Improved electrostatic discharge protection in GaN-based vertical light-emitting diodes by an internal diode

Hwan Hee Jeong, Sang Youl Lee, Jung Hyeok Bae, Kwang Ki Choi, June O. Song, Sung Jin Son, Yong Hyun Lee, Tae Yeon Seong

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We first fabricated GaN-based vertical light-emitting diodes (LEDs) with electrostatic discharge (ESD) protection internal diode. Despite the reduced emitting area due to the internal diode, the LEDs with the internal diode give a forward voltage of 3.42 V at 350 mA similar to that (3.40) of LEDs without the internal diode. It is shown that the output power of the LEDs with the internal diode is reduced by about 6% at 350 mA compared to reference LEDs without the internal diode. It is, however, further shown that the LEDs without the internal diode give a yield of 0% at the reverse voltages above 400 V, while the LEDs with the internal diode show a yield of ∼90% at reverse voltages of 2-4 kV.

Original languageEnglish
Article number5688221
Pages (from-to)423-425
Number of pages3
JournalIEEE Photonics Technology Letters
Volume23
Issue number7
DOIs
Publication statusPublished - 2011

Keywords

  • Electrostatic discharge (ESD) protection
  • gallium nitride
  • vertical light-emitting diodes (LEDs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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