Hong ; Lee, Dong Seon ; Seong, Tae Yeon. / Improved efficiency of InGaN/GaN-based multiple quantum well solar cells by reducing contact resistance. In: Superlattices and Microstructures. 2012 ; Vol. 52, No. 2. pp. 299-305.
@article{6a2f48ed6d9d4852aad2f5d2b2f58977,
title = "Improved efficiency of InGaN/GaN-based multiple quantum well solar cells by reducing contact resistance",
abstract = "We report on the improvement in the performance of InGaN/GaN multi-quantum well-based solar cells by the introduction of a Cu-doped indium oxide (CIO) layer at the interface between indium tin oxide (ITO) p-electrode and p-GaN. The solar cell fabricated with the 3 nm-sample exhibits an external quantum efficiency of 29.8{\%} (at a peak wavelength of 376 nm) higher than those (25.2{\%}) of the cell with the ITO-only sample. The use of the 3-nm-thick CIO layer gives higher short circuit current density (0.72 mA/cm 2) and fill factor (78.85{\%}) as compared to those (0.65 mA/cm 2 and 74.08{\%}) of the ITO only sample. Measurements show that the conversion efficiency of the solar cells with the ITO-only sample and the 3 nm-sample is 1.12{\%} and 1.30{\%}, respectively. Based on their electrical and optical properties, the dependence of the CIO interlayer thickness on the efficiency of solar cells is discussed.",
keywords = "Cu-doped indium oxide, InGaN, Ohmic contact, Solar cell",
author = "Song, {Jun Hyuk} and Oh, {Joon Ho} and Shim, {Jae Phil} and Min, {Jung Hong} and Lee, {Dong Seon} and Seong, {Tae Yeon}",
year = "2012",
month = "8",
day = "1",
doi = "10.1016/j.spmi.2012.05.002",
language = "English",
volume = "52",
pages = "299--305",
journal = "Superlattices and Microstructures",
issn = "0749-6036",
publisher = "Academic Press Inc.",
number = "2",

}

TY - JOUR

T1 - Improved efficiency of InGaN/GaN-based multiple quantum well solar cells by reducing contact resistance

AU - Song, Jun Hyuk

AU - Oh, Joon Ho

AU - Shim, Jae Phil

AU - Min, Jung Hong

AU - Lee, Dong Seon

AU - Seong, Tae Yeon

PY - 2012/8/1

Y1 - 2012/8/1

N2 - We report on the improvement in the performance of InGaN/GaN multi-quantum well-based solar cells by the introduction of a Cu-doped indium oxide (CIO) layer at the interface between indium tin oxide (ITO) p-electrode and p-GaN. The solar cell fabricated with the 3 nm-sample exhibits an external quantum efficiency of 29.8% (at a peak wavelength of 376 nm) higher than those (25.2%) of the cell with the ITO-only sample. The use of the 3-nm-thick CIO layer gives higher short circuit current density (0.72 mA/cm 2) and fill factor (78.85%) as compared to those (0.65 mA/cm 2 and 74.08%) of the ITO only sample. Measurements show that the conversion efficiency of the solar cells with the ITO-only sample and the 3 nm-sample is 1.12% and 1.30%, respectively. Based on their electrical and optical properties, the dependence of the CIO interlayer thickness on the efficiency of solar cells is discussed.

AB - We report on the improvement in the performance of InGaN/GaN multi-quantum well-based solar cells by the introduction of a Cu-doped indium oxide (CIO) layer at the interface between indium tin oxide (ITO) p-electrode and p-GaN. The solar cell fabricated with the 3 nm-sample exhibits an external quantum efficiency of 29.8% (at a peak wavelength of 376 nm) higher than those (25.2%) of the cell with the ITO-only sample. The use of the 3-nm-thick CIO layer gives higher short circuit current density (0.72 mA/cm 2) and fill factor (78.85%) as compared to those (0.65 mA/cm 2 and 74.08%) of the ITO only sample. Measurements show that the conversion efficiency of the solar cells with the ITO-only sample and the 3 nm-sample is 1.12% and 1.30%, respectively. Based on their electrical and optical properties, the dependence of the CIO interlayer thickness on the efficiency of solar cells is discussed.

KW - Cu-doped indium oxide

KW - InGaN

KW - Ohmic contact

KW - Solar cell

UR - http://www.scopus.com/inward/record.url?scp=84861834558&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84861834558&partnerID=8YFLogxK

U2 - 10.1016/j.spmi.2012.05.002

DO - 10.1016/j.spmi.2012.05.002

M3 - Article

VL - 52

SP - 299

EP - 305

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

IS - 2

ER -