Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes

Yu Lin Wang, F. Ren, U. Zhang, Q. Sun, C. D. Yerino, T. S. Ko, Y. S. Cho, I. H. Lee, J. Han, S. J. Pearton

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Abstract

Pt/GaN Schottky diodes fabricated on m -plane (N-polar) layers grown on sapphire exhibit much larger responses to dilute concentrations (4% in N2) of hydrogen at room temperature than comparable Ga-polar devices. This is consistent with previous density functional theory indicating a very high affinity of hydrogen for the N-face surface of GaN. The rectifying current-voltage characteristics of N-face diodes make a transition to more Ohmic-like behavior after hydrogen exposure, leading to very large (∼ 106) maximum percentage changes in current relative to Ga-face (∼10%) or AlGaN/GaN heterostructure diodes (∼170%). The strong affinity of the N face of GaN for hydrogen also leads to a slower recovery of these diodes when hydrogen is removed from the ambient.

Original languageEnglish
Article number212108
JournalApplied Physics Letters
Volume94
Issue number21
DOIs
Publication statusPublished - 2009 Jun 11
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Wang, Y. L., Ren, F., Zhang, U., Sun, Q., Yerino, C. D., Ko, T. S., Cho, Y. S., Lee, I. H., Han, J., & Pearton, S. J. (2009). Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes. Applied Physics Letters, 94(21), [212108]. https://doi.org/10.1063/1.3148369