Abstract
To realize the high conversion efficiency potential of silicon heterojunction (SHJ) solar cells, it is crucial to minimize the series resistance by reducing the line resistivity and contact resistance of the Ag gridlines formed via low-temperature (<∼240 °C) curing. To reduce the resistivity and contact resistance of the screenprinted Ag gridlines on an indium tin oxide (ITO) layer, two strategies are utilized in this study: 1) the addition of Ag nanoparticles (NPs) into a low-temperature-curing polymer-based Ag paste for the resistivity and 2) the insertion of a thin Ag contact layer by inkjet printing between the screenprinted Ag gridline and the ITO layer for contact resistance. The effectiveness of these approaches was examined by curing the Ag gridlines at various temperatures in the range of 160–220 °C for 10 min. After curing at 200 °C, the low resistivity of 2.2 μΩ·cm and specific contact resistance of 0.55 mΩ·cm2 were obtained by adding 20 wt.% of Ag NPs and inserting the inkjet-printed Ag contact layer, respectively. Microstructural analyses were also performed to correlate the outstanding electrical properties of the Ag gridlines.
| Original language | English |
|---|---|
| Journal | IEEE Journal of Photovoltaics |
| DOIs | |
| Publication status | Accepted/In press - 2018 May 25 |
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Keywords
- Ag electrode
- Conductivity
- Contact resistance
- contact resistance
- Curing
- Electrical resistance measurement
- Indium tin oxide
- low-temperature-curing
- microstructure
- Photovoltaic cells
- screen printing
- Silicon
- silicon heterojunction (SHJ) solar cell
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
Improved Electrical Performance of Low-Temperature-Cured Silver Electrode for Silicon Heterojunction Solar Cells. / Li, Yuanming; Kim, Hee Soo; Yi, Junsin; Kim, Donghwan; Huh, Joo Youl.
In: IEEE Journal of Photovoltaics, 25.05.2018.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Improved Electrical Performance of Low-Temperature-Cured Silver Electrode for Silicon Heterojunction Solar Cells
AU - Li, Yuanming
AU - Kim, Hee Soo
AU - Yi, Junsin
AU - Kim, Donghwan
AU - Huh, Joo Youl
PY - 2018/5/25
Y1 - 2018/5/25
N2 - To realize the high conversion efficiency potential of silicon heterojunction (SHJ) solar cells, it is crucial to minimize the series resistance by reducing the line resistivity and contact resistance of the Ag gridlines formed via low-temperature (<∼240 °C) curing. To reduce the resistivity and contact resistance of the screenprinted Ag gridlines on an indium tin oxide (ITO) layer, two strategies are utilized in this study: 1) the addition of Ag nanoparticles (NPs) into a low-temperature-curing polymer-based Ag paste for the resistivity and 2) the insertion of a thin Ag contact layer by inkjet printing between the screenprinted Ag gridline and the ITO layer for contact resistance. The effectiveness of these approaches was examined by curing the Ag gridlines at various temperatures in the range of 160–220 °C for 10 min. After curing at 200 °C, the low resistivity of 2.2 μΩ·cm and specific contact resistance of 0.55 mΩ·cm2 were obtained by adding 20 wt.% of Ag NPs and inserting the inkjet-printed Ag contact layer, respectively. Microstructural analyses were also performed to correlate the outstanding electrical properties of the Ag gridlines.
AB - To realize the high conversion efficiency potential of silicon heterojunction (SHJ) solar cells, it is crucial to minimize the series resistance by reducing the line resistivity and contact resistance of the Ag gridlines formed via low-temperature (<∼240 °C) curing. To reduce the resistivity and contact resistance of the screenprinted Ag gridlines on an indium tin oxide (ITO) layer, two strategies are utilized in this study: 1) the addition of Ag nanoparticles (NPs) into a low-temperature-curing polymer-based Ag paste for the resistivity and 2) the insertion of a thin Ag contact layer by inkjet printing between the screenprinted Ag gridline and the ITO layer for contact resistance. The effectiveness of these approaches was examined by curing the Ag gridlines at various temperatures in the range of 160–220 °C for 10 min. After curing at 200 °C, the low resistivity of 2.2 μΩ·cm and specific contact resistance of 0.55 mΩ·cm2 were obtained by adding 20 wt.% of Ag NPs and inserting the inkjet-printed Ag contact layer, respectively. Microstructural analyses were also performed to correlate the outstanding electrical properties of the Ag gridlines.
KW - Ag electrode
KW - Conductivity
KW - Contact resistance
KW - contact resistance
KW - Curing
KW - Electrical resistance measurement
KW - Indium tin oxide
KW - low-temperature-curing
KW - microstructure
KW - Photovoltaic cells
KW - screen printing
KW - Silicon
KW - silicon heterojunction (SHJ) solar cell
UR - http://www.scopus.com/inward/record.url?scp=85047608364&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85047608364&partnerID=8YFLogxK
U2 - 10.1109/JPHOTOV.2018.2834955
DO - 10.1109/JPHOTOV.2018.2834955
M3 - Article
AN - SCOPUS:85047608364
JO - IEEE Journal of Photovoltaics
JF - IEEE Journal of Photovoltaics
SN - 2156-3381
ER -