Improved electrical and thermal properties of Ag contacts for GaN-based flip-chip light-emitting diodes by using a NiZn alloy capping layer

Se Yeon Jung, Yoon Han Kim, Young Shik Kong, Tae Yeon Seong

Research output: Contribution to journalArticle

8 Citations (Scopus)


We investigate the effect of a 100 nm-thick NiZn alloy (10 wt% Zn) capping layer on the thermal and electrical properties of Ag reflectors (200 nm) for flip-chip light-emitting diodes (LEDs). It is shown that the introduction of the NiZn capping layer minimizes the formation of interfacial voids and surface agglomeration. Furthermore, LEDs fabricated with the NiZn-capping-layer-combined contacts produce better output power as compared to those with the Ag only reflectors. For example, the LEDs with the 400 {ring operator}C-annealed Ag/NiZn contacts give higher output power by ∼36% than those with the 400 {ring operator}C-annealed Ag only contacts. X-ray photoemission spectroscopy and Auger electron spectroscopy measurements are performed to understand the improved electrical properties of the LEDs fabricated with the NiZn-capping-layer-combined Ag contacts.

Original languageEnglish
Pages (from-to)578-584
Number of pages7
JournalSuperlattices and Microstructures
Issue number4
Publication statusPublished - 2009 Oct 1



  • Ag reflector
  • LED
  • NiZn capping layer
  • p-type Ohmic contact

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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