Improved Electrical Performance of Low-Temperature-Cured Silver Electrode for Silicon Heterojunction Solar Cells

Yuanming Li, Hee Soo Kim, Junsin Yi, Donghwan Kim, Joo Youl Huh

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

To realize the high conversion efficiency potential of silicon heterojunction (SHJ) solar cells, it is crucial to minimize the series resistance by reducing the line resistivity and contact resistance of the Ag gridlines formed via low-temperature (<∼240 °C) curing. To reduce the resistivity and contact resistance of the screenprinted Ag gridlines on an indium tin oxide (ITO) layer, two strategies are utilized in this study: 1) the addition of Ag nanoparticles (NPs) into a low-temperature-curing polymer-based Ag paste for the resistivity and 2) the insertion of a thin Ag contact layer by inkjet printing between the screenprinted Ag gridline and the ITO layer for contact resistance. The effectiveness of these approaches was examined by curing the Ag gridlines at various temperatures in the range of 160–220 °C for 10 min. After curing at 200 °C, the low resistivity of 2.2 μΩ·cm and specific contact resistance of 0.55 mΩ·cm2 were obtained by adding 20 wt.% of Ag NPs and inserting the inkjet-printed Ag contact layer, respectively. Microstructural analyses were also performed to correlate the outstanding electrical properties of the Ag gridlines.

Original languageEnglish
JournalIEEE Journal of Photovoltaics
DOIs
Publication statusAccepted/In press - 2018 May 25

Fingerprint

Silicon
Contact resistance
curing
contact resistance
Silver
Curing
Heterojunctions
heterojunctions
Solar cells
solar cells
silver
Electrodes
electrical resistivity
electrodes
silicon
Tin oxides
indium oxides
Indium
tin oxides
Nanoparticles

Keywords

  • Ag electrode
  • Conductivity
  • Contact resistance
  • contact resistance
  • Curing
  • Electrical resistance measurement
  • Indium tin oxide
  • low-temperature-curing
  • microstructure
  • Photovoltaic cells
  • screen printing
  • Silicon
  • silicon heterojunction (SHJ) solar cell

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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title = "Improved Electrical Performance of Low-Temperature-Cured Silver Electrode for Silicon Heterojunction Solar Cells",
abstract = "To realize the high conversion efficiency potential of silicon heterojunction (SHJ) solar cells, it is crucial to minimize the series resistance by reducing the line resistivity and contact resistance of the Ag gridlines formed via low-temperature (<∼240 °C) curing. To reduce the resistivity and contact resistance of the screenprinted Ag gridlines on an indium tin oxide (ITO) layer, two strategies are utilized in this study: 1) the addition of Ag nanoparticles (NPs) into a low-temperature-curing polymer-based Ag paste for the resistivity and 2) the insertion of a thin Ag contact layer by inkjet printing between the screenprinted Ag gridline and the ITO layer for contact resistance. The effectiveness of these approaches was examined by curing the Ag gridlines at various temperatures in the range of 160–220 °C for 10 min. After curing at 200 °C, the low resistivity of 2.2 μΩ·cm and specific contact resistance of 0.55 mΩ·cm2 were obtained by adding 20 wt.{\%} of Ag NPs and inserting the inkjet-printed Ag contact layer, respectively. Microstructural analyses were also performed to correlate the outstanding electrical properties of the Ag gridlines.",
keywords = "Ag electrode, Conductivity, Contact resistance, contact resistance, Curing, Electrical resistance measurement, Indium tin oxide, low-temperature-curing, microstructure, Photovoltaic cells, screen printing, Silicon, silicon heterojunction (SHJ) solar cell",
author = "Yuanming Li and Kim, {Hee Soo} and Junsin Yi and Donghwan Kim and Huh, {Joo Youl}",
year = "2018",
month = "5",
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doi = "10.1109/JPHOTOV.2018.2834955",
language = "English",
journal = "IEEE Journal of Photovoltaics",
issn = "2156-3381",
publisher = "IEEE Electron Devices Society",

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T1 - Improved Electrical Performance of Low-Temperature-Cured Silver Electrode for Silicon Heterojunction Solar Cells

AU - Li, Yuanming

AU - Kim, Hee Soo

AU - Yi, Junsin

AU - Kim, Donghwan

AU - Huh, Joo Youl

PY - 2018/5/25

Y1 - 2018/5/25

N2 - To realize the high conversion efficiency potential of silicon heterojunction (SHJ) solar cells, it is crucial to minimize the series resistance by reducing the line resistivity and contact resistance of the Ag gridlines formed via low-temperature (<∼240 °C) curing. To reduce the resistivity and contact resistance of the screenprinted Ag gridlines on an indium tin oxide (ITO) layer, two strategies are utilized in this study: 1) the addition of Ag nanoparticles (NPs) into a low-temperature-curing polymer-based Ag paste for the resistivity and 2) the insertion of a thin Ag contact layer by inkjet printing between the screenprinted Ag gridline and the ITO layer for contact resistance. The effectiveness of these approaches was examined by curing the Ag gridlines at various temperatures in the range of 160–220 °C for 10 min. After curing at 200 °C, the low resistivity of 2.2 μΩ·cm and specific contact resistance of 0.55 mΩ·cm2 were obtained by adding 20 wt.% of Ag NPs and inserting the inkjet-printed Ag contact layer, respectively. Microstructural analyses were also performed to correlate the outstanding electrical properties of the Ag gridlines.

AB - To realize the high conversion efficiency potential of silicon heterojunction (SHJ) solar cells, it is crucial to minimize the series resistance by reducing the line resistivity and contact resistance of the Ag gridlines formed via low-temperature (<∼240 °C) curing. To reduce the resistivity and contact resistance of the screenprinted Ag gridlines on an indium tin oxide (ITO) layer, two strategies are utilized in this study: 1) the addition of Ag nanoparticles (NPs) into a low-temperature-curing polymer-based Ag paste for the resistivity and 2) the insertion of a thin Ag contact layer by inkjet printing between the screenprinted Ag gridline and the ITO layer for contact resistance. The effectiveness of these approaches was examined by curing the Ag gridlines at various temperatures in the range of 160–220 °C for 10 min. After curing at 200 °C, the low resistivity of 2.2 μΩ·cm and specific contact resistance of 0.55 mΩ·cm2 were obtained by adding 20 wt.% of Ag NPs and inserting the inkjet-printed Ag contact layer, respectively. Microstructural analyses were also performed to correlate the outstanding electrical properties of the Ag gridlines.

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KW - silicon heterojunction (SHJ) solar cell

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