Pt/GaN Schottky diodes fabricated on m -plane (N-polar) layers grown on sapphire exhibit much larger responses to dilute concentrations (4% in N2) of hydrogen at room temperature than comparable Ga-polar devices. This is consistent with previous density functional theory indicating a very high affinity of hydrogen for the N-face surface of GaN. The rectifying current-voltage characteristics of N-face diodes make a transition to more Ohmic-like behavior after hydrogen exposure, leading to very large (∼ 106) maximum percentage changes in current relative to Ga-face (∼10%) or AlGaN/GaN heterostructure diodes (∼170%). The strong affinity of the N face of GaN for hydrogen also leads to a slower recovery of these diodes when hydrogen is removed from the ambient.
|Journal||Applied Physics Letters|
|Publication status||Published - 2009|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)