Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes

Yu Lin Wang; F. Ren; U. Zhang; Q. Sun; C. D. Yerino; T. S. Ko; Y. S. Cho; I. H. Lee; J. Han; S. J. Pearton

doi:10.1063/1.3148369

Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes

Yu Lin Wang, F. Ren, U. Zhang, Q. Sun, C. D. Yerino, T. S. Ko, Y. S. Cho, I. H. Lee, J. Han, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

56 Citations (Scopus)

Abstract

Pt/GaN Schottky diodes fabricated on m -plane (N-polar) layers grown on sapphire exhibit much larger responses to dilute concentrations (4% in N2) of hydrogen at room temperature than comparable Ga-polar devices. This is consistent with previous density functional theory indicating a very high affinity of hydrogen for the N-face surface of GaN. The rectifying current-voltage characteristics of N-face diodes make a transition to more Ohmic-like behavior after hydrogen exposure, leading to very large (∼ 106) maximum percentage changes in current relative to Ga-face (∼10%) or AlGaN/GaN heterostructure diodes (∼170%). The strong affinity of the N face of GaN for hydrogen also leads to a slower recovery of these diodes when hydrogen is removed from the ambient.

Original language	English
Article number	212108
Journal	Applied Physics Letters
Volume	94
Issue number	21
DOIs	https://doi.org/10.1063/1.3148369
Publication status	Published - 2009
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3148369

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@article{293866dd4b304f84a65152195acbbe30,

title = "Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes",

abstract = "Pt/GaN Schottky diodes fabricated on m -plane (N-polar) layers grown on sapphire exhibit much larger responses to dilute concentrations (4% in N2) of hydrogen at room temperature than comparable Ga-polar devices. This is consistent with previous density functional theory indicating a very high affinity of hydrogen for the N-face surface of GaN. The rectifying current-voltage characteristics of N-face diodes make a transition to more Ohmic-like behavior after hydrogen exposure, leading to very large (∼ 106) maximum percentage changes in current relative to Ga-face (∼10%) or AlGaN/GaN heterostructure diodes (∼170%). The strong affinity of the N face of GaN for hydrogen also leads to a slower recovery of these diodes when hydrogen is removed from the ambient.",

author = "Wang, {Yu Lin} and F. Ren and U. Zhang and Q. Sun and Yerino, {C. D.} and Ko, {T. S.} and Cho, {Y. S.} and Lee, {I. H.} and J. Han and Pearton, {S. J.}",

note = "Funding Information: The work at UF was partially supported by ONR Grant No. N000140710982 monitored by Igor Vodyanoy, by NSF DMR Grant No. 0400416, and the State of Florida, Center of Excellence in Nano-Bio Sensors.",

year = "2009",

doi = "10.1063/1.3148369",

language = "English",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "21",

}

TY - JOUR

T1 - Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes

AU - Wang, Yu Lin

AU - Ren, F.

AU - Zhang, U.

AU - Sun, Q.

AU - Yerino, C. D.

AU - Ko, T. S.

AU - Cho, Y. S.

AU - Lee, I. H.

AU - Han, J.

AU - Pearton, S. J.

N1 - Funding Information: The work at UF was partially supported by ONR Grant No. N000140710982 monitored by Igor Vodyanoy, by NSF DMR Grant No. 0400416, and the State of Florida, Center of Excellence in Nano-Bio Sensors.

PY - 2009

Y1 - 2009

N2 - Pt/GaN Schottky diodes fabricated on m -plane (N-polar) layers grown on sapphire exhibit much larger responses to dilute concentrations (4% in N2) of hydrogen at room temperature than comparable Ga-polar devices. This is consistent with previous density functional theory indicating a very high affinity of hydrogen for the N-face surface of GaN. The rectifying current-voltage characteristics of N-face diodes make a transition to more Ohmic-like behavior after hydrogen exposure, leading to very large (∼ 106) maximum percentage changes in current relative to Ga-face (∼10%) or AlGaN/GaN heterostructure diodes (∼170%). The strong affinity of the N face of GaN for hydrogen also leads to a slower recovery of these diodes when hydrogen is removed from the ambient.

AB - Pt/GaN Schottky diodes fabricated on m -plane (N-polar) layers grown on sapphire exhibit much larger responses to dilute concentrations (4% in N2) of hydrogen at room temperature than comparable Ga-polar devices. This is consistent with previous density functional theory indicating a very high affinity of hydrogen for the N-face surface of GaN. The rectifying current-voltage characteristics of N-face diodes make a transition to more Ohmic-like behavior after hydrogen exposure, leading to very large (∼ 106) maximum percentage changes in current relative to Ga-face (∼10%) or AlGaN/GaN heterostructure diodes (∼170%). The strong affinity of the N face of GaN for hydrogen also leads to a slower recovery of these diodes when hydrogen is removed from the ambient.

UR - http://www.scopus.com/inward/record.url?scp=66549087252&partnerID=8YFLogxK

U2 - 10.1063/1.3148369

DO - 10.1063/1.3148369

M3 - Article

AN - SCOPUS:66549087252

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 212108

ER -

Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes

Abstract

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