Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes

Yu Lin Wang, F. Ren, U. Zhang, Q. Sun, C. D. Yerino, T. S. Ko, Y. S. Cho, In-Hwan Lee, J. Han, S. J. Pearton

Research output: Contribution to journalArticle

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Abstract

Pt/GaN Schottky diodes fabricated on m -plane (N-polar) layers grown on sapphire exhibit much larger responses to dilute concentrations (4% in N2) of hydrogen at room temperature than comparable Ga-polar devices. This is consistent with previous density functional theory indicating a very high affinity of hydrogen for the N-face surface of GaN. The rectifying current-voltage characteristics of N-face diodes make a transition to more Ohmic-like behavior after hydrogen exposure, leading to very large (∼ 106) maximum percentage changes in current relative to Ga-face (∼10%) or AlGaN/GaN heterostructure diodes (∼170%). The strong affinity of the N face of GaN for hydrogen also leads to a slower recovery of these diodes when hydrogen is removed from the ambient.

Original languageEnglish
Article number212108
JournalApplied Physics Letters
Volume94
Issue number21
DOIs
Publication statusPublished - 2009 Jun 11
Externally publishedYes

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Schottky diodes
hydrogen
diodes
affinity
sapphire
recovery
density functional theory
electric potential
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Wang, Y. L., Ren, F., Zhang, U., Sun, Q., Yerino, C. D., Ko, T. S., ... Pearton, S. J. (2009). Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes. Applied Physics Letters, 94(21), [212108]. https://doi.org/10.1063/1.3148369

Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes. / Wang, Yu Lin; Ren, F.; Zhang, U.; Sun, Q.; Yerino, C. D.; Ko, T. S.; Cho, Y. S.; Lee, In-Hwan; Han, J.; Pearton, S. J.

In: Applied Physics Letters, Vol. 94, No. 21, 212108, 11.06.2009.

Research output: Contribution to journalArticle

Wang, YL, Ren, F, Zhang, U, Sun, Q, Yerino, CD, Ko, TS, Cho, YS, Lee, I-H, Han, J & Pearton, SJ 2009, 'Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes', Applied Physics Letters, vol. 94, no. 21, 212108. https://doi.org/10.1063/1.3148369
Wang YL, Ren F, Zhang U, Sun Q, Yerino CD, Ko TS et al. Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes. Applied Physics Letters. 2009 Jun 11;94(21). 212108. https://doi.org/10.1063/1.3148369
Wang, Yu Lin ; Ren, F. ; Zhang, U. ; Sun, Q. ; Yerino, C. D. ; Ko, T. S. ; Cho, Y. S. ; Lee, In-Hwan ; Han, J. ; Pearton, S. J. / Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes. In: Applied Physics Letters. 2009 ; Vol. 94, No. 21.
@article{293866dd4b304f84a65152195acbbe30,
title = "Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes",
abstract = "Pt/GaN Schottky diodes fabricated on m -plane (N-polar) layers grown on sapphire exhibit much larger responses to dilute concentrations (4{\%} in N2) of hydrogen at room temperature than comparable Ga-polar devices. This is consistent with previous density functional theory indicating a very high affinity of hydrogen for the N-face surface of GaN. The rectifying current-voltage characteristics of N-face diodes make a transition to more Ohmic-like behavior after hydrogen exposure, leading to very large (∼ 106) maximum percentage changes in current relative to Ga-face (∼10{\%}) or AlGaN/GaN heterostructure diodes (∼170{\%}). The strong affinity of the N face of GaN for hydrogen also leads to a slower recovery of these diodes when hydrogen is removed from the ambient.",
author = "Wang, {Yu Lin} and F. Ren and U. Zhang and Q. Sun and Yerino, {C. D.} and Ko, {T. S.} and Cho, {Y. S.} and In-Hwan Lee and J. Han and Pearton, {S. J.}",
year = "2009",
month = "6",
day = "11",
doi = "10.1063/1.3148369",
language = "English",
volume = "94",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "21",

}

TY - JOUR

T1 - Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes

AU - Wang, Yu Lin

AU - Ren, F.

AU - Zhang, U.

AU - Sun, Q.

AU - Yerino, C. D.

AU - Ko, T. S.

AU - Cho, Y. S.

AU - Lee, In-Hwan

AU - Han, J.

AU - Pearton, S. J.

PY - 2009/6/11

Y1 - 2009/6/11

N2 - Pt/GaN Schottky diodes fabricated on m -plane (N-polar) layers grown on sapphire exhibit much larger responses to dilute concentrations (4% in N2) of hydrogen at room temperature than comparable Ga-polar devices. This is consistent with previous density functional theory indicating a very high affinity of hydrogen for the N-face surface of GaN. The rectifying current-voltage characteristics of N-face diodes make a transition to more Ohmic-like behavior after hydrogen exposure, leading to very large (∼ 106) maximum percentage changes in current relative to Ga-face (∼10%) or AlGaN/GaN heterostructure diodes (∼170%). The strong affinity of the N face of GaN for hydrogen also leads to a slower recovery of these diodes when hydrogen is removed from the ambient.

AB - Pt/GaN Schottky diodes fabricated on m -plane (N-polar) layers grown on sapphire exhibit much larger responses to dilute concentrations (4% in N2) of hydrogen at room temperature than comparable Ga-polar devices. This is consistent with previous density functional theory indicating a very high affinity of hydrogen for the N-face surface of GaN. The rectifying current-voltage characteristics of N-face diodes make a transition to more Ohmic-like behavior after hydrogen exposure, leading to very large (∼ 106) maximum percentage changes in current relative to Ga-face (∼10%) or AlGaN/GaN heterostructure diodes (∼170%). The strong affinity of the N face of GaN for hydrogen also leads to a slower recovery of these diodes when hydrogen is removed from the ambient.

UR - http://www.scopus.com/inward/record.url?scp=66549087252&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=66549087252&partnerID=8YFLogxK

U2 - 10.1063/1.3148369

DO - 10.1063/1.3148369

M3 - Article

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 21

M1 - 212108

ER -